JPS5782286A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS5782286A
JPS5782286A JP55156870A JP15687080A JPS5782286A JP S5782286 A JPS5782286 A JP S5782286A JP 55156870 A JP55156870 A JP 55156870A JP 15687080 A JP15687080 A JP 15687080A JP S5782286 A JPS5782286 A JP S5782286A
Authority
JP
Japan
Prior art keywords
type bit
memory cell
bit lines
folding type
sense
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55156870A
Other languages
Japanese (ja)
Inventor
Koichiro Masuko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55156870A priority Critical patent/JPS5782286A/en
Publication of JPS5782286A publication Critical patent/JPS5782286A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To reduce the length of a folding type bit line and to decrease the number of sense amplifiers, by commonly using a sense amplifier of dynamic memory of one transistor (TR) memory cell type at 2 pairs of folding type bit lines. CONSTITUTION:TRs 1, 2 forming a flip-flop and a clock O3 form a sense amplifying circuit, which is commonly possessed with two pairs of folding type bit lines 3R, 4R, 3L, 4L. A memory cell MC and a dummy memory cell DC are connected to the folded type bit lines. Either one only of suffixes R and L is selected, one word lines WL1, WLN at selected side and dummy word lines DWL1, DWLN are increased for the potential, and data are read out from the sense amplifying circuit. Since other line is kept at low level, without any effect to readout operation.
JP55156870A 1980-11-06 1980-11-06 Semiconductor storage device Pending JPS5782286A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55156870A JPS5782286A (en) 1980-11-06 1980-11-06 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55156870A JPS5782286A (en) 1980-11-06 1980-11-06 Semiconductor storage device

Publications (1)

Publication Number Publication Date
JPS5782286A true JPS5782286A (en) 1982-05-22

Family

ID=15637184

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55156870A Pending JPS5782286A (en) 1980-11-06 1980-11-06 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS5782286A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59139196A (en) * 1982-12-01 1984-08-09 テキサス・インスツルメンツ・インコ−ポレイテツド Semiconductor memory device
JPS6192495A (en) * 1984-10-11 1986-05-10 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory device
JPS632197A (en) * 1986-06-20 1988-01-07 Mitsubishi Electric Corp Semiconductor storage device
JPS6363196A (en) * 1986-09-02 1988-03-19 Fujitsu Ltd Semiconductor storage device
JPS63146293A (en) * 1986-12-09 1988-06-18 Toshiba Corp Semiconductor memory device
JPH05298886A (en) * 1992-04-17 1993-11-12 Matsushita Electric Ind Co Ltd Differential transmitting circuit

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59139196A (en) * 1982-12-01 1984-08-09 テキサス・インスツルメンツ・インコ−ポレイテツド Semiconductor memory device
JPH0520833B2 (en) * 1982-12-01 1993-03-22 Texas Instruments Inc
JPS6192495A (en) * 1984-10-11 1986-05-10 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory device
JPS632197A (en) * 1986-06-20 1988-01-07 Mitsubishi Electric Corp Semiconductor storage device
JPS6363196A (en) * 1986-09-02 1988-03-19 Fujitsu Ltd Semiconductor storage device
JPS63146293A (en) * 1986-12-09 1988-06-18 Toshiba Corp Semiconductor memory device
JPH05298886A (en) * 1992-04-17 1993-11-12 Matsushita Electric Ind Co Ltd Differential transmitting circuit

Similar Documents

Publication Publication Date Title
JPS6466899A (en) Memory cell
JPS5619586A (en) Semiconductor memory unit
MY102152A (en) Semiconductor memory device
EP0811979A3 (en) A semiconductor memory device with a large storage capacity memory and a fast speed memory
JPS5342633A (en) Voltage sense circuit of semiconductor memory device
KR900015154A (en) Di-RAM integrated semiconductor memory and its test method
EP0118878A3 (en) Semiconductor memory device
EP0107387A3 (en) Semiconductor memory device
JPS5782286A (en) Semiconductor storage device
JPS6280897A (en) Semiconductor storage device
JPS56130888A (en) Semiconductor memory device
JPS5785255A (en) Memory storage for integrated circuit
JPS57109190A (en) Semiconductor storage device and its manufacture
KR840006098A (en) Dual port type semiconductor memory
JPS52144240A (en) Amplifier circuit for reading dynamic mos memory
JPS5625292A (en) Memory circuit
KR880013070A (en) Digital Signal Processing Equipment
JPS5693178A (en) Semiconductor memory device
JPS55157194A (en) Semiconductor memory device
JPS55153194A (en) Integrated semiconductor memory unit
KR950006856A (en) Column Decoder Enable Signal Generation Circuit of Semiconductor Device
JPS57109184A (en) Dynamic memory device
JPS5677997A (en) Semiconductor memory device
JPS54100232A (en) Integrated memory
JPH0510756B2 (en)