JPS57130287A - Memory circuit - Google Patents

Memory circuit

Info

Publication number
JPS57130287A
JPS57130287A JP56016072A JP1607281A JPS57130287A JP S57130287 A JPS57130287 A JP S57130287A JP 56016072 A JP56016072 A JP 56016072A JP 1607281 A JP1607281 A JP 1607281A JP S57130287 A JPS57130287 A JP S57130287A
Authority
JP
Japan
Prior art keywords
sense amplifiers
trs
activated
word line
controlled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56016072A
Other languages
Japanese (ja)
Other versions
JPH0157434B2 (en
Inventor
Shoji Kaneko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56016072A priority Critical patent/JPS57130287A/en
Publication of JPS57130287A publication Critical patent/JPS57130287A/en
Publication of JPH0157434B2 publication Critical patent/JPH0157434B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To improve sense amplifier sensitivity by reducing noises, by activating adjacent sense amplifiers at different timing in one refreshment cycle. CONSTITUTION:To sense amplifiers S. A., (n) digit lines Di (i=0-n-1) are connected and the signal transfer of memory cells Cs connected to the digit lines Di is controlled by transistors (TR)Qw1 and Qw1. The signal transfer of a dummy cell Cs is controlled by TRs Q1 and QR2. Alternate common sources of the sense amplifiers are connected and TRs QS1 and QS1 hold the respective common source at a low potential. In one refreshment cycle, signals phiW1, phiR1 and phiS1, or phiW2, phiR2 and phiS2 for word line selection, dummy word line selection and sense amplifier activation are activated and alternate sense amplifiers only are activated at the same time.
JP56016072A 1981-02-05 1981-02-05 Memory circuit Granted JPS57130287A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56016072A JPS57130287A (en) 1981-02-05 1981-02-05 Memory circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56016072A JPS57130287A (en) 1981-02-05 1981-02-05 Memory circuit

Publications (2)

Publication Number Publication Date
JPS57130287A true JPS57130287A (en) 1982-08-12
JPH0157434B2 JPH0157434B2 (en) 1989-12-05

Family

ID=11906358

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56016072A Granted JPS57130287A (en) 1981-02-05 1981-02-05 Memory circuit

Country Status (1)

Country Link
JP (1) JPS57130287A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6366787A (en) * 1986-09-08 1988-03-25 Oki Electric Ind Co Ltd Semiconductor memory circuit
JPH01130392A (en) * 1987-11-17 1989-05-23 Mitsubishi Electric Corp Dynamic random access memory device
JPH0291884A (en) * 1988-09-28 1990-03-30 Toshiba Corp Semiconductor storage device
JPH02244485A (en) * 1989-03-16 1990-09-28 Mitsubishi Electric Corp Dynamic type semiconductor storage device
EP1045397A2 (en) * 1999-04-07 2000-10-18 STMicroelectronics, Inc. Dynamic random access memory circuit having a testing system and method to determine the sensitivity of a sense amplifier

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6366787A (en) * 1986-09-08 1988-03-25 Oki Electric Ind Co Ltd Semiconductor memory circuit
JPH01130392A (en) * 1987-11-17 1989-05-23 Mitsubishi Electric Corp Dynamic random access memory device
JPH0291884A (en) * 1988-09-28 1990-03-30 Toshiba Corp Semiconductor storage device
JPH02244485A (en) * 1989-03-16 1990-09-28 Mitsubishi Electric Corp Dynamic type semiconductor storage device
EP1045397A2 (en) * 1999-04-07 2000-10-18 STMicroelectronics, Inc. Dynamic random access memory circuit having a testing system and method to determine the sensitivity of a sense amplifier
EP1045397A3 (en) * 1999-04-07 2000-12-06 STMicroelectronics, Inc. Dynamic random access memory circuit having a testing system and method to determine the sensitivity of a sense amplifier

Also Published As

Publication number Publication date
JPH0157434B2 (en) 1989-12-05

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