NL7714013A - Halfgeleidergeheugen. - Google Patents

Halfgeleidergeheugen.

Info

Publication number
NL7714013A
NL7714013A NL7714013A NL7714013A NL7714013A NL 7714013 A NL7714013 A NL 7714013A NL 7714013 A NL7714013 A NL 7714013A NL 7714013 A NL7714013 A NL 7714013A NL 7714013 A NL7714013 A NL 7714013A
Authority
NL
Netherlands
Prior art keywords
semiconductor memory
semiconductor
memory
Prior art date
Application number
NL7714013A
Other languages
English (en)
Other versions
NL179244C (nl
NL179244B (nl
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of NL7714013A publication Critical patent/NL7714013A/nl
Publication of NL179244B publication Critical patent/NL179244B/nl
Application granted granted Critical
Publication of NL179244C publication Critical patent/NL179244C/nl

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/415—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/416—Read-write [R-W] circuits 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Logic Circuits (AREA)
NLAANVRAGE7714013,A 1976-12-17 1977-12-16 Halfgeleidergeheugen. NL179244C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15094376A JPS5375828A (en) 1976-12-17 1976-12-17 Semiconductor circuit

Publications (3)

Publication Number Publication Date
NL7714013A true NL7714013A (nl) 1978-06-20
NL179244B NL179244B (nl) 1986-03-03
NL179244C NL179244C (nl) 1986-08-01

Family

ID=15507795

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7714013,A NL179244C (nl) 1976-12-17 1977-12-16 Halfgeleidergeheugen.

Country Status (4)

Country Link
US (1) US4164791A (nl)
JP (1) JPS5375828A (nl)
DE (1) DE2756267C3 (nl)
NL (1) NL179244C (nl)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2406281A1 (fr) * 1977-08-24 1979-05-11 Siemens Ag Circuit de reglage pour l'adaptation de cellules de memoire dans des modules bipolaires
EP0019988A1 (en) * 1979-02-28 1980-12-10 Fujitsu Limited System for selecting word lines in a bipolar RAM

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2964801D1 (en) * 1978-06-30 1983-03-24 Fujitsu Ltd Semiconductor integrated circuit device
FR2443118A1 (fr) * 1978-11-30 1980-06-27 Ibm France Dispositif pour l'alimentation des memoires monolithiques
JPS5831673B2 (ja) * 1979-08-22 1983-07-07 富士通株式会社 半導体記憶装置
JPS5637884A (en) * 1979-08-30 1981-04-11 Fujitsu Ltd Terminating circuit for word selective signal line of semiconductor memory unit
US4348596A (en) * 1979-12-27 1982-09-07 Rca Corporation Signal comparison circuit
JPS608554B2 (ja) * 1979-12-27 1985-03-04 富士通株式会社 メモリ装置
DE3004565C2 (de) * 1980-02-07 1984-06-14 Siemens AG, 1000 Berlin und 8000 München Integrierte digitale Halbleiterschaltung
JPS6010400B2 (ja) * 1980-10-09 1985-03-16 富士通株式会社 半導体集積回路装置
JPS5841596B2 (ja) * 1980-11-28 1983-09-13 富士通株式会社 スタティック型半導体記憶装置
US4460984A (en) * 1981-12-30 1984-07-17 International Business Machines Corporation Memory array with switchable upper and lower word lines
US4618945A (en) * 1982-08-11 1986-10-21 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor memory device
JPS5891600A (ja) * 1982-11-19 1983-05-31 Hitachi Ltd メモリ回路
JPS613390A (ja) * 1984-06-15 1986-01-09 Hitachi Ltd 記憶装置
GB2176357B (en) * 1985-06-12 1989-07-12 Stc Plc Improvements in semiconductor memories
JPS62164295A (ja) * 1986-01-16 1987-07-20 Hitachi Ltd 半導体記憶装置
US7855748B2 (en) * 2007-12-03 2010-12-21 Altasens, Inc. Reference voltage generation in imaging sensors

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2129166B2 (de) * 1970-06-12 1974-03-28 Hitachi Ltd., Tokio Halbleiterspeicher
US3725878A (en) * 1970-10-30 1973-04-03 Ibm Memory cell circuit
US4078261A (en) * 1976-01-02 1978-03-07 Motorola, Inc. Sense/write circuits for bipolar random access memory

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2406281A1 (fr) * 1977-08-24 1979-05-11 Siemens Ag Circuit de reglage pour l'adaptation de cellules de memoire dans des modules bipolaires
EP0019988A1 (en) * 1979-02-28 1980-12-10 Fujitsu Limited System for selecting word lines in a bipolar RAM

Also Published As

Publication number Publication date
JPS5375828A (en) 1978-07-05
NL179244C (nl) 1986-08-01
DE2756267C3 (de) 1986-10-02
US4164791A (en) 1979-08-14
DE2756267B2 (nl) 1979-06-28
NL179244B (nl) 1986-03-03
JPS5727552B2 (nl) 1982-06-11
DE2756267A1 (de) 1978-06-22

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Legal Events

Date Code Title Description
A85 Still pending on 85-01-01
V1 Lapsed because of non-payment of the annual fee

Effective date: 19950701