FR2299700A1 - Memoire morte programmable effacable - Google Patents

Memoire morte programmable effacable

Info

Publication number
FR2299700A1
FR2299700A1 FR7539818A FR7539818A FR2299700A1 FR 2299700 A1 FR2299700 A1 FR 2299700A1 FR 7539818 A FR7539818 A FR 7539818A FR 7539818 A FR7539818 A FR 7539818A FR 2299700 A1 FR2299700 A1 FR 2299700A1
Authority
FR
France
Prior art keywords
deadly
erasable memory
programmable erasable
programmable
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR7539818A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of FR2299700A1 publication Critical patent/FR2299700A1/fr
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H03K19/01714—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by bootstrapping, i.e. by positive feed-back
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09441—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type
    • H03K19/09443—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type using a combination of enhancement and depletion transistors
    • H03K19/09445—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type using a combination of enhancement and depletion transistors with active depletion transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/003—Changing the DC level

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Facsimile Heads (AREA)
  • Electronic Switches (AREA)
FR7539818A 1975-02-03 1975-12-26 Memoire morte programmable effacable Pending FR2299700A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/546,546 US3938108A (en) 1975-02-03 1975-02-03 Erasable programmable read-only memory

Publications (1)

Publication Number Publication Date
FR2299700A1 true FR2299700A1 (fr) 1976-08-27

Family

ID=24180904

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7539818A Pending FR2299700A1 (fr) 1975-02-03 1975-12-26 Memoire morte programmable effacable

Country Status (5)

Country Link
US (1) US3938108A (fr)
JP (1) JPS568439B2 (fr)
DE (1) DE2601622C3 (fr)
FR (1) FR2299700A1 (fr)
GB (3) GB1523744A (fr)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2639555C2 (de) * 1975-09-04 1985-07-04 Plessey Overseas Ltd., Ilford, Essex Elektrische integrierte Schaltung
JPS592996B2 (ja) * 1976-05-24 1984-01-21 株式会社日立製作所 半導体記憶回路
US4094012A (en) * 1976-10-01 1978-06-06 Intel Corporation Electrically programmable MOS read-only memory with isolated decoders
US4161039A (en) * 1976-12-15 1979-07-10 Siemens Aktiengesellschaft N-Channel storage FET
US4093875A (en) * 1977-01-31 1978-06-06 International Business Machines Corporation Field effect transistor (FET) circuit utilizing substrate potential for turning off depletion mode devices
DE2706155A1 (de) * 1977-02-14 1978-08-17 Siemens Ag In integrierter technik hergestellter elektronischer speicher
JPS544086A (en) * 1977-06-10 1979-01-12 Fujitsu Ltd Memory circuit unit
JPS6035756B2 (ja) * 1977-12-27 1985-08-16 日本電気株式会社 論理回路
US4176289A (en) * 1978-06-23 1979-11-27 Electronic Memories & Magnetics Corporation Driving circuit for integrated circuit semiconductor memory
US4417162A (en) * 1979-01-11 1983-11-22 Bell Telephone Laboratories, Incorporated Tri-state logic buffer circuit
JPS5833638B2 (ja) * 1979-09-21 1983-07-21 株式会社日立製作所 メモリ装置
US4301518A (en) * 1979-11-01 1981-11-17 Texas Instruments Incorporated Differential sensing of single ended memory array
JPS5847793B2 (ja) * 1979-11-12 1983-10-25 富士通株式会社 半導体記憶装置
JPS5915211B2 (ja) * 1979-11-27 1984-04-07 富士通株式会社 発振回路
JPS5693363A (en) * 1979-12-04 1981-07-28 Fujitsu Ltd Semiconductor memory
US4342102A (en) * 1980-06-18 1982-07-27 Signetics Corporation Semiconductor memory array
US4396998A (en) * 1980-08-27 1983-08-02 Mobay Chemical Corporation Thermally reprogrammable memory array and a thermally reprogrammable memory cell therefor
JPS58139399A (ja) * 1982-02-15 1983-08-18 Hitachi Ltd 半導体記憶装置
FR2528613B1 (fr) * 1982-06-09 1991-09-20 Hitachi Ltd Memoire a semi-conducteurs
US4580067A (en) * 1982-12-28 1986-04-01 Mostek Corporation MOS dynamic load circuit for switching high voltages and adapted for use with high threshold transistors
US4636664A (en) * 1983-01-10 1987-01-13 Ncr Corporation Current sinking responsive MOS sense amplifier
GB2138232A (en) * 1983-03-17 1984-10-17 Romox Inc Reprogrammable cartridge memory
JPH0666115B2 (ja) * 1983-09-26 1994-08-24 株式会社東芝 半導体記憶装置
JPS63204598A (ja) * 1987-02-20 1988-08-24 Toshiba Corp 半導体記憶装置のレフアレンス電位発生回路
EP0332274B1 (fr) * 1988-03-09 1994-06-22 Koninklijke Philips Electronics N.V. EEPROM à mode d'effacement et d'écriture commandé par des données
JPH0810728B2 (ja) * 1990-02-01 1996-01-31 株式会社東芝 半導体記憶装置
US5122985A (en) * 1990-04-16 1992-06-16 Giovani Santin Circuit and method for erasing eeprom memory arrays to prevent over-erased cells
US5241494A (en) * 1990-09-26 1993-08-31 Information Storage Devices Integrated circuit system for analog signal recording and playback
US5126967A (en) * 1990-09-26 1992-06-30 Information Storage Devices, Inc. Writable distributed non-volatile analog reference system and method for analog signal recording and playback
US5220531A (en) * 1991-01-02 1993-06-15 Information Storage Devices, Inc. Source follower storage cell and improved method and apparatus for iterative write for integrated circuit analog signal recording and playback
US5777361A (en) * 1996-06-03 1998-07-07 Motorola, Inc. Single gate nonvolatile memory cell and method for accessing the same
US6731273B2 (en) * 2000-06-27 2004-05-04 Semiconductor Energy Laboratory Co., Ltd. Level shifter
JP4821358B2 (ja) * 2006-02-15 2011-11-24 ミツミ電機株式会社 信号出力回路及び半導体集積回路

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3641512A (en) * 1970-04-06 1972-02-08 Fairchild Camera Instr Co Integrated mnos memory organization
BE789500A (fr) * 1971-09-30 1973-03-29 Siemens Ag Memoire a semiconducteurs avec elements de memorisation a un seul transistor
US3728695A (en) * 1971-10-06 1973-04-17 Intel Corp Random-access floating gate mos memory array
US3747072A (en) * 1972-07-19 1973-07-17 Sperry Rand Corp Integrated static mnos memory circuit
US3846768A (en) * 1972-12-29 1974-11-05 Ibm Fixed threshold variable threshold storage device for use in a semiconductor storage array
JPS5536193B2 (fr) * 1973-05-11 1980-09-19
US3898630A (en) * 1973-10-11 1975-08-05 Ibm High voltage integrated driver circuit
US3893085A (en) * 1973-11-28 1975-07-01 Ibm Read mostly memory cell having bipolar and FAMOS transistor

Also Published As

Publication number Publication date
GB1523743A (en) 1978-09-06
JPS5194729A (fr) 1976-08-19
DE2601622A1 (de) 1976-08-05
GB1523745A (en) 1978-09-06
US3938108A (en) 1976-02-10
DE2601622B2 (de) 1978-07-20
GB1523744A (en) 1978-09-06
JPS568439B2 (fr) 1981-02-24
DE2601622C3 (de) 1979-03-22

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