NL189163B - Prom-halfgeleiderelement. - Google Patents

Prom-halfgeleiderelement.

Info

Publication number
NL189163B
NL189163B NLAANVRAGE8104364,A NL8104364A NL189163B NL 189163 B NL189163 B NL 189163B NL 8104364 A NL8104364 A NL 8104364A NL 189163 B NL189163 B NL 189163B
Authority
NL
Netherlands
Prior art keywords
semiconductor element
prom
prom semiconductor
semiconductor
Prior art date
Application number
NLAANVRAGE8104364,A
Other languages
English (en)
Other versions
NL189163C (nl
NL8104364A (nl
Original Assignee
Nippon Telegraph & Telephone
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP13326080A external-priority patent/JPS5758354A/ja
Priority claimed from JP55162565A external-priority patent/JPS5834948B2/ja
Application filed by Nippon Telegraph & Telephone filed Critical Nippon Telegraph & Telephone
Publication of NL8104364A publication Critical patent/NL8104364A/nl
Publication of NL189163B publication Critical patent/NL189163B/nl
Application granted granted Critical
Publication of NL189163C publication Critical patent/NL189163C/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/926—Elongated lead extending axially through another elongated lead

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
NLAANVRAGE8104364,A 1980-09-24 1981-09-23 Prom-halfgeleiderelement. NL189163C (nl)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP13326080 1980-09-24
JP13326080A JPS5758354A (en) 1980-09-24 1980-09-24 Semiconductor device
JP16256580 1980-11-20
JP55162565A JPS5834948B2 (ja) 1980-11-20 1980-11-20 半導体記憶装置

Publications (3)

Publication Number Publication Date
NL8104364A NL8104364A (nl) 1982-04-16
NL189163B true NL189163B (nl) 1992-08-17
NL189163C NL189163C (nl) 1993-01-18

Family

ID=26467656

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE8104364,A NL189163C (nl) 1980-09-24 1981-09-23 Prom-halfgeleiderelement.

Country Status (6)

Country Link
US (1) US4538167A (nl)
CA (1) CA1177957A (nl)
DE (1) DE3137730C2 (nl)
FR (1) FR2490860B1 (nl)
GB (1) GB2086653B (nl)
NL (1) NL189163C (nl)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4903094A (en) * 1986-08-26 1990-02-20 General Electric Company Memory cell structure having radiation hardness
JPS63312674A (ja) * 1987-06-16 1988-12-21 Nissan Motor Co Ltd 薄膜半導体装置
EP0322860B1 (en) * 1987-12-28 1996-09-11 Fuji Electric Co., Ltd. Insulated gate semiconductor device
JPH01187837A (ja) * 1988-01-22 1989-07-27 Agency Of Ind Science & Technol 半導体集積回路
JPH07109906B2 (ja) * 1988-03-03 1995-11-22 松下電器産業株式会社 超伝導トランジスタ回路
US5773151A (en) * 1995-06-30 1998-06-30 Harris Corporation Semi-insulating wafer
US5793094A (en) * 1995-12-28 1998-08-11 Vlsi Technology, Inc. Methods for fabricating anti-fuse structures
US5789795A (en) * 1995-12-28 1998-08-04 Vlsi Technology, Inc. Methods and apparatus for fabricationg anti-fuse devices
US5783467A (en) * 1995-12-29 1998-07-21 Vlsi Technology, Inc. Method of making antifuse structures using implantation of both neutral and dopant species
US5723358A (en) * 1996-04-29 1998-03-03 Vlsi Technology, Inc. Method of manufacturing amorphous silicon antifuse structures
US5847441A (en) * 1996-05-10 1998-12-08 Micron Technology, Inc. Semiconductor junction antifuse circuit
US5753540A (en) * 1996-08-20 1998-05-19 Vlsi Technology, Inc. Apparatus and method for programming antifuse structures
US5899707A (en) * 1996-08-20 1999-05-04 Vlsi Technology, Inc. Method for making doped antifuse structures
US5764563A (en) * 1996-09-30 1998-06-09 Vlsi Technology, Inc. Thin film load structure
US7145255B2 (en) * 2004-08-26 2006-12-05 Micrel, Incorporated Lateral programmable polysilicon structure incorporating polysilicon blocking diode

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1524879A1 (de) * 1967-11-09 1970-11-26 Ibm Deutschland Festwertspeicher fuer Datenverarbeitungsanlagen
DE2023219C3 (de) * 1970-05-12 1979-09-06 Siemens Ag, 1000 Berlin Und 8000 Muenchen Programmierbarer Halbleiter-Festwertspeicher
US3848238A (en) * 1970-07-13 1974-11-12 Intersil Inc Double junction read only memory
US3787717A (en) * 1971-12-09 1974-01-22 Ibm Over voltage protection circuit lateral bipolar transistor with gated collector junction
DE2531846C2 (de) * 1974-07-16 1989-12-14 Nippon Electric Co., Ltd., Tokyo Schutzschaltungsanordnung für einen Isolierschicht-Feldeffekttransistor
FR2334170A1 (fr) * 1975-12-05 1977-07-01 Honeywell Bull Soc Ind Memoire morte integree
US4037140A (en) * 1976-04-14 1977-07-19 Rca Corporation Protection circuit for insulated-gate field-effect transistors (IGFETS)
US4145702A (en) * 1977-07-05 1979-03-20 Burroughs Corporation Electrically programmable read-only-memory device
FR2404895A1 (fr) * 1977-09-30 1979-04-27 Radiotechnique Compelec Cellule de memoire programmable a diodes semiconductrices
CA1135854A (en) * 1977-09-30 1982-11-16 Michel Moussie Programmable read only memory cell
JPS607388B2 (ja) * 1978-09-08 1985-02-23 富士通株式会社 半導体記憶装置
JPS55140265A (en) * 1979-04-13 1980-11-01 Fujitsu Ltd Semiconductor memory device and method of fabricating the same

Also Published As

Publication number Publication date
FR2490860A1 (fr) 1982-03-26
DE3137730C2 (de) 1986-02-13
FR2490860B1 (fr) 1986-11-28
CA1177957A (en) 1984-11-13
NL189163C (nl) 1993-01-18
US4538167A (en) 1985-08-27
GB2086653A (en) 1982-05-12
DE3137730A1 (de) 1982-04-29
NL8104364A (nl) 1982-04-16
GB2086653B (en) 1984-07-18

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Legal Events

Date Code Title Description
A1A A request for search or an international-type search has been filed
BB A search report has been drawn up
A85 Still pending on 85-01-01
CNR Transfer of rights (patent application after its laying open for public inspection)

Free format text: NIPPON TELEGRAPH AND TELEPHONE CORPORATION

BC A request for examination has been filed
V4 Discontinued because of reaching the maximum lifetime of a patent

Free format text: 20010923