JPS57145365A - Semiconductor fixing circuit device - Google Patents

Semiconductor fixing circuit device

Info

Publication number
JPS57145365A
JPS57145365A JP3157981A JP3157981A JPS57145365A JP S57145365 A JPS57145365 A JP S57145365A JP 3157981 A JP3157981 A JP 3157981A JP 3157981 A JP3157981 A JP 3157981A JP S57145365 A JPS57145365 A JP S57145365A
Authority
JP
Japan
Prior art keywords
film
junction
junctions
voltage
conduction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3157981A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP3157981A priority Critical patent/JPS57145365A/en
Publication of JPS57145365A publication Critical patent/JPS57145365A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout

Abstract

PURPOSE:To leave only necessary junctions, by providing a semiconductor film on the surface of a dielectric substrate, arranging elements having PN junctions in the horizontal direction or in the vertical directions, connecting said electrodes by longitudinal and lateral wirings, applying a voltage only to the desired wiring, destroying the junctions at the intersections, thereby providing the conduction. CONSTITUTION:An SiO2 film 2 is formed on the surface of the Si substrate 1 by heat oxidation, and an Si film is deposited thereon. The yielded polycystal Si film is transformed into the single crystal by laser annealing and the like. Then, after the photoetching of the desired part, a P type region 3 and an N type region 4 are formed by photoresist exposure and ion implantation and the P-N junction is constituted. Then Al wirings X and Y are provided on said regions. Thus, a plurality of elements are formed on the same substrate, the voltage is applied to one wiring, and the quality of the internal logic is judged. When the junction is not left and the circuit is constituted by conduction, a high voltage is applied to X and Y electrodes in the reverse direction, and the junction is destroyed.
JP3157981A 1981-03-05 1981-03-05 Semiconductor fixing circuit device Pending JPS57145365A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3157981A JPS57145365A (en) 1981-03-05 1981-03-05 Semiconductor fixing circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3157981A JPS57145365A (en) 1981-03-05 1981-03-05 Semiconductor fixing circuit device

Publications (1)

Publication Number Publication Date
JPS57145365A true JPS57145365A (en) 1982-09-08

Family

ID=12335088

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3157981A Pending JPS57145365A (en) 1981-03-05 1981-03-05 Semiconductor fixing circuit device

Country Status (1)

Country Link
JP (1) JPS57145365A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02246266A (en) * 1989-03-20 1990-10-02 Mitsubishi Electric Corp Manufacture of mask rom
WO2016067896A1 (en) * 2014-10-31 2016-05-06 株式会社フローディア Anti-fuse memory and semiconductor storage device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5342689A (en) * 1976-09-30 1978-04-18 Fujitsu Ltd Semiconductor device
JPS54155785A (en) * 1978-05-30 1979-12-08 Fujitsu Ltd Semiconductor memory unit
JPS5624968A (en) * 1979-08-09 1981-03-10 Nippon Telegr & Teleph Corp <Ntt> Programmable read-only semiconductor memory cell and programmable read-only semiconductor memory circuit device using the same
JPS5758354A (en) * 1980-09-24 1982-04-08 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
JPS5787162A (en) * 1980-11-20 1982-05-31 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory storage

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5342689A (en) * 1976-09-30 1978-04-18 Fujitsu Ltd Semiconductor device
JPS54155785A (en) * 1978-05-30 1979-12-08 Fujitsu Ltd Semiconductor memory unit
JPS5624968A (en) * 1979-08-09 1981-03-10 Nippon Telegr & Teleph Corp <Ntt> Programmable read-only semiconductor memory cell and programmable read-only semiconductor memory circuit device using the same
JPS5758354A (en) * 1980-09-24 1982-04-08 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
JPS5787162A (en) * 1980-11-20 1982-05-31 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory storage

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02246266A (en) * 1989-03-20 1990-10-02 Mitsubishi Electric Corp Manufacture of mask rom
WO2016067896A1 (en) * 2014-10-31 2016-05-06 株式会社フローディア Anti-fuse memory and semiconductor storage device
JP2016091574A (en) * 2014-10-31 2016-05-23 株式会社フローディア Anti-fuse memory and semiconductor storage device

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