IT1079567B - Memoria perfezionata - Google Patents
Memoria perfezionataInfo
- Publication number
- IT1079567B IT1079567B IT19960/77A IT1996077A IT1079567B IT 1079567 B IT1079567 B IT 1079567B IT 19960/77 A IT19960/77 A IT 19960/77A IT 1996077 A IT1996077 A IT 1996077A IT 1079567 B IT1079567 B IT 1079567B
- Authority
- IT
- Italy
- Prior art keywords
- improved memory
- memory
- improved
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/0883—Combination of depletion and enhancement field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/656,756 US4075045A (en) | 1976-02-09 | 1976-02-09 | Method for fabricating FET one-device memory cells with two layers of polycrystalline silicon and fabrication of integrated circuits containing arrays of the memory cells charge storage capacitors utilizing five basic pattern deliberating steps |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1079567B true IT1079567B (it) | 1985-05-13 |
Family
ID=24634424
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT19960/77A IT1079567B (it) | 1976-02-09 | 1977-02-04 | Memoria perfezionata |
Country Status (7)
Country | Link |
---|---|
US (2) | US4075045A (it) |
JP (1) | JPS5296876A (it) |
BE (1) | BE850213A (it) |
CA (1) | CA1079866A (it) |
DE (1) | DE2703957C2 (it) |
GB (1) | GB1543659A (it) |
IT (1) | IT1079567B (it) |
Families Citing this family (90)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5168075A (en) * | 1976-09-13 | 1992-12-01 | Texas Instruments Incorporated | Random access memory cell with implanted capacitor region |
US5434438A (en) * | 1976-09-13 | 1995-07-18 | Texas Instruments Inc. | Random access memory cell with a capacitor |
US4600933A (en) * | 1976-12-14 | 1986-07-15 | Standard Microsystems Corporation | Semiconductor integrated circuit structure with selectively modified insulation layer |
GB1575741A (en) * | 1977-01-17 | 1980-09-24 | Philips Electronic Associated | Integrated circuits |
US4151020A (en) * | 1977-01-26 | 1979-04-24 | Texas Instruments Incorporated | High density N-channel silicon gate read only memory |
US4151021A (en) * | 1977-01-26 | 1979-04-24 | Texas Instruments Incorporated | Method of making a high density floating gate electrically programmable ROM |
NL7701172A (nl) * | 1977-02-04 | 1978-08-08 | Philips Nv | Halfgeleidergeheugeninrichting. |
US4205330A (en) * | 1977-04-01 | 1980-05-27 | National Semiconductor Corporation | Method of manufacturing a low voltage n-channel MOSFET device |
DE2740154A1 (de) * | 1977-09-06 | 1979-03-15 | Siemens Ag | Monolithisch integrierte halbleiteranordnung |
US4163243A (en) * | 1977-09-30 | 1979-07-31 | Hewlett-Packard Company | One-transistor memory cell with enhanced capacitance |
US4485390A (en) * | 1978-03-27 | 1984-11-27 | Ncr Corporation | Narrow channel FET |
US4178674A (en) * | 1978-03-27 | 1979-12-18 | Intel Corporation | Process for forming a contact region between layers of polysilicon with an integral polysilicon resistor |
US4191603A (en) * | 1978-05-01 | 1980-03-04 | International Business Machines Corporation | Making semiconductor structure with improved phosphosilicate glass isolation |
US4251571A (en) * | 1978-05-02 | 1981-02-17 | International Business Machines Corporation | Method for forming semiconductor structure with improved isolation between two layers of polycrystalline silicon |
US4180826A (en) * | 1978-05-19 | 1979-12-25 | Intel Corporation | MOS double polysilicon read-only memory and cell |
US4229755A (en) * | 1978-08-15 | 1980-10-21 | Rockwell International Corporation | Fabrication of very large scale integrated circuits containing N-channel silicon gate nonvolatile memory elements |
JPS5530846A (en) * | 1978-08-28 | 1980-03-04 | Hitachi Ltd | Method for manufacturing fixed memory |
US4259366A (en) * | 1978-09-25 | 1981-03-31 | Ibm Corporation | Fabrication method for forming FET gate electrode |
US4210465A (en) * | 1978-11-20 | 1980-07-01 | Ncr Corporation | CISFET Processing including simultaneous implantation of spaced polycrystalline silicon regions and non-memory FET channel |
US4212684A (en) * | 1978-11-20 | 1980-07-15 | Ncr Corporation | CISFET Processing including simultaneous doping of silicon components and FET channels |
