JPS5758354A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5758354A
JPS5758354A JP13326080A JP13326080A JPS5758354A JP S5758354 A JPS5758354 A JP S5758354A JP 13326080 A JP13326080 A JP 13326080A JP 13326080 A JP13326080 A JP 13326080A JP S5758354 A JPS5758354 A JP S5758354A
Authority
JP
Japan
Prior art keywords
junction
layers
heating
junctions
writing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13326080A
Other languages
Japanese (ja)
Inventor
Hideo Yoshino
Eisuke Arai
Kazuhide Kiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP13326080A priority Critical patent/JPS5758354A/en
Priority to FR8116811A priority patent/FR2490860B1/en
Priority to US06/300,345 priority patent/US4538167A/en
Priority to CA000385573A priority patent/CA1177957A/en
Priority to GB8128004A priority patent/GB2086653B/en
Priority to DE3137730A priority patent/DE3137730C2/en
Priority to NLAANVRAGE8104364,A priority patent/NL189163C/en
Publication of JPS5758354A publication Critical patent/JPS5758354A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To obtain the semiconductor device having highly reliable PROM function which consumes minor power for writing in by a method wherein a substance of low thermal conductivity is provided in close vicinity to the heating section, containing a P-N junction, on an Si substrate and the P-N junctions is broken down by the heating of current application. CONSTITUTION:An amorphous Si thin film is deposited on a quartz glass plate 20 and a patterning is performed. After a laser annealing has been performed, a P- layer 21 and N<+> layers 23 and 25 are formed by implanting a B ion in a layer 21 and an As ion in layers 23 and 25. An SiO2 film 26, having low thermal conductivity, is covered on the above, an aperture is selectively provided and Al conductive layers 27 and 28 are formed. According to this constitution, at the time when voltage is applied to conductive layers 27 and 28, they are highly resistive at the breakdown voltage below VB, they are broken down by the heating of the PN junction 22 or 24 when the breakdown voltage exceeds VB, they are conduted and program is wrote in. As the PN junctions 22 and 24 are covered by the SiO226, the radiation to the outside of the generated heat at the PN junction is prvented, programming can be performed by mirror power application, the highly accurate positional control of the P-N junction can be performed easily and a high resistive condition can also be obtained easily before performance of writing in.
JP13326080A 1980-09-24 1980-09-24 Semiconductor device Pending JPS5758354A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP13326080A JPS5758354A (en) 1980-09-24 1980-09-24 Semiconductor device
FR8116811A FR2490860B1 (en) 1980-09-24 1981-09-04 PROGRAMMABLE STORAGE SEMICONDUCTOR WITH ONLY READING, OF SHORT-JUNCTION TYPE
US06/300,345 US4538167A (en) 1980-09-24 1981-09-08 Shorted junction type programmable read only memory semiconductor devices
CA000385573A CA1177957A (en) 1980-09-24 1981-09-10 Shorted junction type programmable read only memory semi-conductor devices
GB8128004A GB2086653B (en) 1980-09-24 1981-09-16 Shorted-junction programmable read only memory semiconductor devices
DE3137730A DE3137730C2 (en) 1980-09-24 1981-09-22 Semiconductor component for programmable read-only memories
NLAANVRAGE8104364,A NL189163C (en) 1980-09-24 1981-09-23 PROM SEMICONDUCTOR ELEMENT.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13326080A JPS5758354A (en) 1980-09-24 1980-09-24 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5758354A true JPS5758354A (en) 1982-04-08

Family

ID=15100452

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13326080A Pending JPS5758354A (en) 1980-09-24 1980-09-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5758354A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57145365A (en) * 1981-03-05 1982-09-08 Seiko Epson Corp Semiconductor fixing circuit device
JPS58209157A (en) * 1982-05-31 1983-12-06 Seiko Epson Corp Semiconductor memory cell
JPS59160893A (en) * 1983-03-01 1984-09-11 Nippon Telegr & Teleph Corp <Ntt> Read-only memory

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54155784A (en) * 1978-05-30 1979-12-08 Nec Corp Manufacture of semiconductor integrated-circuit device
JPS5521113A (en) * 1978-08-02 1980-02-15 Hitachi Ltd Junction break-down type programmable read-only memory semiconductor device
JPS55105365A (en) * 1979-02-07 1980-08-12 Nec Corp Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54155784A (en) * 1978-05-30 1979-12-08 Nec Corp Manufacture of semiconductor integrated-circuit device
JPS5521113A (en) * 1978-08-02 1980-02-15 Hitachi Ltd Junction break-down type programmable read-only memory semiconductor device
JPS55105365A (en) * 1979-02-07 1980-08-12 Nec Corp Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57145365A (en) * 1981-03-05 1982-09-08 Seiko Epson Corp Semiconductor fixing circuit device
JPS58209157A (en) * 1982-05-31 1983-12-06 Seiko Epson Corp Semiconductor memory cell
JPS59160893A (en) * 1983-03-01 1984-09-11 Nippon Telegr & Teleph Corp <Ntt> Read-only memory
JPS623517B2 (en) * 1983-03-01 1987-01-26 Nippon Telegraph & Telephone

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