NL7710360A - Halfgeleidergeheugen. - Google Patents
Halfgeleidergeheugen.Info
- Publication number
- NL7710360A NL7710360A NL7710360A NL7710360A NL7710360A NL 7710360 A NL7710360 A NL 7710360A NL 7710360 A NL7710360 A NL 7710360A NL 7710360 A NL7710360 A NL 7710360A NL 7710360 A NL7710360 A NL 7710360A
- Authority
- NL
- Netherlands
- Prior art keywords
- semiconductor memory
- semiconductor
- memory
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
- H01L27/0733—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with capacitors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/911—Light sensitive array adapted to be scanned by electron beam, e.g. vidicon device
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2642615A DE2642615C2 (de) | 1976-09-22 | 1976-09-22 | Halbleiterspeicher |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7710360A true NL7710360A (nl) | 1978-03-28 |
Family
ID=5988547
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7710360A NL7710360A (nl) | 1976-09-22 | 1977-09-21 | Halfgeleidergeheugen. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4126881A (nl) |
JP (1) | JPS6034818B2 (nl) |
DE (1) | DE2642615C2 (nl) |
GB (1) | GB1556559A (nl) |
NL (1) | NL7710360A (nl) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54154977A (en) * | 1978-05-29 | 1979-12-06 | Fujitsu Ltd | Semiconductor device and its manufacture |
NL184551C (nl) * | 1978-07-24 | 1989-08-16 | Philips Nv | Veldeffekttransistor met geisoleerde stuurelektrode. |
US4206005A (en) * | 1978-11-27 | 1980-06-03 | Xerox Corporation | Method of making split gate LSI VMOSFET |
US4263663A (en) * | 1979-03-19 | 1981-04-21 | Motorola, Inc. | VMOS ROM Array |
US4252579A (en) * | 1979-05-07 | 1981-02-24 | International Business Machines Corporation | Method for making single electrode U-MOSFET random access memory utilizing reactive ion etching and polycrystalline deposition |
US4234887A (en) * | 1979-05-24 | 1980-11-18 | International Business Machines Corporation | V-Groove charge-coupled device |
US4369564A (en) * | 1979-10-29 | 1983-01-25 | American Microsystems, Inc. | VMOS Memory cell and method for making same |
US4335450A (en) * | 1980-01-30 | 1982-06-15 | International Business Machines Corporation | Non-destructive read out field effect transistor memory cell system |
US4364074A (en) * | 1980-06-12 | 1982-12-14 | International Business Machines Corporation | V-MOS Device with self-aligned multiple electrodes |
NL8005673A (nl) * | 1980-10-15 | 1982-05-03 | Philips Nv | Veldeffecttransistor en werkwijze ter vervaardiging van een dergelijke veldeffecttransistor. |
DE3040873C2 (de) * | 1980-10-30 | 1984-02-23 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Feldeffekttransistor |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3533089A (en) * | 1969-05-16 | 1970-10-06 | Shell Oil Co | Single-rail mosfet memory with capacitive storage |
US4003036A (en) * | 1975-10-23 | 1977-01-11 | American Micro-Systems, Inc. | Single IGFET memory cell with buried storage element |
DE2619664A1 (de) | 1976-05-04 | 1977-11-10 | Siemens Ag | Halbleiterspeicherzelle |
-
1976
- 1976-09-22 DE DE2642615A patent/DE2642615C2/de not_active Expired
-
1977
- 1977-08-17 US US05/825,225 patent/US4126881A/en not_active Expired - Lifetime
- 1977-09-21 JP JP52113890A patent/JPS6034818B2/ja not_active Expired
- 1977-09-21 NL NL7710360A patent/NL7710360A/nl not_active Application Discontinuation
- 1977-09-21 GB GB39310/77A patent/GB1556559A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US4126881A (en) | 1978-11-21 |
DE2642615A1 (de) | 1978-03-23 |
DE2642615C2 (de) | 1986-04-24 |
JPS6034818B2 (ja) | 1985-08-10 |
GB1556559A (en) | 1979-11-28 |
JPS5339892A (en) | 1978-04-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
NL7707297A (nl) | Halfgeleider-geheugeninrichting. | |
NL7801879A (nl) | Halfgeleidergeheugen. | |
NL7806183A (nl) | Halfgeleidergeheugen. | |
NL7500550A (nl) | Halfgeleider-geheugeninrichting. | |
NL7614537A (nl) | Halfgeleidergeheugeninrichting. | |
NL7712341A (nl) | Geheugenstelsel. | |
NL7713945A (nl) | Schijvengeheugen. | |
NL178729C (nl) | Halfgeleidergeheugen. | |
NL7704864A (nl) | Halfgeleidergeheugen. | |
NL7709931A (nl) | Halfgeleider-geheugeninrichting. | |
NL173572C (nl) | Halfgeleiderinrichting. | |
NL7711664A (nl) | Halfgeleiderlaser. | |
NL171760C (nl) | Halfgeleiderlaser. | |
NL7711511A (nl) | Geheugenschijf. | |
NL179244C (nl) | Halfgeleidergeheugen. | |
NL190211C (nl) | Dynamische halfgeleidergeheugeninrichting. | |
DE3072204D1 (de) | Halbleiterspeicheranordnung. | |
NL7607984A (nl) | Halfgeleidergeheugen. | |
NL7710360A (nl) | Halfgeleidergeheugen. | |
NL7712819A (nl) | Dynamische geheugeninrichting. | |
DD130698A5 (de) | Halbleiterspeicher | |
NL7701172A (nl) | Halfgeleidergeheugeninrichting. | |
NL7704909A (nl) | Magnetisch geheugen. | |
NL7710333A (nl) | Geheugeninrichting. | |
NL7807820A (nl) | Halfgeleider-geheugeninrichting. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
BA | A request for search or an international-type search has been filed | ||
A85 | Still pending on 85-01-01 | ||
BB | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
BV | The patent application has lapsed |