US4170500A (en) * | 1979-01-15 | 1979-10-09 | Fairchild Camera And Instrument Corporation | Process for forming field dielectric regions in semiconductor structures without encroaching on device regions |
DE2926416A1 (de) * | 1979-06-29 | 1981-01-22 | Siemens Ag | Dynamische halbleiter-speicherzelle und verfahren zu ihrer herstellung |
US4262298A (en) * | 1979-09-04 | 1981-04-14 | Burroughs Corporation | Ram having a stabilized substrate bias and low-threshold narrow-width transfer gates |
JPS5662353A (en) * | 1979-10-29 | 1981-05-28 | Toshiba Corp | Semiconductor device and its manufacturing method |
US4384301A (en) * | 1979-11-07 | 1983-05-17 | Texas Instruments Incorporated | High performance submicron metal-oxide-semiconductor field effect transistor device structure |
US4409727A (en) * | 1979-11-14 | 1983-10-18 | Ncr Corporation | Methods of making narrow channel field effect transistors |
JPS5681968A (en) * | 1979-12-07 | 1981-07-04 | Toshiba Corp | Manufacture of semiconductor device |
US4329186A (en) * | 1979-12-20 | 1982-05-11 | Ibm Corporation | Simultaneously forming fully implanted DMOS together with enhancement and depletion mode MOSFET devices |
US4458406A (en) * | 1979-12-28 | 1984-07-10 | Ibm Corporation | Making LSI devices with double level polysilicon structures |
US4240845A (en) * | 1980-02-04 | 1980-12-23 | International Business Machines Corporation | Method of fabricating random access memory device |
JPS56116670A (en) * | 1980-02-20 | 1981-09-12 | Hitachi Ltd | Semiconductor integrated circuit device and manufacture thereof |
US4608751A (en) * | 1980-04-07 | 1986-09-02 | Texas Instruments Incorporated | Method of making dynamic memory array |
US5202574A (en) * | 1980-05-02 | 1993-04-13 | Texas Instruments Incorporated | Semiconductor having improved interlevel conductor insulation |
JPS6046545B2 (ja) * | 1980-05-16 | 1985-10-16 | 日本電気株式会社 | 相補型mos記憶回路装置 |
US4317690A (en) * | 1980-06-18 | 1982-03-02 | Signetics Corporation | Self-aligned double polysilicon MOS fabrication |
US4691219A (en) * | 1980-07-08 | 1987-09-01 | International Business Machines Corporation | Self-aligned polysilicon base contact structure |
US4359816A (en) * | 1980-07-08 | 1982-11-23 | International Business Machines Corporation | Self-aligned metal process for field effect transistor integrated circuits |
US4758528A (en) * | 1980-07-08 | 1988-07-19 | International Business Machines Corporation | Self-aligned metal process for integrated circuit metallization |
US4341009A (en) * | 1980-12-05 | 1982-07-27 | International Business Machines Corporation | Method for making an electrical contact to a silicon substrate through a relatively thin layer of silicon dioxide on the surface of the substrate |
US4622735A (en) * | 1980-12-12 | 1986-11-18 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing a semiconductor device utilizing self-aligned silicide regions |
US4446613A (en) * | 1981-10-19 | 1984-05-08 | Intel Corporation | Integrated circuit resistor and method of fabrication |
US4349408A (en) * | 1981-03-26 | 1982-09-14 | Rca Corporation | Method of depositing a refractory metal on a semiconductor substrate |
US4441247A (en) * | 1981-06-29 | 1984-04-10 | Intel Corporation | Method of making MOS device by forming self-aligned polysilicon and tungsten composite gate |
DE3205858A1 (de) * | 1982-02-18 | 1983-08-25 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von dynamischen halbleiter-speicherzellen mit wahlfreiem zugriff (ram) nach der doppel-polysilizium-gate-technologie |
US4547959A (en) * | 1983-02-22 | 1985-10-22 | General Motors Corporation | Uses for buried contacts in integrated circuits |
US4633572A (en) * | 1983-02-22 | 1987-01-06 | General Motors Corporation | Programming power paths in an IC by combined depletion and enhancement implants |
IT1213192B (it) * | 1984-07-19 | 1989-12-14 | Ates Componenti Elettron | Processo per la fabbricazione di transistori ad effetto di campo agate isolato (igfet) ad elevata velocita' di risposta in circuiti integrati ad alta densita'. |
JPS60216578A (ja) * | 1985-03-11 | 1985-10-30 | Nec Corp | 半導体メモリ装置 |
