NL179244C - Halfgeleidergeheugen. - Google Patents
Halfgeleidergeheugen.Info
- Publication number
- NL179244C NL179244C NLAANVRAGE7714013,A NL7714013A NL179244C NL 179244 C NL179244 C NL 179244C NL 7714013 A NL7714013 A NL 7714013A NL 179244 C NL179244 C NL 179244C
- Authority
- NL
- Netherlands
- Prior art keywords
- semiconductor memory
- semiconductor
- memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
- G11C11/415—Address circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
- G11C11/416—Read-write [R-W] circuits
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15094376A JPS5375828A (en) | 1976-12-17 | 1976-12-17 | Semiconductor circuit |
Publications (3)
Publication Number | Publication Date |
---|---|
NL7714013A NL7714013A (nl) | 1978-06-20 |
NL179244B NL179244B (nl) | 1986-03-03 |
NL179244C true NL179244C (nl) | 1986-08-01 |
Family
ID=15507795
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NLAANVRAGE7714013,A NL179244C (nl) | 1976-12-17 | 1977-12-16 | Halfgeleidergeheugen. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4164791A (nl) |
JP (1) | JPS5375828A (nl) |
DE (1) | DE2756267C3 (nl) |
NL (1) | NL179244C (nl) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2738187C2 (de) * | 1977-08-24 | 1979-02-15 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Schaltungsanordnung für mehrere auf einem Bipolar-Baustein angeordnete Speicherzellen mit einer Regelschaltung zur Kennlinien-Anpassung der Speicherzellen |
EP0006753B1 (en) * | 1978-06-30 | 1983-02-16 | Fujitsu Limited | Semiconductor integrated circuit device |
FR2443118A1 (fr) * | 1978-11-30 | 1980-06-27 | Ibm France | Dispositif pour l'alimentation des memoires monolithiques |
JPS5833634B2 (ja) * | 1979-02-28 | 1983-07-21 | 富士通株式会社 | メモリセルアレイの駆動方式 |
JPS5831673B2 (ja) * | 1979-08-22 | 1983-07-07 | 富士通株式会社 | 半導体記憶装置 |
JPS5637884A (en) * | 1979-08-30 | 1981-04-11 | Fujitsu Ltd | Terminating circuit for word selective signal line of semiconductor memory unit |
JPS608554B2 (ja) * | 1979-12-27 | 1985-03-04 | 富士通株式会社 | メモリ装置 |
US4348596A (en) * | 1979-12-27 | 1982-09-07 | Rca Corporation | Signal comparison circuit |
DE3004565C2 (de) * | 1980-02-07 | 1984-06-14 | Siemens AG, 1000 Berlin und 8000 München | Integrierte digitale Halbleiterschaltung |
JPS6010400B2 (ja) * | 1980-10-09 | 1985-03-16 | 富士通株式会社 | 半導体集積回路装置 |
JPS5841596B2 (ja) * | 1980-11-28 | 1983-09-13 | 富士通株式会社 | スタティック型半導体記憶装置 |
US4460984A (en) * | 1981-12-30 | 1984-07-17 | International Business Machines Corporation | Memory array with switchable upper and lower word lines |
US4618945A (en) * | 1982-08-11 | 1986-10-21 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor memory device |
JPS5891600A (ja) * | 1982-11-19 | 1983-05-31 | Hitachi Ltd | メモリ回路 |
JPS613390A (ja) * | 1984-06-15 | 1986-01-09 | Hitachi Ltd | 記憶装置 |
GB2176357B (en) * | 1985-06-12 | 1989-07-12 | Stc Plc | Improvements in semiconductor memories |
JPS62164295A (ja) * | 1986-01-16 | 1987-07-20 | Hitachi Ltd | 半導体記憶装置 |
US7855748B2 (en) * | 2007-12-03 | 2010-12-21 | Altasens, Inc. | Reference voltage generation in imaging sensors |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2129166B2 (de) * | 1970-06-12 | 1974-03-28 | Hitachi Ltd., Tokio | Halbleiterspeicher |
US3725878A (en) * | 1970-10-30 | 1973-04-03 | Ibm | Memory cell circuit |
US4078261A (en) * | 1976-01-02 | 1978-03-07 | Motorola, Inc. | Sense/write circuits for bipolar random access memory |
-
1976
- 1976-12-17 JP JP15094376A patent/JPS5375828A/ja active Granted
-
1977
- 1977-12-13 US US05/860,092 patent/US4164791A/en not_active Expired - Lifetime
- 1977-12-16 DE DE2756267A patent/DE2756267C3/de not_active Expired
- 1977-12-16 NL NLAANVRAGE7714013,A patent/NL179244C/nl not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE2756267C3 (de) | 1986-10-02 |
DE2756267A1 (de) | 1978-06-22 |
JPS5727552B2 (nl) | 1982-06-11 |
US4164791A (en) | 1979-08-14 |
DE2756267B2 (nl) | 1979-06-28 |
NL7714013A (nl) | 1978-06-20 |
JPS5375828A (en) | 1978-07-05 |
NL179244B (nl) | 1986-03-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
NL7707297A (nl) | Halfgeleider-geheugeninrichting. | |
NL7801879A (nl) | Halfgeleidergeheugen. | |
NL7806183A (nl) | Halfgeleidergeheugen. | |
NL7500550A (nl) | Halfgeleider-geheugeninrichting. | |
NL7614537A (nl) | Halfgeleidergeheugeninrichting. | |
NL7712341A (nl) | Geheugenstelsel. | |
NL7713945A (nl) | Schijvengeheugen. | |
NL178729C (nl) | Halfgeleidergeheugen. | |
NL7704864A (nl) | Halfgeleidergeheugen. | |
NL7709931A (nl) | Halfgeleider-geheugeninrichting. | |
NL173572C (nl) | Halfgeleiderinrichting. | |
NL7711664A (nl) | Halfgeleiderlaser. | |
NL171760C (nl) | Halfgeleiderlaser. | |
NL7711511A (nl) | Geheugenschijf. | |
NL179244C (nl) | Halfgeleidergeheugen. | |
NL190211C (nl) | Dynamische halfgeleidergeheugeninrichting. | |
DE3072204D1 (de) | Halbleiterspeicheranordnung. | |
NL7607984A (nl) | Halfgeleidergeheugen. | |
NL7710360A (nl) | Halfgeleidergeheugen. | |
NL7712819A (nl) | Dynamische geheugeninrichting. | |
DD130698A5 (de) | Halbleiterspeicher | |
NL7701172A (nl) | Halfgeleidergeheugeninrichting. | |
NL7710333A (nl) | Geheugeninrichting. | |
NL7807820A (nl) | Halfgeleider-geheugeninrichting. | |
NL7709822A (nl) | Geheugencel. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A85 | Still pending on 85-01-01 | ||
V1 | Lapsed because of non-payment of the annual fee |
Effective date: 19950701 |