NL191683B - Halfgeleidergeheugenschakeling. - Google Patents

Halfgeleidergeheugenschakeling.

Info

Publication number
NL191683B
NL191683B NL7801879A NL7801879A NL191683B NL 191683 B NL191683 B NL 191683B NL 7801879 A NL7801879 A NL 7801879A NL 7801879 A NL7801879 A NL 7801879A NL 191683 B NL191683 B NL 191683B
Authority
NL
Netherlands
Prior art keywords
semiconductor memory
memory circuit
circuit
semiconductor
memory
Prior art date
Application number
NL7801879A
Other languages
English (en)
Other versions
NL7801879A (nl
NL191683C (nl
Original Assignee
Shinkokai Zaidan Hojin Hando
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1846577A external-priority patent/JPS53103330A/ja
Priority claimed from JP52020653A external-priority patent/JPS5852348B2/ja
Priority claimed from JP52035956A external-priority patent/JPS5837995B2/ja
Priority claimed from JP3630477A external-priority patent/JPS53121528A/ja
Priority claimed from JP3790577A external-priority patent/JPS53123040A/ja
Priority claimed from JP8322677A external-priority patent/JPS5418284A/ja
Application filed by Shinkokai Zaidan Hojin Hando filed Critical Shinkokai Zaidan Hojin Hando
Publication of NL7801879A publication Critical patent/NL7801879A/nl
Priority to NL9500518A priority Critical patent/NL9500518A/nl
Publication of NL191683B publication Critical patent/NL191683B/nl
Application granted granted Critical
Publication of NL191683C publication Critical patent/NL191683C/nl

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/047—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using electro-optical elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7841—Field effect transistors with field effect produced by an insulated gate with floating body, e.g. programmable transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/10—DRAM devices comprising bipolar components

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
NL7801879A 1977-02-21 1978-02-20 Halfgeleidergeheugenschakeling. NL191683C (nl)

Priority Applications (1)

Application Number Priority Date Filing Date Title
NL9500518A NL9500518A (nl) 1977-02-21 1995-03-16 Halfgeleidergeheugenschakeling.

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP1846577A JPS53103330A (en) 1977-02-21 1977-02-21 Semiconductor memory
JP52020653A JPS5852348B2 (ja) 1977-02-26 1977-02-26 半導体メモリ
JP52035956A JPS5837995B2 (ja) 1977-03-30 1977-03-30 半導体メモリ
JP3630477A JPS53121528A (en) 1977-03-31 1977-03-31 Semiconductor memory
JP3790577A JPS53123040A (en) 1977-04-02 1977-04-02 Semiconductor memory
JP8322677A JPS5418284A (en) 1977-07-11 1977-07-11 Semiconductor memory

Publications (3)

Publication Number Publication Date
NL7801879A NL7801879A (nl) 1978-08-23
NL191683B true NL191683B (nl) 1995-10-02
NL191683C NL191683C (nl) 1996-02-05

Family

ID=27548791

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7801879A NL191683C (nl) 1977-02-21 1978-02-20 Halfgeleidergeheugenschakeling.

Country Status (5)

Country Link
US (3) US4434433A (nl)
DE (1) DE2807181C2 (nl)
FR (1) FR2381373B1 (nl)
GB (1) GB1602361A (nl)
NL (1) NL191683C (nl)

