NL7808060A - Halfgeleiderelement. - Google Patents
Halfgeleiderelement.Info
- Publication number
- NL7808060A NL7808060A NL787808060A NL7808060A NL7808060A NL 7808060 A NL7808060 A NL 7808060A NL 787808060 A NL787808060 A NL 787808060A NL 7808060 A NL7808060 A NL 7808060A NL 7808060 A NL7808060 A NL 7808060A
- Authority
- NL
- Netherlands
- Prior art keywords
- semiconductor element
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52095045A JPS5910587B2 (ja) | 1977-08-10 | 1977-08-10 | 半導体装置の保護装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7808060A true NL7808060A (nl) | 1979-02-13 |
Family
ID=14127088
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL787808060A NL7808060A (nl) | 1977-08-10 | 1978-07-31 | Halfgeleiderelement. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4261004A (nl) |
JP (1) | JPS5910587B2 (nl) |
DE (1) | DE2834759C2 (nl) |
NL (1) | NL7808060A (nl) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55134976A (en) * | 1979-04-09 | 1980-10-21 | Nec Corp | Semiconductor device |
JPS5737876A (en) * | 1980-08-20 | 1982-03-02 | Hitachi Ltd | Semiconductor integrated circuit apparatus |
JPS5825264A (ja) * | 1981-08-07 | 1983-02-15 | Hitachi Ltd | 絶縁ゲート型半導体装置 |
JPS5856355A (ja) * | 1981-09-30 | 1983-04-04 | Hitachi Ltd | 半導体集積回路装置 |
US4599639A (en) * | 1982-04-19 | 1986-07-08 | Texas Instruments Incorporated | Process protection for individual device gates on large area MIS devices |
DE3334167A1 (de) * | 1983-09-21 | 1985-04-04 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterdiode |
JPS60152055A (ja) * | 1984-01-20 | 1985-08-10 | Matsushita Electric Ind Co Ltd | 相補型mos半導体装置 |
US4757363A (en) * | 1984-09-14 | 1988-07-12 | Harris Corporation | ESD protection network for IGFET circuits with SCR prevention guard rings |
JPS61185962A (ja) * | 1985-02-13 | 1986-08-19 | Nec Corp | 相補型mos集積回路 |
US5136348A (en) * | 1986-10-08 | 1992-08-04 | Nippondenso Co., Ltd. | Structure and manufacturing method for thin-film semiconductor diode device |
JP2545527B2 (ja) * | 1987-01-23 | 1996-10-23 | 沖電気工業株式会社 | 半導体装置 |
US5214497A (en) * | 1988-05-25 | 1993-05-25 | Hitachi, Ltd. | Polycrystalline silicon resistor for use in a semiconductor integrated circuit having a memory device |
DE4308624A1 (de) * | 1993-03-18 | 1994-09-22 | Abb Management Ag | MOS-gesteuertes Leistungshalbleiterbauelement |
JP4535668B2 (ja) * | 2002-09-09 | 2010-09-01 | 三洋電機株式会社 | 半導体装置 |
JP4804754B2 (ja) | 2002-09-09 | 2011-11-02 | オンセミコンダクター・トレーディング・リミテッド | 保護素子 |
US7199446B1 (en) * | 2003-02-18 | 2007-04-03 | K2 Optronics, Inc. | Stacked electrical resistor pad for optical fiber attachment |
JP4939749B2 (ja) | 2004-12-22 | 2012-05-30 | オンセミコンダクター・トレーディング・リミテッド | 化合物半導体スイッチ回路装置 |
JP4939750B2 (ja) * | 2004-12-22 | 2012-05-30 | オンセミコンダクター・トレーディング・リミテッド | 化合物半導体スイッチ回路装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1803392A1 (de) * | 1968-10-16 | 1970-06-18 | Siemens Ag | Schutzvorrichtung fuer einen Feldeffekttransistor |
US3739238A (en) * | 1969-09-24 | 1973-06-12 | Tokyo Shibaura Electric Co | Semiconductor device with a field effect transistor |
JPS5513433B2 (nl) * | 1974-08-29 | 1980-04-09 | ||
US4110776A (en) * | 1976-09-27 | 1978-08-29 | Texas Instruments Incorporated | Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer |
-
1977
- 1977-08-10 JP JP52095045A patent/JPS5910587B2/ja not_active Expired
-
1978
- 1978-07-31 NL NL787808060A patent/NL7808060A/nl not_active Application Discontinuation
- 1978-08-01 US US05/929,959 patent/US4261004A/en not_active Expired - Lifetime
- 1978-08-08 DE DE2834759A patent/DE2834759C2/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5910587B2 (ja) | 1984-03-09 |
JPS5429984A (en) | 1979-03-06 |
US4261004A (en) | 1981-04-07 |
DE2834759C2 (de) | 1983-11-03 |
DE2834759A1 (de) | 1979-02-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BB | A search report has been drawn up | ||
A85 | Still pending on 85-01-01 | ||
BC | A request for examination has been filed | ||
BV | The patent application has lapsed |