JPS5746390A - Dummy cell circuit - Google Patents

Dummy cell circuit

Info

Publication number
JPS5746390A
JPS5746390A JP55122648A JP12264880A JPS5746390A JP S5746390 A JPS5746390 A JP S5746390A JP 55122648 A JP55122648 A JP 55122648A JP 12264880 A JP12264880 A JP 12264880A JP S5746390 A JPS5746390 A JP S5746390A
Authority
JP
Japan
Prior art keywords
dummy cell
line
word line
capacitor
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55122648A
Other languages
Japanese (ja)
Inventor
Toru Furuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55122648A priority Critical patent/JPS5746390A/en
Publication of JPS5746390A publication Critical patent/JPS5746390A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

Abstract

PURPOSE:To make manufacturing of a high grade integrated circuit easy, by supplying the prescribed potential to be written into a dummy cell in the stand-by mode through an optional word line within a memory. CONSTITUTION:The source, the drain, and the gate of a dummy cell reading transistor (TR) 1 are connected to a bit line 6, a capacitor 3, and a word line 7 of a dummy cell, respectively. Then the source of a writing TR2 are connected to a point 4 of the connection between the TR1 and the capacitor 3, and the drain is connected to an optional word line, e.g., the line 7 corresponding to said dummy cell, and the gate is connected to a write signal line 8 respectively.
JP55122648A 1980-09-04 1980-09-04 Dummy cell circuit Pending JPS5746390A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55122648A JPS5746390A (en) 1980-09-04 1980-09-04 Dummy cell circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55122648A JPS5746390A (en) 1980-09-04 1980-09-04 Dummy cell circuit

Publications (1)

Publication Number Publication Date
JPS5746390A true JPS5746390A (en) 1982-03-16

Family

ID=14841164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55122648A Pending JPS5746390A (en) 1980-09-04 1980-09-04 Dummy cell circuit

Country Status (1)

Country Link
JP (1) JPS5746390A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6042638A (en) * 1996-05-09 2000-03-28 Glynson Industries, Inc. Biocidal coating composition
US6231650B1 (en) 1999-09-17 2001-05-15 Alistagen Corporation Biocidal coating composition
US6280509B1 (en) 1996-05-09 2001-08-28 Alistagen Corporation Biocidal coating compositions and method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6042638A (en) * 1996-05-09 2000-03-28 Glynson Industries, Inc. Biocidal coating composition
US6280509B1 (en) 1996-05-09 2001-08-28 Alistagen Corporation Biocidal coating compositions and method
US6231650B1 (en) 1999-09-17 2001-05-15 Alistagen Corporation Biocidal coating composition

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