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US5808328A (en) * 1977-02-21 1998-09-15 Zaidan Hojin Handotai Kenkyu Shinkokai High-speed and high-density semiconductor memory
GB1602984A (en) * 1977-05-15 1981-11-18 Zaidan Hojin Handotai Kenkyu Integrated semiconductor circuit
US4284997A (en) * 1977-07-07 1981-08-18 Zaidan Hojin Handotai Kenkyu Shinkokai Static induction transistor and its applied devices
JPS5466080A (en) * 1977-11-05 1979-05-28 Nippon Gakki Seizo Kk Semiconductor device
JPS54145486A (en) * 1978-05-08 1979-11-13 Handotai Kenkyu Shinkokai Gaas semiconductor device
JPS55115355A (en) * 1979-02-28 1980-09-05 Nec Corp Mos type memory
JPS5599765A (en) * 1979-01-25 1980-07-30 Nec Corp Mos memory device
EP0014388B1 (en) * 1979-01-25 1983-12-21 Nec Corporation Semiconductor memory device
JPS55103756A (en) * 1979-01-31 1980-08-08 Semiconductor Res Found Electrostatic induction transistor integrated circuit
FR2480501A1 (fr) * 1980-04-14 1981-10-16 Thomson Csf Dispositif semi-conducteur a grille profonde accessible par la surface et procede de fabrication
FR2480502A1 (fr) * 1980-04-14 1981-10-16 Thomson Csf Dispositif semi-conducteur a grille profonde, son application a une diode blocable, et procede de fabrication
FR2480505A1 (fr) * 1980-04-14 1981-10-16 Thomson Csf Transistor a effet de champ a jonction de puissance a fonctionnement vertical et procede de fabrication
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US4528745A (en) * 1982-07-13 1985-07-16 Toyo Denki Seizo Kabushiki Kaisha Method for the formation of buried gates of a semiconductor device utilizing etch and refill techniques
DE3467953D1 (en) * 1983-04-21 1988-01-14 Toshiba Kk Semiconductor device having an element isolation layer and method of manufacturing the same
KR920010461B1 (ko) * 1983-09-28 1992-11-28 가부시끼가이샤 히다찌세이사꾸쇼 반도체 메모리와 그 제조 방법
USRE33261E (en) * 1984-07-03 1990-07-10 Texas Instruments, Incorporated Trench capacitor for high density dynamic RAM
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US5208657A (en) * 1984-08-31 1993-05-04 Texas Instruments Incorporated DRAM Cell with trench capacitor and vertical channel in substrate
JPH0793365B2 (ja) * 1984-09-11 1995-10-09 株式会社東芝 半導体記憶装置およびその製造方法
US4824793A (en) * 1984-09-27 1989-04-25 Texas Instruments Incorporated Method of making DRAM cell with trench capacitor
US5225697A (en) * 1984-09-27 1993-07-06 Texas Instruments, Incorporated dRAM cell and method
US5102817A (en) * 1985-03-21 1992-04-07 Texas Instruments Incorporated Vertical DRAM cell and method
JPS62114265A (ja) * 1985-11-13 1987-05-26 Mitsubishi Electric Corp 半導体記憶装置
JPS62219966A (ja) * 1986-03-22 1987-09-28 Toshiba Corp 半導体装置
US4829017A (en) * 1986-09-25 1989-05-09 Texas Instruments Incorporated Method for lubricating a high capacity dram cell
US4786958A (en) * 1986-11-17 1988-11-22 General Motors Corporation Lateral dual gate thyristor and method of fabricating same
US5109259A (en) * 1987-09-22 1992-04-28 Texas Instruments Incorporated Multiple DRAM cells in a trench
US4861731A (en) * 1988-02-02 1989-08-29 General Motors Corporation Method of fabricating a lateral dual gate thyristor
JP2655859B2 (ja) * 1988-02-03 1997-09-24 株式会社日立製作所 半導体記憶装置
US5103276A (en) * 1988-06-01 1992-04-07 Texas Instruments Incorporated High performance composed pillar dram cell
US5225363A (en) * 1988-06-28 1993-07-06 Texas Instruments Incorporated Trench capacitor DRAM cell and method of manufacture