GB2172743B (en) * | 1985-03-23 | 1988-11-16 | Stc Plc | Improvements in integrated circuits |
KR970003903B1 (en) * | 1987-04-24 | 1997-03-22 | Hitachi Mfg Kk | Semiconductor device and fabricating method thereof |
US5195017A (en) * | 1989-12-13 | 1993-03-16 | Texas Instruments Incorporated | Method for forming a polysilicon to polysilicon capacitor and apparatus formed therefrom |
US5100831A (en) * | 1990-02-16 | 1992-03-31 | Sumitomo Electric Industries, Ltd. | Method for fabricating semiconductor device |
US5358890A (en) * | 1993-04-19 | 1994-10-25 | Motorola Inc. | Process for fabricating isolation regions in a semiconductor device |
JPH06349820A (ja) * | 1993-06-11 | 1994-12-22 | Rohm Co Ltd | 半導体装置の製造方法 |
US6780718B2 (en) * | 1993-11-30 | 2004-08-24 | Stmicroelectronics, Inc. | Transistor structure and method for making same |
US5923984A (en) * | 1997-04-21 | 1999-07-13 | Advanced Micro Devices, Inc. | Method of making enhancement-mode and depletion-mode IGFETS with different gate materials |
US5976938A (en) * | 1997-04-21 | 1999-11-02 | Advanced Micro Devices, Inc. | Method of making enhancement-mode and depletion-mode IGFETs with different gate thicknesses |
US5885874A (en) * | 1997-04-21 | 1999-03-23 | Advanced Micro Devices, Inc. | Method of making enhancement-mode and depletion-mode IGFETS using selective doping of a gate material |
US6776792B1 (en) * | 1997-04-24 | 2004-08-17 | Advanced Cardiovascular Systems Inc. | Coated endovascular stent |
JPH118352A (ja) * | 1997-06-14 | 1999-01-12 | Toshiba Microelectron Corp | 半導体集積回路装置及びその製造方法 |
US5963803A (en) * | 1998-02-02 | 1999-10-05 | Advanced Micro Devices, Inc. | Method of making N-channel and P-channel IGFETs with different gate thicknesses and spacer widths |
US6066525A (en) * | 1998-04-07 | 2000-05-23 | Lsi Logic Corporation | Method of forming DRAM capacitor by forming separate dielectric layers in a CMOS process |
US6034388A (en) * | 1998-05-15 | 2000-03-07 | International Business Machines Corporation | Depleted polysilicon circuit element and method for producing the same |
US6136656A (en) * | 1998-10-22 | 2000-10-24 | International Business Machines Corporation | Method to create a depleted poly MOSFET |
US6352934B1 (en) * | 1999-08-26 | 2002-03-05 | Infineon Technologies Ag | Sidewall oxide process for improved shallow junction formation in support region |
US6790228B2 (en) * | 1999-12-23 | 2004-09-14 | Advanced Cardiovascular Systems, Inc. | Coating for implantable devices and a method of forming the same |
DE10049175A1 (de) | 2000-09-22 | 2002-04-25 | Tea Gmbh | Biologisch abbaubare Funktionsflüssigkeit für mechanische Antriebe |
US6783793B1 (en) * | 2000-10-26 | 2004-08-31 | Advanced Cardiovascular Systems, Inc. | Selective coating of medical devices |
US6565659B1 (en) * | 2001-06-28 | 2003-05-20 | Advanced Cardiovascular Systems, Inc. | Stent mounting assembly and a method of using the same to coat a stent |
US6800563B2 (en) * | 2001-10-11 | 2004-10-05 | Ovonyx, Inc. | Forming tapered lower electrode phase-change memories |
US20040229453A1 (en) * | 2003-05-15 | 2004-11-18 | Jsr Micro, Inc. | Methods of pore sealing and metal encapsulation in porous low k interconnect |
US7198675B2 (en) * | 2003-09-30 | 2007-04-03 | Advanced Cardiovascular Systems | Stent mandrel fixture and method for selectively coating surfaces of a stent |
US7563324B1 (en) | 2003-12-29 | 2009-07-21 | Advanced Cardiovascular Systems Inc. | System and method for coating an implantable medical device |
US7553377B1 (en) | 2004-04-27 | 2009-06-30 | Advanced Cardiovascular Systems, Inc. | Apparatus and method for electrostatic coating of an abluminal stent surface |
US20050288481A1 (en) * | 2004-04-30 | 2005-12-29 | Desnoyer Jessica R | Design of poly(ester amides) for the control of agent-release from polymeric compositions |
US7527994B2 (en) * | 2004-09-01 | 2009-05-05 | Honeywell International Inc. | Amorphous silicon thin-film transistors and methods of making the same |
US7632307B2 (en) | 2004-12-16 | 2009-12-15 | Advanced Cardiovascular Systems, Inc. | Abluminal, multilayer coating constructs for drug-delivery stents |
