IT1043638B - Memoria perfezionata - Google Patents
Memoria perfezionataInfo
- Publication number
- IT1043638B IT1043638B IT28648/75A IT2864875A IT1043638B IT 1043638 B IT1043638 B IT 1043638B IT 28648/75 A IT28648/75 A IT 28648/75A IT 2864875 A IT2864875 A IT 2864875A IT 1043638 B IT1043638 B IT 1043638B
- Authority
- IT
- Italy
- Prior art keywords
- improved memory
- memory
- improved
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/10—SRAM devices comprising bipolar components
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2460150A DE2460150C2 (de) | 1974-12-19 | 1974-12-19 | Monolitisch integrierbare Speicheranordnung |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1043638B true IT1043638B (it) | 1980-02-29 |
Family
ID=5933872
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT28648/75A IT1043638B (it) | 1974-12-19 | 1975-10-24 | Memoria perfezionata |
Country Status (6)
Country | Link |
---|---|
US (1) | US3986173A (it) |
JP (1) | JPS5727550B2 (it) |
DE (1) | DE2460150C2 (it) |
FR (1) | FR2295527A1 (it) |
GB (1) | GB1472817A (it) |
IT (1) | IT1043638B (it) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4016551A (en) * | 1976-03-10 | 1977-04-05 | Data General Corporation | Dynamic MOS memory with reduced propagation delay |
US4150392A (en) * | 1976-07-31 | 1979-04-17 | Nippon Gakki Seizo Kabushiki Kaisha | Semiconductor integrated flip-flop circuit device including merged bipolar and field effect transistors |
GB1565146A (en) * | 1976-08-16 | 1980-04-16 | Fairchild Camera Instr Co | Random access momory cells |
US4290185A (en) * | 1978-11-03 | 1981-09-22 | Mostek Corporation | Method of making an extremely low current load device for integrated circuit |
US4251876A (en) * | 1978-11-03 | 1981-02-17 | Mostek Corporation | Extremely low current load device for integrated circuit |
JPS58213450A (ja) * | 1982-06-04 | 1983-12-12 | Toshiba Corp | 半導体装置の多層配線構造 |
DE3330013A1 (de) * | 1983-08-19 | 1985-02-28 | Siemens AG, 1000 Berlin und 8000 München | Statische speicherzelle |
US4868628A (en) * | 1984-08-22 | 1989-09-19 | Signetics Corporation | CMOS RAM with merged bipolar transistor |
DE3529422A1 (de) * | 1985-08-16 | 1987-02-26 | Stabilus Gmbh | Dichtung fuer pneumatische, hydraulische oder hydropneumatische aggregate |
US4821235A (en) * | 1986-04-17 | 1989-04-11 | Fairchild Semiconductor Corporation | Translinear static memory cell with bipolar and MOS devices |
US4991138A (en) * | 1989-04-03 | 1991-02-05 | International Business Machines Corporation | High speed memory cell with multiple port capability |
SE9002558D0 (sv) * | 1990-08-02 | 1990-08-02 | Carlstedt Elektronik Ab | Processor |
JPH04318395A (ja) * | 1991-02-13 | 1992-11-09 | Internatl Business Mach Corp <Ibm> | メモリセル回路 |
JP3400894B2 (ja) * | 1995-07-14 | 2003-04-28 | 三菱電機株式会社 | スタティック型半導体記憶装置 |
US5717629A (en) * | 1996-10-24 | 1998-02-10 | Yin; Ronald Loh-Hwa | Memory circuit and method of operation therefor |
US5671182A (en) * | 1996-10-24 | 1997-09-23 | Yin; Ronald Loh-Hwa | SRAM memory circuit and method of operation therefor |
US5875127A (en) * | 1996-10-24 | 1999-02-23 | Yin; Ronald Loh-Hwa | Non-volatile semiconductor memory device having a floating gate storage capacitor and method of operating thereof |
US5825687A (en) * | 1996-12-04 | 1998-10-20 | Yin; Ronald Loh-Hwa | Low voltage memory cell, circuit array formed thereby and method of operation therefor |
JP3741053B2 (ja) * | 2002-02-18 | 2006-02-01 | ソニー株式会社 | 画像処理装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1564148A (it) * | 1967-05-25 | 1969-04-18 | ||
DE1774128A1 (de) * | 1968-04-13 | 1971-07-08 | Ibm Deutschland | Monolithische Speicherzelle |
US3815106A (en) * | 1972-05-11 | 1974-06-04 | S Wiedmann | Flip-flop memory cell arrangement |
US3553541A (en) * | 1969-04-17 | 1971-01-05 | Bell Telephone Labor Inc | Bilateral switch using combination of field effect transistors and bipolar transistors |
NL7107040A (it) * | 1971-05-22 | 1972-11-24 | ||
GB1390034A (en) * | 1971-09-22 | 1975-04-09 | Ferranti Ltd | Semiconductor information storage devices |
US3747078A (en) * | 1972-06-28 | 1973-07-17 | Ibm | Compensation technique for variations in bit line impedance |
US3849675A (en) * | 1973-01-05 | 1974-11-19 | Bell Telephone Labor Inc | Low power flip-flop circuits |
US3879621A (en) * | 1973-04-18 | 1975-04-22 | Ibm | Sense amplifier |
-
1974
- 1974-12-19 DE DE2460150A patent/DE2460150C2/de not_active Expired
-
1975
- 1975-10-08 US US05/620,690 patent/US3986173A/en not_active Expired - Lifetime
- 1975-10-20 FR FR7533269A patent/FR2295527A1/fr active Granted
- 1975-10-23 GB GB4350875A patent/GB1472817A/en not_active Expired
- 1975-10-24 IT IT28648/75A patent/IT1043638B/it active
- 1975-12-05 JP JP14408575A patent/JPS5727550B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1472817A (en) | 1977-05-11 |
DE2460150C2 (de) | 1984-07-12 |
FR2295527A1 (fr) | 1976-07-16 |
FR2295527B1 (it) | 1978-04-07 |
JPS5183740A (it) | 1976-07-22 |
DE2460150A1 (de) | 1976-06-24 |
JPS5727550B2 (it) | 1982-06-11 |
US3986173A (en) | 1976-10-12 |
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