US5105245A (en) * 1988-06-28 1992-04-14 Texas Instruments Incorporated Trench capacitor DRAM cell with diffused bit lines adjacent to a trench
US4910709A (en) * 1988-08-10 1990-03-20 International Business Machines Corporation Complementary metal-oxide-semiconductor transistor and one-capacitor dynamic-random-access memory cell
US5051796A (en) * 1988-11-10 1991-09-24 Texas Instruments Incorporated Cross-point contact-free array with a high-density floating-gate structure
US5238855A (en) * 1988-11-10 1993-08-24 Texas Instruments Incorporated Cross-point contact-free array with a high-density floating-gate structure
US5850093A (en) * 1989-11-20 1998-12-15 Tarng; Huang Chang Uni-directional flash device
JP3469251B2 (ja) * 1990-02-14 2003-11-25 株式会社東芝 半導体装置の製造方法
KR940007651B1 (ko) * 1990-04-06 1994-08-22 마쯔시다덴기산교 가부시기가이샤 반도체메모리소자
JPH04188869A (ja) * 1990-11-22 1992-07-07 Mitsubishi Electric Corp 接合型電界効果トランジスタとキャパシタとを含む半導体記憶装置およびその製造方法
JP3202223B2 (ja) * 1990-11-27 2001-08-27 日本電気株式会社 トランジスタの製造方法
KR940002835B1 (ko) * 1991-04-17 1994-04-04 재단법인 한국전자통신연구소 접합전계형 다이내믹 램을 제조하는 방법 및 그 다이내믹 램의 구조
US5208172A (en) * 1992-03-02 1993-05-04 Motorola, Inc. Method for forming a raised vertical transistor
JP3229012B2 (ja) * 1992-05-21 2001-11-12 株式会社東芝 半導体装置の製造方法
BE1007475A3 (nl) * 1993-09-06 1995-07-11 Philips Electronics Nv Halfgeleiderinrichting met een niet-vluchtig geheugen en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting.
GB9421138D0 (en) * 1994-10-20 1994-12-07 Hitachi Europ Ltd Memory device
EP0726603B1 (en) * 1995-02-10 1999-04-21 SILICONIX Incorporated Trenched field effect transistor with PN depletion barrier
JPH11191596A (ja) * 1997-04-02 1999-07-13 Sony Corp 半導体メモリセル及びその製造方法
US6204529B1 (en) * 1999-08-27 2001-03-20 Hsing Lan Lung 8 bit per cell non-volatile semiconductor memory structure utilizing trench technology and dielectric floating gate
US6507063B2 (en) 2000-04-17 2003-01-14 International Business Machines Corporation Poly-poly/MOS capacitor having a gate encapsulating first electrode layer
JP4226205B2 (ja) * 2000-08-11 2009-02-18 富士雄 舛岡 半導体記憶装置の製造方法
US6784483B2 (en) * 2002-09-04 2004-08-31 Macronix International Co., Ltd. Method for preventing hole and electron movement in NROM devices
JP2004111478A (ja) * 2002-09-13 2004-04-08 Sharp Corp 不揮発性半導体記憶装置およびその製造方法
US6887768B1 (en) * 2003-05-15 2005-05-03 Lovoltech, Inc. Method and structure for composite trench fill
US7288809B1 (en) * 2003-12-16 2007-10-30 Spansion Llc Flash memory with buried bit lines
US7315474B2 (en) * 2005-01-03 2008-01-01 Macronix International Co., Ltd Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays
DE102011003456A1 (de) * 2011-02-01 2012-08-02 Robert Bosch Gmbh Halbleiteranordnung mit reduziertem Einschaltwiderstand

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Also Published As

Publication number Publication date
US5883406A (en) 1999-03-16
US4994999A (en) 1991-02-19
US4434433A (en) 1984-02-28
FR2381373B1 (fr) 1987-11-06
GB1602361A (en) 1981-11-11
DE2807181C2 (de) 1985-11-28
NL7801879A (nl) 1978-08-23
DE2807181A1 (de) 1978-08-31
NL191683C (nl) 1996-02-05
FR2381373A1 (fr) 1978-09-15

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Legal Events

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BB A search report has been drawn up
BC A request for examination has been filed
A85 Still pending on 85-01-01
V4 Discontinued because of reaching the maximum lifetime of a patent

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