NL7709931A - Halfgeleider-geheugeninrichting. - Google Patents

Halfgeleider-geheugeninrichting.

Info

Publication number
NL7709931A
NL7709931A NL7709931A NL7709931A NL7709931A NL 7709931 A NL7709931 A NL 7709931A NL 7709931 A NL7709931 A NL 7709931A NL 7709931 A NL7709931 A NL 7709931A NL 7709931 A NL7709931 A NL 7709931A
Authority
NL
Netherlands
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Application number
NL7709931A
Other languages
English (en)
Other versions
NL178369C (nl
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of NL7709931A publication Critical patent/NL7709931A/nl
Application granted granted Critical
Publication of NL178369C publication Critical patent/NL178369C/nl

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
NLAANVRAGE7709931,A 1976-09-10 1977-09-09 Geheugeninrichting. NL178369C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10779276A JPS5333542A (en) 1976-09-10 1976-09-10 Signal detection circuit

Publications (2)

Publication Number Publication Date
NL7709931A true NL7709931A (nl) 1978-03-14
NL178369C NL178369C (nl) 1986-03-03

Family

ID=14468134

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7709931,A NL178369C (nl) 1976-09-10 1977-09-09 Geheugeninrichting.

Country Status (4)

Country Link
US (1) US4112508A (nl)
JP (1) JPS5333542A (nl)
DE (1) DE2740700A1 (nl)
NL (1) NL178369C (nl)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6041463B2 (ja) * 1976-11-19 1985-09-17 株式会社日立製作所 ダイナミツク記憶装置
JPS5399736A (en) * 1977-02-10 1978-08-31 Toshiba Corp Semiconductor memory unit
DE2935121A1 (de) * 1978-09-07 1980-03-27 Texas Instruments Inc Schreib/lese-halbleiterspeicher
JPS5575899U (nl) * 1978-11-20 1980-05-24
JPS5847796B2 (ja) * 1979-05-26 1983-10-25 富士通株式会社 半導体メモリ装置
JPS5644189A (en) * 1979-09-19 1981-04-23 Hitachi Ltd Semiconductor memory
US4339766A (en) * 1979-10-11 1982-07-13 Texas Instruments Incorporated Dummy columns for reducing pattern sensitivity in MOS/LSI dynamic RAM
JPS6216039Y2 (nl) * 1980-11-11 1987-04-23
JPS58134794A (ja) * 1982-02-04 1983-08-11 Mitsubishi Electric Corp 感熱複写用インクシ−ト
US4503522A (en) * 1981-03-17 1985-03-05 Hitachi, Ltd. Dynamic type semiconductor monolithic memory
JPS57208691A (en) * 1981-06-15 1982-12-21 Mitsubishi Electric Corp Semiconductor memory
JPS5862893A (ja) * 1981-10-09 1983-04-14 Mitsubishi Electric Corp Ｍｏｓダイナミツクメモリ
JPS58140297A (ja) * 1982-02-15 1983-08-19 Mitsubishi Electric Corp 感熱複写シ−ト
JPS59178294A (ja) * 1983-03-29 1984-10-09 Matsushita Electric Ind Co Ltd 感熱記録用転写体
JPS6040294A (ja) * 1983-08-12 1985-03-02 Hitachi Chem Co Ltd 熱転写フィルム
JPS60135289A (ja) * 1983-12-23 1985-07-18 Konishiroku Photo Ind Co Ltd 感熱転写記録媒体
JPS61228993A (ja) * 1985-04-03 1986-10-13 Fuji Kagakushi Kogyo Co Ltd 熱溶融転写記録媒体
JPH0664907B2 (ja) * 1985-06-26 1994-08-22 株式会社日立製作所 ダイナミツク型ｒａｍ
JP2523925B2 (ja) * 1990-03-29 1996-08-14 株式会社東芝 半導体記憶装置
JPH03288399A (ja) * 1990-04-04 1991-12-18 Mitsubishi Electric Corp 半導体記憶装置
JP2718577B2 (ja) * 1991-03-15 1998-02-25 松下電器産業株式会社 ダイナミックｒａｍ
JP4737351B2 (ja) * 2000-08-07 2011-07-27 東洋製罐株式会社 容器口部及びキャップ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5327107B2 (nl) * 1973-09-28 1978-08-05

Also Published As

Publication number Publication date
DE2740700B2 (nl) 1979-05-17
NL178369C (nl) 1986-03-03
DE2740700C3 (nl) 1980-01-31
DE2740700A1 (de) 1978-03-23
JPS5333542A (en) 1978-03-29
JPS5627957B2 (nl) 1981-06-27
US4112508A (en) 1978-09-05

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Legal Events

Date Code Title Description
BC A request for examination has been filed
A85 Still pending on 85-01-01