JPS5787162A - Semiconductor memory storage - Google Patents

Semiconductor memory storage

Info

Publication number
JPS5787162A
JPS5787162A JP16256580A JP16256580A JPS5787162A JP S5787162 A JPS5787162 A JP S5787162A JP 16256580 A JP16256580 A JP 16256580A JP 16256580 A JP16256580 A JP 16256580A JP S5787162 A JPS5787162 A JP S5787162A
Authority
JP
Japan
Prior art keywords
region
electrode
semiconductor memory
memory storage
writing operation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16256580A
Other languages
Japanese (ja)
Other versions
JPS5834948B2 (en
Inventor
Hideo Yoshino
Eisuke Arai
Kazuhide Kiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP55162565A priority Critical patent/JPS5834948B2/en
Priority to FR8116811A priority patent/FR2490860B1/en
Priority to US06/300,345 priority patent/US4538167A/en
Priority to CA000385573A priority patent/CA1177957A/en
Priority to GB8128004A priority patent/GB2086653B/en
Priority to DE3137730A priority patent/DE3137730C2/en
Priority to NLAANVRAGE8104364,A priority patent/NL189163C/en
Publication of JPS5787162A publication Critical patent/JPS5787162A/en
Publication of JPS5834948B2 publication Critical patent/JPS5834948B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE:To perform the information writing operation at low voltage and small power, to simplify the circuit design as well as to increase the reliability for the subject semiconductor memory storage by a method wherein a limiting electrode is provided in addition to a writing electrode on a junction breakdown type PROM element, and a field effect or a current injection effect is generated. CONSTITUTION:On the substrate 18 consisting of quartz glass and the like, for example, a single crystal Si layer is formed using laser annealing, an N<+> region 20, a P- region 21 and an N<+> region 22, for example, are formed by performing an ion injection, and then junctions 23 and 24 are formed between each region. On the transverse type N<+>PN<+> structure, a limiting electrode 26 such as an Mo and the like is provided through the intermediary of an oxide film 25, and the voltage generating an N type inverted channel is applied to the region 21 when a writing operation is performed. Also, an ohmic electrode such as Al and the like is provided on the region 21, too, as a limiting electrode 31 and when the writing operation is performed, a current is injected by applying a control circuit with which one of junctions will be biased and the circumference of the junction is covered by an insulating layer and the heat rediation can be reduced, thereby enabling to operate the subject semiconductor memory storage using small power.
JP55162565A 1980-09-24 1980-11-20 semiconductor storage device Expired JPS5834948B2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP55162565A JPS5834948B2 (en) 1980-11-20 1980-11-20 semiconductor storage device
FR8116811A FR2490860B1 (en) 1980-09-24 1981-09-04 PROGRAMMABLE STORAGE SEMICONDUCTOR WITH ONLY READING, OF SHORT-JUNCTION TYPE
US06/300,345 US4538167A (en) 1980-09-24 1981-09-08 Shorted junction type programmable read only memory semiconductor devices
CA000385573A CA1177957A (en) 1980-09-24 1981-09-10 Shorted junction type programmable read only memory semi-conductor devices
GB8128004A GB2086653B (en) 1980-09-24 1981-09-16 Shorted-junction programmable read only memory semiconductor devices
DE3137730A DE3137730C2 (en) 1980-09-24 1981-09-22 Semiconductor component for programmable read-only memories
NLAANVRAGE8104364,A NL189163C (en) 1980-09-24 1981-09-23 PROM SEMICONDUCTOR ELEMENT.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55162565A JPS5834948B2 (en) 1980-11-20 1980-11-20 semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS5787162A true JPS5787162A (en) 1982-05-31
JPS5834948B2 JPS5834948B2 (en) 1983-07-29

Family

ID=15757000

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55162565A Expired JPS5834948B2 (en) 1980-09-24 1980-11-20 semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS5834948B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57145365A (en) * 1981-03-05 1982-09-08 Seiko Epson Corp Semiconductor fixing circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57145365A (en) * 1981-03-05 1982-09-08 Seiko Epson Corp Semiconductor fixing circuit device

Also Published As

Publication number Publication date
JPS5834948B2 (en) 1983-07-29

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