GB1390034A - Semiconductor information storage devices - Google Patents

Semiconductor information storage devices

Info

Publication number
GB1390034A
GB1390034A GB4426371A GB4426371A GB1390034A GB 1390034 A GB1390034 A GB 1390034A GB 4426371 A GB4426371 A GB 4426371A GB 4426371 A GB4426371 A GB 4426371A GB 1390034 A GB1390034 A GB 1390034A
Authority
GB
United Kingdom
Prior art keywords
read
write
circuit
select line
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4426371A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ferranti International PLC
Original Assignee
Ferranti PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ferranti PLC filed Critical Ferranti PLC
Priority to GB4426371A priority Critical patent/GB1390034A/en
Priority to DE19722246331 priority patent/DE2246331A1/en
Priority to JP47094723A priority patent/JPS4840343A/ja
Priority to BR660472A priority patent/BR7206604D0/en
Publication of GB1390034A publication Critical patent/GB1390034A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/4067—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the bipolar type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0635—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors

Abstract

1390034 Transistor data storage circuits FERRANTI Ltd 21 Sept 1972 [22 Sept 1971] 44263/71 Heading H3T [Also in Division H1] Data digits to be stored on capacitance 21 are fed to it through a reverse-conducting bipolar transistor 18, and they then determine the conductivity condition of a junction FET 20 during read-out-to-write, a write select line 14 goes high when all inputs to circuit 11 (details Fig. 2, not shown) are high, and enables transistor 18 to charge C21 to a high level by reverse conductions if a high level exists on write line 16, or to a low level by forward conduction if a low level exists on 16. The P-channel junction FET 20 conducts only if no charge is stored on C20, and this condition is detected by earthing the read select line 15 (by T31, Fig. 2, not shown) and producing current flow from the read circuit 13 (details, Fig. 4, not shown). Such current flow (through T41, T40) turns off an output transistor (46) in the read circuit to give a high output at G. The high potential on write select line 14 is produced by the same set of allhigh inputs A-E as produce the low potential on read-select line 15, but after a delay determined by a diode D1 to allow for completion of read out. The write circuit 12 (details, Fig. 3, not shown) responds to either new information F, or to the feed-back output G of the read circuit for refreshing purposes.
GB4426371A 1971-09-22 1971-09-22 Semiconductor information storage devices Expired GB1390034A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB4426371A GB1390034A (en) 1971-09-22 1971-09-22 Semiconductor information storage devices
DE19722246331 DE2246331A1 (en) 1971-09-22 1972-09-21 SEMICONDUCTOR STORAGE
JP47094723A JPS4840343A (en) 1971-09-22 1972-09-22
BR660472A BR7206604D0 (en) 1971-09-22 1972-09-25 A DATA PROCESSING DEVICE WITH A SEMICONDUCTOR DEVICE

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4426371A GB1390034A (en) 1971-09-22 1971-09-22 Semiconductor information storage devices

Publications (1)

Publication Number Publication Date
GB1390034A true GB1390034A (en) 1975-04-09

Family

ID=10432499

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4426371A Expired GB1390034A (en) 1971-09-22 1971-09-22 Semiconductor information storage devices

Country Status (4)

Country Link
JP (1) JPS4840343A (en)
BR (1) BR7206604D0 (en)
DE (1) DE2246331A1 (en)
GB (1) GB1390034A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4209795A (en) * 1976-12-06 1980-06-24 Nippon Gakki Seizo Kabushiki Kaisha Jsit-type field effect transistor with deep level channel doping

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2460150C2 (en) * 1974-12-19 1984-07-12 Ibm Deutschland Gmbh, 7000 Stuttgart Storage arrangement that can be monolithically integrated
DE2820321A1 (en) * 1978-05-10 1979-11-15 Hoechst Ag METHOD OF MANUFACTURING MONOARYLTHIOURA
DE3824694A1 (en) * 1988-07-20 1990-02-01 Fraunhofer Ges Forschung SEMICONDUCTOR CIRCUIT FOR FAST SWITCHING PROCESSES

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4209795A (en) * 1976-12-06 1980-06-24 Nippon Gakki Seizo Kabushiki Kaisha Jsit-type field effect transistor with deep level channel doping

Also Published As

Publication number Publication date
DE2246331A1 (en) 1973-03-29
BR7206604D0 (en) 1973-08-30
JPS4840343A (en) 1973-06-13

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees