JPS5760589A - Memory circuit - Google Patents

Memory circuit

Info

Publication number
JPS5760589A
JPS5760589A JP55136273A JP13627380A JPS5760589A JP S5760589 A JPS5760589 A JP S5760589A JP 55136273 A JP55136273 A JP 55136273A JP 13627380 A JP13627380 A JP 13627380A JP S5760589 A JPS5760589 A JP S5760589A
Authority
JP
Japan
Prior art keywords
sense amplifier
potential
digit line
sense
sensitivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55136273A
Other languages
Japanese (ja)
Inventor
Shoji Kaneko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55136273A priority Critical patent/JPS5760589A/en
Publication of JPS5760589A publication Critical patent/JPS5760589A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To increase the sensitivity of a sense amplifier, by setting a prescribed level of transmission gate voltage of an MISFET type RAM for the power source voltage and separating the sense amplifier from a digit line during the action of the sense amplifier. CONSTITUTION:The sensing action is started after the cell signals are transmitted to sense nodes N11 and N21, and a signal phiS11 is raised up to a high level of potential. Thus a node N51 becomes higher than the potential of power source VDD via a capacitor 51, and accordingly the gate of a transistor T14 is controlled. As a result, the potential of a node N41 is lowered at or less than the supply VDD to turn off transmission gates T4 and T5. Thus the nodes N11 and N21 are interrupted from a digit line DD. Accordingly the sense amplification is carried out with no noise caused from the digit line to increase the sensitivity of a sense amplifier.
JP55136273A 1980-09-30 1980-09-30 Memory circuit Pending JPS5760589A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55136273A JPS5760589A (en) 1980-09-30 1980-09-30 Memory circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55136273A JPS5760589A (en) 1980-09-30 1980-09-30 Memory circuit

Publications (1)

Publication Number Publication Date
JPS5760589A true JPS5760589A (en) 1982-04-12

Family

ID=15171331

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55136273A Pending JPS5760589A (en) 1980-09-30 1980-09-30 Memory circuit

Country Status (1)

Country Link
JP (1) JPS5760589A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61273792A (en) * 1985-05-28 1986-12-04 Toshiba Corp Semiconductor memory
JPH03129259U (en) * 1990-04-10 1991-12-25
EP0570708A2 (en) * 1992-05-22 1993-11-24 International Business Machines Corporation Open bit line memory devices and operational method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5399832A (en) * 1977-02-14 1978-08-31 Nec Corp Sense amplifier

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5399832A (en) * 1977-02-14 1978-08-31 Nec Corp Sense amplifier

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61273792A (en) * 1985-05-28 1986-12-04 Toshiba Corp Semiconductor memory
JPH03129259U (en) * 1990-04-10 1991-12-25
EP0570708A2 (en) * 1992-05-22 1993-11-24 International Business Machines Corporation Open bit line memory devices and operational method
EP0570708A3 (en) * 1992-05-22 1994-06-01 Ibm Open bit line memory devices and operational method

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