JPS55105365A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55105365A
JPS55105365A JP1294779A JP1294779A JPS55105365A JP S55105365 A JPS55105365 A JP S55105365A JP 1294779 A JP1294779 A JP 1294779A JP 1294779 A JP1294779 A JP 1294779A JP S55105365 A JPS55105365 A JP S55105365A
Authority
JP
Japan
Prior art keywords
junction
layer
base
emitter
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1294779A
Other languages
Japanese (ja)
Other versions
JPH0133948B2 (en
Inventor
Norio Kususe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1294779A priority Critical patent/JPS55105365A/en
Publication of JPS55105365A publication Critical patent/JPS55105365A/en
Publication of JPH0133948B2 publication Critical patent/JPH0133948B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To obtain a junction-break type memory that requires less energy for writing by making the space between the base-collector junction and the base-emitter junction approximately fixed in the direction of the surface, side and depth of the base layer. CONSTITUTION:The N<+> embedded collector layer 2, N epitaxial layer 3, shallow P-type base layer 4, N<+> emitter layer 5, collector electrode layer 6 and SiO2 film 7 that is selectively oxidized by the use of Si3N4 masks are formed on the P-type substrate 1. Also the base layer 4 and the emitter layer 5 are formed the same opening by a diffusion process. In this way, the oxidation proceeds also in the lateral direction of the substrate when selectively oxidized by the use of Si3N4 masks, the effective junction area can be made less than the designed value. Also, since the emitter-base junction is formed by self-matching, the element area can be reduced. Accordingly energy required for the writing can be reduced, a junction- break type PROM that has a high integration and is capable of high speed operation can be obtained.
JP1294779A 1979-02-07 1979-02-07 Semiconductor device Granted JPS55105365A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1294779A JPS55105365A (en) 1979-02-07 1979-02-07 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1294779A JPS55105365A (en) 1979-02-07 1979-02-07 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS55105365A true JPS55105365A (en) 1980-08-12
JPH0133948B2 JPH0133948B2 (en) 1989-07-17

Family

ID=11819466

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1294779A Granted JPS55105365A (en) 1979-02-07 1979-02-07 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55105365A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5758354A (en) * 1980-09-24 1982-04-08 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4916232A (en) * 1972-06-05 1974-02-13
JPS4975280A (en) * 1972-11-24 1974-07-19
JPS5167081A (en) * 1974-12-07 1976-06-10 Fujitsu Ltd
JPS5521113A (en) * 1978-08-02 1980-02-15 Hitachi Ltd Junction break-down type programmable read-only memory semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4916232A (en) * 1972-06-05 1974-02-13
JPS4975280A (en) * 1972-11-24 1974-07-19
JPS5167081A (en) * 1974-12-07 1976-06-10 Fujitsu Ltd
JPS5521113A (en) * 1978-08-02 1980-02-15 Hitachi Ltd Junction break-down type programmable read-only memory semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5758354A (en) * 1980-09-24 1982-04-08 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device

Also Published As

Publication number Publication date
JPH0133948B2 (en) 1989-07-17

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