DE3855533T2 - Halbleiteranordnung mit isoliertem Gate - Google Patents
Halbleiteranordnung mit isoliertem GateInfo
- Publication number
- DE3855533T2 DE3855533T2 DE3855533T DE3855533T DE3855533T2 DE 3855533 T2 DE3855533 T2 DE 3855533T2 DE 3855533 T DE3855533 T DE 3855533T DE 3855533 T DE3855533 T DE 3855533T DE 3855533 T2 DE3855533 T2 DE 3855533T2
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- insulated gate
- gate semiconductor
- insulated
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7804—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7806—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a Schottky barrier diode
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1987199984U JPH01104052U (de) | 1987-12-28 | 1987-12-28 | |
JP63110105A JPH07105495B2 (ja) | 1988-05-06 | 1988-05-06 | 絶縁ゲート型半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3855533D1 DE3855533D1 (de) | 1996-10-17 |
DE3855533T2 true DE3855533T2 (de) | 1997-01-23 |
Family
ID=26449783
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3855533T Expired - Fee Related DE3855533T2 (de) | 1987-12-28 | 1988-12-27 | Halbleiteranordnung mit isoliertem Gate |
Country Status (4)
Country | Link |
---|---|
US (1) | US5012313A (de) |
EP (1) | EP0322860B1 (de) |
KR (1) | KR910009041B1 (de) |
DE (1) | DE3855533T2 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02185069A (ja) * | 1988-12-02 | 1990-07-19 | Motorola Inc | 高エネルギー阻止能力及び温度補償された阻止電圧を具備する半導体デバイス |
JPH03238868A (ja) * | 1990-02-15 | 1991-10-24 | Nec Corp | 縦型電界効果トランジスタ |
US5536958A (en) * | 1995-05-02 | 1996-07-16 | Motorola, Inc. | Semiconductor device having high voltage protection capability |
KR19990024644A (ko) * | 1997-09-04 | 1999-04-06 | 윤종용 | 정전기 파괴 현상을 방지하는 트랜지스터 접속 구조 |
USRE39556E1 (en) * | 1997-11-20 | 2007-04-10 | Relion, Inc. | Fuel cell and method for controlling same |
DE69930715T2 (de) * | 1999-01-25 | 2007-03-29 | Stmicroelectronics S.R.L., Agrate Brianza | Elektronische Halbleiterleistung mit integrierter Diode |
JP4917709B2 (ja) * | 2000-03-06 | 2012-04-18 | ローム株式会社 | 半導体装置 |
JP2002208702A (ja) * | 2001-01-10 | 2002-07-26 | Mitsubishi Electric Corp | パワー半導体装置 |
JP5511124B2 (ja) * | 2006-09-28 | 2014-06-04 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 絶縁ゲート型半導体装置 |
JP2008085188A (ja) * | 2006-09-28 | 2008-04-10 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置 |
JP5337470B2 (ja) * | 2008-04-21 | 2013-11-06 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 絶縁ゲート型半導体装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3728591A (en) * | 1971-09-03 | 1973-04-17 | Rca Corp | Gate protective device for insulated gate field-effect transistors |
US3964084A (en) * | 1974-06-12 | 1976-06-15 | Bell Telephone Laboratories, Incorporated | Schottky barrier diode contacts |
US3987216A (en) * | 1975-12-31 | 1976-10-19 | International Business Machines Corporation | Method of forming schottky barrier junctions having improved barrier height |
JPS5591173A (en) * | 1978-12-28 | 1980-07-10 | Mitsubishi Electric Corp | Semiconductor integrated circuit device |
FR2490860B1 (fr) * | 1980-09-24 | 1986-11-28 | Nippon Telegraph & Telephone | Dispositif semi-conducteur de memorisation programmable a lecture seule, de type a jonction en court-circuit |
JPS57141962A (en) * | 1981-02-27 | 1982-09-02 | Hitachi Ltd | Semiconductor integrated circuit device |
NL8103376A (nl) * | 1981-07-16 | 1983-02-16 | Philips Nv | Weergeefinrichting. |
JPS5825264A (ja) * | 1981-08-07 | 1983-02-15 | Hitachi Ltd | 絶縁ゲート型半導体装置 |
JPS5884461A (ja) * | 1981-11-13 | 1983-05-20 | Hitachi Ltd | 絶縁ゲ−ト型半導体装置 |
JPS5887873A (ja) * | 1981-11-20 | 1983-05-25 | Hitachi Ltd | 絶縁ゲ−ト形半導体装置 |
JPS59161836A (ja) * | 1983-03-04 | 1984-09-12 | Sanyo Electric Co Ltd | 半導体装置 |
JPS61292965A (ja) * | 1985-06-21 | 1986-12-23 | Hitachi Ltd | 半導体集積回路装置 |
JPH0693485B2 (ja) * | 1985-11-29 | 1994-11-16 | 日本電装株式会社 | 半導体装置 |
US4709253A (en) * | 1986-05-02 | 1987-11-24 | Amp Incorporated | Surface mountable diode |
-
1988
- 1988-12-27 DE DE3855533T patent/DE3855533T2/de not_active Expired - Fee Related
- 1988-12-27 EP EP88121721A patent/EP0322860B1/de not_active Expired - Lifetime
- 1988-12-28 US US07/291,463 patent/US5012313A/en not_active Expired - Fee Related
- 1988-12-28 KR KR1019880017634A patent/KR910009041B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0322860A3 (de) | 1990-10-17 |
EP0322860B1 (de) | 1996-09-11 |
KR910009041B1 (ko) | 1991-10-28 |
KR890011117A (ko) | 1989-08-12 |
US5012313A (en) | 1991-04-30 |
EP0322860A2 (de) | 1989-07-05 |
DE3855533D1 (de) | 1996-10-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |