NL7801879A - Halfgeleidergeheugen. - Google Patents
Halfgeleidergeheugen.Info
- Publication number
- NL7801879A NL7801879A NL7801879A NL7801879A NL7801879A NL 7801879 A NL7801879 A NL 7801879A NL 7801879 A NL7801879 A NL 7801879A NL 7801879 A NL7801879 A NL 7801879A NL 7801879 A NL7801879 A NL 7801879A
- Authority
- NL
- Netherlands
- Prior art keywords
- semiconductor memory
- semiconductor
- memory
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
- G11C13/047—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using electro-optical elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7841—Field effect transistors with field effect produced by an insulated gate with floating body, e.g. programmable transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/10—DRAM devices comprising bipolar components
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL9500518A NL9500518A (nl) | 1977-02-21 | 1995-03-16 | Halfgeleidergeheugenschakeling. |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1846577A JPS53103330A (en) | 1977-02-21 | 1977-02-21 | Semiconductor memory |
JP52020653A JPS5852348B2 (ja) | 1977-02-26 | 1977-02-26 | 半導体メモリ |
JP52035956A JPS5837995B2 (ja) | 1977-03-30 | 1977-03-30 | 半導体メモリ |
JP3630477A JPS53121528A (en) | 1977-03-31 | 1977-03-31 | Semiconductor memory |
JP3790577A JPS53123040A (en) | 1977-04-02 | 1977-04-02 | Semiconductor memory |
JP8322677A JPS5418284A (en) | 1977-07-11 | 1977-07-11 | Semiconductor memory |
Publications (3)
Publication Number | Publication Date |
---|---|
NL7801879A true NL7801879A (nl) | 1978-08-23 |
NL191683B NL191683B (nl) | 1995-10-02 |
NL191683C NL191683C (nl) | 1996-02-05 |
Family
ID=27548791
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7801879A NL191683C (nl) | 1977-02-21 | 1978-02-20 | Halfgeleidergeheugenschakeling. |
Country Status (5)
Country | Link |
---|---|
US (3) | US4434433A (nl) |
DE (1) | DE2807181C2 (nl) |
FR (1) | FR2381373B1 (nl) |
GB (1) | GB1602361A (nl) |
NL (1) | NL191683C (nl) |
Families Citing this family (61)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5808328A (en) * | 1977-02-21 | 1998-09-15 | Zaidan Hojin Handotai Kenkyu Shinkokai | High-speed and high-density semiconductor memory |
GB1602984A (en) * | 1977-05-15 | 1981-11-18 | Zaidan Hojin Handotai Kenkyu | Integrated semiconductor circuit |
US4284997A (en) * | 1977-07-07 | 1981-08-18 | Zaidan Hojin Handotai Kenkyu Shinkokai | Static induction transistor and its applied devices |
JPS5466080A (en) * | 1977-11-05 | 1979-05-28 | Nippon Gakki Seizo Kk | Semiconductor device |
JPS54145486A (en) * | 1978-05-08 | 1979-11-13 | Handotai Kenkyu Shinkokai | Gaas semiconductor device |
JPS5599765A (en) * | 1979-01-25 | 1980-07-30 | Nec Corp | Mos memory device |
JPS55115355A (en) * | 1979-02-28 | 1980-09-05 | Nec Corp | Mos type memory |
DE3065928D1 (en) * | 1979-01-25 | 1984-01-26 | Nec Corp | Semiconductor memory device |
JPS55103756A (en) * | 1979-01-31 | 1980-08-08 | Semiconductor Res Found | Electrostatic induction transistor integrated circuit |
FR2480505A1 (fr) * | 1980-04-14 | 1981-10-16 | Thomson Csf | Transistor a effet de champ a jonction de puissance a fonctionnement vertical et procede de fabrication |
FR2480502A1 (fr) * | 1980-04-14 | 1981-10-16 | Thomson Csf | Dispositif semi-conducteur a grille profonde, son application a une diode blocable, et procede de fabrication |
FR2480501A1 (fr) * | 1980-04-14 | 1981-10-16 | Thomson Csf | Dispositif semi-conducteur a grille profonde accessible par la surface et procede de fabrication |
EP0055110A3 (en) * | 1980-12-22 | 1984-11-14 | Texas Instruments Incorporated | Nonvolatile high density jfet ram cell |
JPS57173978A (en) * | 1981-04-21 | 1982-10-26 | Nippon Gakki Seizo Kk | Integrated circuit device |
NL8103376A (nl) * | 1981-07-16 | 1983-02-16 | Philips Nv | Weergeefinrichting. |
US4624046A (en) * | 1982-01-04 | 1986-11-25 | Fairchild Camera & Instrument Corp. | Oxide isolation process for standard RAM/PROM and lateral PNP cell RAM |
JPS58154256A (ja) * | 1982-03-10 | 1983-09-13 | Hitachi Ltd | 半導体装置 |
US4528745A (en) * | 1982-07-13 | 1985-07-16 | Toyo Denki Seizo Kabushiki Kaisha | Method for the formation of buried gates of a semiconductor device utilizing etch and refill techniques |
DE3467953D1 (en) * | 1983-04-21 | 1988-01-14 | Toshiba Kk | Semiconductor device having an element isolation layer and method of manufacturing the same |
KR920010461B1 (ko) * | 1983-09-28 | 1992-11-28 | 가부시끼가이샤 히다찌세이사꾸쇼 | 반도체 메모리와 그 제조 방법 |
USRE33261E (en) * | 1984-07-03 | 1990-07-10 | Texas Instruments, Incorporated | Trench capacitor for high density dynamic RAM |
JPS6147662A (ja) * | 1984-08-15 | 1986-03-08 | Olympus Optical Co Ltd | 固体撮像装置 |
US5208657A (en) * | 1984-08-31 | 1993-05-04 | Texas Instruments Incorporated | DRAM Cell with trench capacitor and vertical channel in substrate |
JPH0793365B2 (ja) * | 1984-09-11 | 1995-10-09 | 株式会社東芝 | 半導体記憶装置およびその製造方法 |
US4824793A (en) * | 1984-09-27 | 1989-04-25 | Texas Instruments Incorporated | Method of making DRAM cell with trench capacitor |
US5225697A (en) * | 1984-09-27 | 1993-07-06 | Texas Instruments, Incorporated | dRAM cell and method |
US5102817A (en) * | 1985-03-21 | 1992-04-07 | Texas Instruments Incorporated | Vertical DRAM cell and method |
JPS62114265A (ja) * | 1985-11-13 | 1987-05-26 | Mitsubishi Electric Corp | 半導体記憶装置 |
JPS62219966A (ja) * | 1986-03-22 | 1987-09-28 | Toshiba Corp | 半導体装置 |
US4829017A (en) * | 1986-09-25 | 1989-05-09 | Texas Instruments Incorporated | Method for lubricating a high capacity dram cell |
US4786958A (en) * | 1986-11-17 | 1988-11-22 | General Motors Corporation | Lateral dual gate thyristor and method of fabricating same |
US5109259A (en) * | 1987-09-22 | 1992-04-28 | Texas Instruments Incorporated | Multiple DRAM cells in a trench |
US4861731A (en) * | 1988-02-02 | 1989-08-29 | General Motors Corporation | Method of fabricating a lateral dual gate thyristor |
JP2655859B2 (ja) * | 1988-02-03 | 1997-09-24 | 株式会社日立製作所 | 半導体記憶装置 |
US5103276A (en) * | 1988-06-01 | 1992-04-07 | Texas Instruments Incorporated | High performance composed pillar dram cell |
US5225363A (en) * | 1988-06-28 | 1993-07-06 | Texas Instruments Incorporated | Trench capacitor DRAM cell and method of manufacture |
US5105245A (en) * | 1988-06-28 | 1992-04-14 | Texas Instruments Incorporated | Trench capacitor DRAM cell with diffused bit lines adjacent to a trench |
US4910709A (en) * | 1988-08-10 | 1990-03-20 | International Business Machines Corporation | Complementary metal-oxide-semiconductor transistor and one-capacitor dynamic-random-access memory cell |
US5051796A (en) * | 1988-11-10 | 1991-09-24 | Texas Instruments Incorporated | Cross-point contact-free array with a high-density floating-gate structure |
US5238855A (en) * | 1988-11-10 | 1993-08-24 | Texas Instruments Incorporated | Cross-point contact-free array with a high-density floating-gate structure |
US5850093A (en) * | 1989-11-20 | 1998-12-15 | Tarng; Huang Chang | Uni-directional flash device |
JP3469251B2 (ja) * | 1990-02-14 | 2003-11-25 | 株式会社東芝 | 半導体装置の製造方法 |
JP2563685B2 (ja) * | 1990-04-06 | 1996-12-11 | 松下電器産業株式会社 | 半導体装置 |
JPH04188869A (ja) * | 1990-11-22 | 1992-07-07 | Mitsubishi Electric Corp | 接合型電界効果トランジスタとキャパシタとを含む半導体記憶装置およびその製造方法 |
JP3202223B2 (ja) * | 1990-11-27 | 2001-08-27 | 日本電気株式会社 | トランジスタの製造方法 |
KR940002835B1 (ko) * | 1991-04-17 | 1994-04-04 | 재단법인 한국전자통신연구소 | 접합전계형 다이내믹 램을 제조하는 방법 및 그 다이내믹 램의 구조 |
US5208172A (en) * | 1992-03-02 | 1993-05-04 | Motorola, Inc. | Method for forming a raised vertical transistor |
JP3229012B2 (ja) * | 1992-05-21 | 2001-11-12 | 株式会社東芝 | 半導体装置の製造方法 |
BE1007475A3 (nl) * | 1993-09-06 | 1995-07-11 | Philips Electronics Nv | Halfgeleiderinrichting met een niet-vluchtig geheugen en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting. |
GB9421138D0 (en) * | 1994-10-20 | 1994-12-07 | Hitachi Europ Ltd | Memory device |
DE69602114T2 (de) * | 1995-02-10 | 1999-08-19 | Siliconix Inc. | Graben-Feldeffekttransistor mit PN-Verarmungsschicht-Barriere |
JPH11191596A (ja) * | 1997-04-02 | 1999-07-13 | Sony Corp | 半導体メモリセル及びその製造方法 |
US6204529B1 (en) * | 1999-08-27 | 2001-03-20 | Hsing Lan Lung | 8 bit per cell non-volatile semiconductor memory structure utilizing trench technology and dielectric floating gate |
US6507063B2 (en) * | 2000-04-17 | 2003-01-14 | International Business Machines Corporation | Poly-poly/MOS capacitor having a gate encapsulating first electrode layer |
JP4226205B2 (ja) * | 2000-08-11 | 2009-02-18 | 富士雄 舛岡 | 半導体記憶装置の製造方法 |
US6784483B2 (en) * | 2002-09-04 | 2004-08-31 | Macronix International Co., Ltd. | Method for preventing hole and electron movement in NROM devices |
JP2004111478A (ja) * | 2002-09-13 | 2004-04-08 | Sharp Corp | 不揮発性半導体記憶装置およびその製造方法 |
US6887768B1 (en) * | 2003-05-15 | 2005-05-03 | Lovoltech, Inc. | Method and structure for composite trench fill |
US7288809B1 (en) * | 2003-12-16 | 2007-10-30 | Spansion Llc | Flash memory with buried bit lines |
US7315474B2 (en) * | 2005-01-03 | 2008-01-01 | Macronix International Co., Ltd | Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays |
DE102011003456A1 (de) * | 2011-02-01 | 2012-08-02 | Robert Bosch Gmbh | Halbleiteranordnung mit reduziertem Einschaltwiderstand |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2930950A (en) * | 1956-12-10 | 1960-03-29 | Teszner Stanislas | High power field-effect transistor |
DE1514431C3 (de) * | 1965-04-07 | 1974-08-22 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Halbleiteranordnung mit pn-Übergang zur Verwendung als spannungsabhängige Kapazität |
US3428875A (en) * | 1966-10-03 | 1969-02-18 | Fairchild Camera Instr Co | Variable threshold insulated gate field effect device |
US3387286A (en) * | 1967-07-14 | 1968-06-04 | Ibm | Field-effect transistor memory |
JPS4844585B1 (nl) * | 1969-04-12 | 1973-12-25 | ||
US3676715A (en) * | 1970-06-26 | 1972-07-11 | Bell Telephone Labor Inc | Semiconductor apparatus for image sensing and dynamic storage |
US3720922A (en) * | 1971-03-17 | 1973-03-13 | Rca Corp | Charge coupled memory |
US4014036A (en) * | 1971-07-06 | 1977-03-22 | Ibm Corporation | Single-electrode charge-coupled random access memory cell |
US3740621A (en) * | 1971-08-30 | 1973-06-19 | Rca Corp | Transistor employing variable resistance ballasting means dependent on the magnitude of the emitter current |
BE789501A (fr) * | 1971-09-30 | 1973-03-29 | Siemens Ag | Condensateur electrique dans un circuit integre, utilise notamment comme memoire pour une memoire a semiconducteur |
DE2333400C2 (de) * | 1972-06-30 | 1982-05-13 | Sony Corp., Tokyo | Sperrschicht-Feldeffekttransistor |
US3876992A (en) * | 1972-11-01 | 1975-04-08 | Ibm | Bipolar transistor memory with capacitive storage |
US3811076A (en) * | 1973-01-02 | 1974-05-14 | Ibm | Field effect transistor integrated circuit and memory |
US3982264A (en) * | 1973-04-25 | 1976-09-21 | Sony Corporation | Junction gated field effect transistor |
JPS5066184A (nl) * | 1973-10-12 | 1975-06-04 | ||
US3978459A (en) * | 1975-04-21 | 1976-08-31 | Intel Corporation | High density mos memory array |
US4012757A (en) * | 1975-05-05 | 1977-03-15 | Intel Corporation | Contactless random-access memory cell and cell pair |
US4000413A (en) * | 1975-05-27 | 1976-12-28 | Intel Corporation | Mos-ram |
US3986180A (en) * | 1975-09-22 | 1976-10-12 | International Business Machines Corporation | Depletion mode field effect transistor memory system |
US4003036A (en) * | 1975-10-23 | 1977-01-11 | American Micro-Systems, Inc. | Single IGFET memory cell with buried storage element |
US4115914A (en) * | 1976-03-26 | 1978-09-26 | Hughes Aircraft Company | Electrically erasable non-volatile semiconductor memory |
US4064492A (en) * | 1976-10-05 | 1977-12-20 | Schuermeyer Fritz L | Virtually nonvolatile random access memory cell |
US4187602A (en) * | 1976-12-27 | 1980-02-12 | Texas Instruments Incorporated | Static memory cell using field implanted resistance |
NL7700879A (nl) * | 1977-01-28 | 1978-08-01 | Philips Nv | Halfgeleiderinrichting. |
NL7701172A (nl) * | 1977-02-04 | 1978-08-08 | Philips Nv | Halfgeleidergeheugeninrichting. |
US4135289A (en) * | 1977-08-23 | 1979-01-23 | Bell Telephone Laboratories, Incorporated | Method for producing a buried junction memory device |
US4471368A (en) * | 1977-10-13 | 1984-09-11 | Mohsen Amr M | Dynamic RAM memory and vertical charge coupled dynamic storage cell therefor |
US4245231A (en) * | 1978-12-26 | 1981-01-13 | Motorola Inc. | Combination capacitor and transistor structure for use in monolithic circuits |
US4364075A (en) * | 1980-09-02 | 1982-12-14 | Intel Corporation | CMOS Dynamic RAM cell and method of fabrication |
JPS6058781A (ja) * | 1983-09-09 | 1985-04-04 | Olympus Optical Co Ltd | 固体撮像装置 |
US4791611A (en) * | 1985-09-11 | 1988-12-13 | University Of Waterloo | VLSI dynamic memory |
US4864374A (en) * | 1987-11-30 | 1989-09-05 | Texas Instruments Incorporated | Two-transistor dram cell with high alpha particle immunity |
-
1978
- 1978-02-20 DE DE2807181A patent/DE2807181C2/de not_active Expired
- 1978-02-20 NL NL7801879A patent/NL191683C/nl not_active IP Right Cessation
- 1978-02-20 GB GB6699/78A patent/GB1602361A/en not_active Expired
- 1978-02-21 FR FR7804914A patent/FR2381373B1/fr not_active Expired
-
1980
- 1980-08-04 US US06/174,724 patent/US4434433A/en not_active Expired - Lifetime
-
1987
- 1987-08-17 US US07/087,974 patent/US4994999A/en not_active Expired - Lifetime
-
1992
- 1992-02-24 US US07/839,704 patent/US5883406A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5883406A (en) | 1999-03-16 |
DE2807181A1 (de) | 1978-08-31 |
US4434433A (en) | 1984-02-28 |
NL191683B (nl) | 1995-10-02 |
FR2381373A1 (fr) | 1978-09-15 |
DE2807181C2 (de) | 1985-11-28 |
NL191683C (nl) | 1996-02-05 |
GB1602361A (en) | 1981-11-11 |
US4994999A (en) | 1991-02-19 |
FR2381373B1 (fr) | 1987-11-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BB | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
A85 | Still pending on 85-01-01 | ||
V4 | Discontinued because of reaching the maximum lifetime of a patent |
Free format text: 980220 |