US20060216431A1 (en) * | 2005-03-28 | 2006-09-28 | Kerrigan Cameron K | Electrostatic abluminal coating of a stent crimped on a balloon catheter |
JP4718894B2 (ja) * | 2005-05-19 | 2011-07-06 | 株式会社東芝 | 半導体装置の製造方法 |
US7867547B2 (en) | 2005-12-19 | 2011-01-11 | Advanced Cardiovascular Systems, Inc. | Selectively coating luminal surfaces of stents |
US20070148251A1 (en) * | 2005-12-22 | 2007-06-28 | Hossainy Syed F A | Nanoparticle releasing medical devices |
US8003156B2 (en) | 2006-05-04 | 2011-08-23 | Advanced Cardiovascular Systems, Inc. | Rotatable support elements for stents |
US8603530B2 (en) * | 2006-06-14 | 2013-12-10 | Abbott Cardiovascular Systems Inc. | Nanoshell therapy |
US8048448B2 (en) * | 2006-06-15 | 2011-11-01 | Abbott Cardiovascular Systems Inc. | Nanoshells for drug delivery |
US8017237B2 (en) * | 2006-06-23 | 2011-09-13 | Abbott Cardiovascular Systems, Inc. | Nanoshells on polymers |
US8048441B2 (en) | 2007-06-25 | 2011-11-01 | Abbott Cardiovascular Systems, Inc. | Nanobead releasing medical devices |
TWI415137B (zh) * | 2009-12-17 | 2013-11-11 | Macronix Int Co Ltd | 區域字元線驅動器 |
US9449666B2 (en) | 2009-12-17 | 2016-09-20 | Macronix International Co., Ltd. | Local word line driver |
US9570133B2 (en) | 2009-12-17 | 2017-02-14 | Macronix International Co., Ltd. | Local word line driver |
US9281021B2 (en) | 2013-03-14 | 2016-03-08 | Macronix International Co., Ltd. | Method and apparatus for reduced read latency for consecutive read operations of memory of an integrated circuit |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3387286A (en) * | 1967-07-14 | 1968-06-04 | Ibm | Field-effect transistor memory |
GB1261723A (en) * | 1968-03-11 | 1972-01-26 | Associated Semiconductor Mft | Improvements in and relating to semiconductor devices |
FR2014382B1 (it) * | 1968-06-28 | 1974-03-15 | Motorola Inc | |
US3936862A (en) * | 1968-10-02 | 1976-02-03 | National Semiconductor Corporation | MISFET and method of manufacture |
US3775191A (en) * | 1971-06-28 | 1973-11-27 | Bell Canada Northern Electric | Modification of channel regions in insulated gate field effect transistors |
JPS4843590A (it) * | 1971-10-04 | 1973-06-23 | ||
DE2314260A1 (de) * | 1972-05-30 | 1973-12-13 | Ibm | Ladungsgekoppelte halbleiteranordnung und verfahren zu ihrer herstellung |
US3834959A (en) * | 1972-06-30 | 1974-09-10 | Ibm | Process for the formation of selfaligned silicon and aluminum gates |
US3897282A (en) * | 1972-10-17 | 1975-07-29 | Northern Electric Co | Method of forming silicon gate device structures with two or more gate levels |
US3841926A (en) * | 1973-01-02 | 1974-10-15 | Ibm | Integrated circuit fabrication process |
US3811076A (en) * | 1973-01-02 | 1974-05-14 | Ibm | Field effect transistor integrated circuit and memory |
US3899363A (en) * | 1974-06-28 | 1975-08-12 | Ibm | Method and device for reducing sidewall conduction in recessed oxide pet arrays |
US3958323A (en) * | 1975-04-29 | 1976-05-25 | International Business Machines Corporation | Three mask self aligned IGFET fabrication process |
US4033026A (en) * | 1975-12-16 | 1977-07-05 | Intel Corporation | High density/high speed MOS process and device |
-
1976
- 1976-02-09 US US05/656,756 patent/US4075045A/en not_active Expired - Lifetime
- 1976-07-02 US US05/702,247 patent/US4085498A/en not_active Expired - Lifetime
-
1977
- 1977-01-07 BE BE173942A patent/BE850213A/xx not_active IP Right Cessation
- 1977-01-10 GB GB809/77A patent/GB1543659A/en not_active Expired
- 1977-01-28 JP JP793177A patent/JPS5296876A/ja active Granted
- 1977-02-01 DE DE2703957A patent/DE2703957C2/de not_active Expired
- 1977-02-03 CA CA271,024A patent/CA1079866A/en not_active Expired
- 1977-02-04 IT IT19960/77A patent/IT1079567B/it active
Also Published As
Publication number | Publication date |
---|---|
JPS5296876A (en) | 1977-08-15 |
DE2703957A1 (de) | 1977-08-11 |
GB1543659A (en) | 1979-04-04 |
BE850213A (fr) | 1977-05-02 |
JPS571144B2 (it) | 1982-01-09 |
US4085498A (en) | 1978-04-25 |
US4075045A (en) | 1978-02-21 |
DE2703957C2 (de) | 1982-10-28 |
CA1079866A (en) | 1980-06-17 |
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