JPS57130287A - Memory circuit - Google Patents
Memory circuitInfo
- Publication number
- JPS57130287A JPS57130287A JP56016072A JP1607281A JPS57130287A JP S57130287 A JPS57130287 A JP S57130287A JP 56016072 A JP56016072 A JP 56016072A JP 1607281 A JP1607281 A JP 1607281A JP S57130287 A JPS57130287 A JP S57130287A
- Authority
- JP
- Japan
- Prior art keywords
- sense amplifiers
- trs
- activated
- word line
- controlled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
Abstract
PURPOSE:To improve sense amplifier sensitivity by reducing noises, by activating adjacent sense amplifiers at different timing in one refreshment cycle. CONSTITUTION:To sense amplifiers S. A., (n) digit lines Di (i=0-n-1) are connected and the signal transfer of memory cells Cs connected to the digit lines Di is controlled by transistors (TR)Qw1 and Qw1. The signal transfer of a dummy cell Cs is controlled by TRs Q1 and QR2. Alternate common sources of the sense amplifiers are connected and TRs QS1 and QS1 hold the respective common source at a low potential. In one refreshment cycle, signals phiW1, phiR1 and phiS1, or phiW2, phiR2 and phiS2 for word line selection, dummy word line selection and sense amplifier activation are activated and alternate sense amplifiers only are activated at the same time.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56016072A JPS57130287A (en) | 1981-02-05 | 1981-02-05 | Memory circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56016072A JPS57130287A (en) | 1981-02-05 | 1981-02-05 | Memory circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57130287A true JPS57130287A (en) | 1982-08-12 |
JPH0157434B2 JPH0157434B2 (en) | 1989-12-05 |
Family
ID=11906358
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56016072A Granted JPS57130287A (en) | 1981-02-05 | 1981-02-05 | Memory circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57130287A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6366787A (en) * | 1986-09-08 | 1988-03-25 | Oki Electric Ind Co Ltd | Semiconductor memory circuit |
JPH01130392A (en) * | 1987-11-17 | 1989-05-23 | Mitsubishi Electric Corp | Dynamic random access memory device |
JPH0291884A (en) * | 1988-09-28 | 1990-03-30 | Toshiba Corp | Semiconductor storage device |
JPH02244485A (en) * | 1989-03-16 | 1990-09-28 | Mitsubishi Electric Corp | Dynamic type semiconductor storage device |
EP1045397A2 (en) * | 1999-04-07 | 2000-10-18 | STMicroelectronics, Inc. | Dynamic random access memory circuit having a testing system and method to determine the sensitivity of a sense amplifier |
-
1981
- 1981-02-05 JP JP56016072A patent/JPS57130287A/en active Granted
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6366787A (en) * | 1986-09-08 | 1988-03-25 | Oki Electric Ind Co Ltd | Semiconductor memory circuit |
JPH01130392A (en) * | 1987-11-17 | 1989-05-23 | Mitsubishi Electric Corp | Dynamic random access memory device |
JPH0291884A (en) * | 1988-09-28 | 1990-03-30 | Toshiba Corp | Semiconductor storage device |
JPH02244485A (en) * | 1989-03-16 | 1990-09-28 | Mitsubishi Electric Corp | Dynamic type semiconductor storage device |
EP1045397A2 (en) * | 1999-04-07 | 2000-10-18 | STMicroelectronics, Inc. | Dynamic random access memory circuit having a testing system and method to determine the sensitivity of a sense amplifier |
EP1045397A3 (en) * | 1999-04-07 | 2000-12-06 | STMicroelectronics, Inc. | Dynamic random access memory circuit having a testing system and method to determine the sensitivity of a sense amplifier |
Also Published As
Publication number | Publication date |
---|---|
JPH0157434B2 (en) | 1989-12-05 |
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