NL7510177A - Geintegreerde geheugenconfiguratie. - Google Patents

Geintegreerde geheugenconfiguratie.

Info

Publication number
NL7510177A
NL7510177A NL7510177A NL7510177A NL7510177A NL 7510177 A NL7510177 A NL 7510177A NL 7510177 A NL7510177 A NL 7510177A NL 7510177 A NL7510177 A NL 7510177A NL 7510177 A NL7510177 A NL 7510177A
Authority
NL
Netherlands
Prior art keywords
integrated memory
memory configuration
configuration
integrated
memory
Prior art date
Application number
NL7510177A
Other languages
English (en)
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of NL7510177A publication Critical patent/NL7510177A/nl

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B10/00Static random access memory [SRAM] devices
    • H10B10/10SRAM devices comprising bipolar components
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/02Contacts, special
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/037Diffusion-deposition
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/085Isolated-integrated
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/096Lateral transistor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/109Memory devices
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/117Oxidation, selective
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/139Schottky barrier
NL7510177A 1974-09-03 1975-08-28 Geintegreerde geheugenconfiguratie. NL7510177A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US502675A US3909807A (en) 1974-09-03 1974-09-03 Integrated circuit memory cell

Publications (1)

Publication Number Publication Date
NL7510177A true NL7510177A (nl) 1976-03-05

Family

ID=23998865

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7510177A NL7510177A (nl) 1974-09-03 1975-08-28 Geintegreerde geheugenconfiguratie.

Country Status (12)

Country Link
US (1) US3909807A (nl)
JP (1) JPS5827599B2 (nl)
BE (1) BE832840A (nl)
BR (1) BR7505602A (nl)
CA (1) CA1042101A (nl)
DE (1) DE2538631A1 (nl)
ES (1) ES440562A1 (nl)
FR (1) FR2284164A1 (nl)
GB (1) GB1516711A (nl)
IT (1) IT1042233B (nl)
NL (1) NL7510177A (nl)
SE (1) SE409256B (nl)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4021786A (en) * 1975-10-30 1977-05-03 Fairchild Camera And Instrument Corporation Memory cell circuit and semiconductor structure therefore
JPS597246B2 (ja) * 1975-12-01 1984-02-17 株式会社東芝 ハンドウタイロンリカイロ
DE2557911C2 (de) * 1975-12-22 1982-11-04 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zum Herstellen einer monolithisch integrierten Schaltung
US4137109A (en) * 1976-04-12 1979-01-30 Texas Instruments Incorporated Selective diffusion and etching method for isolation of integrated logic circuit
GB1580977A (en) * 1976-05-31 1980-12-10 Siemens Ag Schottkytransisitor-logic arrangements
NL7606193A (nl) * 1976-06-09 1977-12-13 Philips Nv Geintegreerde schakeling.
GB1565146A (en) * 1976-08-16 1980-04-16 Fairchild Camera Instr Co Random access momory cells
US4087900A (en) * 1976-10-18 1978-05-09 Bell Telephone Laboratories, Incorporated Fabrication of semiconductor integrated circuit structure including injection logic configuration compatible with complementary bipolar transistors utilizing simultaneous formation of device regions
US4101349A (en) * 1976-10-29 1978-07-18 Hughes Aircraft Company Integrated injection logic structure fabricated by outdiffusion and epitaxial deposition
US4132573A (en) * 1977-02-08 1979-01-02 Murata Manufacturing Co., Ltd. Method of manufacturing a monolithic integrated circuit utilizing epitaxial deposition and simultaneous outdiffusion
DE2739283A1 (de) * 1977-08-31 1979-03-15 Siemens Ag Integrierbare halbleiterspeicherzelle
US4112511A (en) * 1977-09-13 1978-09-05 Signetics Corporation Four transistor static bipolar memory cell using merged transistors
FR2414778A1 (fr) * 1978-01-13 1979-08-10 Thomson Csf Element de memoire statique a acces aleatoire
US4240846A (en) * 1978-06-27 1980-12-23 Harris Corporation Method of fabricating up diffused substrate FED logic utilizing a two-step epitaxial deposition
JPS5829628B2 (ja) * 1979-11-22 1983-06-23 富士通株式会社 半導体記憶装置
FR2482368A1 (fr) * 1980-05-12 1981-11-13 Thomson Csf Operateur logique a injection par le substrat et son procede de fabrication
US4400712A (en) * 1981-02-13 1983-08-23 Bell Telephone Laboratories, Incorporated Static bipolar random access memory
US4387445A (en) * 1981-02-24 1983-06-07 International Business Machines Corporation Random access memory cell
JPS57167675A (en) * 1981-04-08 1982-10-15 Nec Corp Semiconductor device
US4543595A (en) * 1982-05-20 1985-09-24 Fairchild Camera And Instrument Corporation Bipolar memory cell
US4635230A (en) * 1984-12-18 1987-01-06 Advanced Micro Devices, Inc. Emitter coupled logic bipolar memory cell
US4669180A (en) * 1984-12-18 1987-06-02 Advanced Micro Devices, Inc. Method of forming emitter coupled logic bipolar memory cell using polysilicon Schottky diodes for coupling
US4654824A (en) * 1984-12-18 1987-03-31 Advanced Micro Devices, Inc. Emitter coupled logic bipolar memory cell
JPH03178166A (ja) * 1989-12-07 1991-08-02 Matsushita Electron Corp バイポーラ型半導体記憶装置
US5276638A (en) * 1991-07-31 1994-01-04 International Business Machines Corporation Bipolar memory cell with isolated PNP load

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3575741A (en) * 1968-02-05 1971-04-20 Bell Telephone Labor Inc Method for producing semiconductor integrated circuit device and product produced thereby
US3564300A (en) * 1968-03-06 1971-02-16 Ibm Pulse power data storage cell
US3537078A (en) * 1968-07-11 1970-10-27 Ibm Memory cell with a non-linear collector load
US3655457A (en) * 1968-08-06 1972-04-11 Ibm Method of making or modifying a pn-junction by ion implantation
US3815106A (en) * 1972-05-11 1974-06-04 S Wiedmann Flip-flop memory cell arrangement
US3643230A (en) * 1970-09-03 1972-02-15 Bell Telephone Labor Inc Serial storage and transfer apparatus employing charge-storage diodes in interstage coupling circuitry
JPS5619035B2 (nl) * 1972-06-20 1981-05-02

Also Published As

Publication number Publication date
BR7505602A (pt) 1976-08-03
CA1042101A (en) 1978-11-07
JPS5827599B2 (ja) 1983-06-10
US3909807A (en) 1975-09-30
JPS5152247A (nl) 1976-05-08
DE2538631A1 (de) 1976-03-11
BE832840A (fr) 1975-12-16
SE409256B (sv) 1979-08-06
GB1516711A (en) 1978-07-05
SE7509475L (sv) 1976-03-04
FR2284164A1 (fr) 1976-04-02
FR2284164B1 (nl) 1978-04-07
ES440562A1 (es) 1977-03-01
IT1042233B (it) 1980-01-30

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Legal Events

Date Code Title Description
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BV The patent application has lapsed