JPS56140593A - Sense amplifier - Google Patents

Sense amplifier

Info

Publication number
JPS56140593A
JPS56140593A JP4386980A JP4386980A JPS56140593A JP S56140593 A JPS56140593 A JP S56140593A JP 4386980 A JP4386980 A JP 4386980A JP 4386980 A JP4386980 A JP 4386980A JP S56140593 A JPS56140593 A JP S56140593A
Authority
JP
Japan
Prior art keywords
voltage
trs
voltages
unbalance
threshold voltages
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4386980A
Other languages
Japanese (ja)
Other versions
JPS6019598B2 (en
Inventor
Kunio Nishiwaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55043869A priority Critical patent/JPS6019598B2/en
Publication of JPS56140593A publication Critical patent/JPS56140593A/en
Publication of JPS6019598B2 publication Critical patent/JPS6019598B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To prevent malfunction and to obtain high sensitivity by realizing the circuit constitution which operates without any influence of the unbalance between the threshold voltages of a couple of MOS transistors (TR) performing sense amplification. CONSTITUTION:Sources of driving TRs Q56 and Q57 coupling with each other are provided separately. Then, drains and gates of TRs Q56 and Q57 are charged up to voltage ''1'', and sources up to voltages lower than voltage ''1'' by threshold voltages of TRs Q56 and Q57 respectively. Next, gate voltages of TRs Q56 and Q57 are set to voltages to be compared and source voltages of TRs Q56 and Q57 are varied gradually toward to voltage ''0'' at nearly equal voltage variation rates to sense the voltage differece of the voltage to be compared, thereby discharging only TR held at a lower voltage to voltage ''0''. Thus, the operation is carried out without any influence of the unbalance between threshold voltages of TRs Q56 and Q57, so that malfunction due to the voltage unbalance can be prevented.
JP55043869A 1980-04-03 1980-04-03 sense amplifier Expired JPS6019598B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55043869A JPS6019598B2 (en) 1980-04-03 1980-04-03 sense amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55043869A JPS6019598B2 (en) 1980-04-03 1980-04-03 sense amplifier

Publications (2)

Publication Number Publication Date
JPS56140593A true JPS56140593A (en) 1981-11-02
JPS6019598B2 JPS6019598B2 (en) 1985-05-16

Family

ID=12675698

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55043869A Expired JPS6019598B2 (en) 1980-04-03 1980-04-03 sense amplifier

Country Status (1)

Country Link
JP (1) JPS6019598B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59167897A (en) * 1983-03-15 1984-09-21 Toshiba Corp Sense amplifier circuit
US4644196A (en) * 1985-01-28 1987-02-17 Motorola, Inc. Tri-state differential amplifier

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59167897A (en) * 1983-03-15 1984-09-21 Toshiba Corp Sense amplifier circuit
US4644196A (en) * 1985-01-28 1987-02-17 Motorola, Inc. Tri-state differential amplifier

Also Published As

Publication number Publication date
JPS6019598B2 (en) 1985-05-16

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