BE789501A - Condensateur electrique dans un circuit integre, utilise notamment comme memoire pour une memoire a semiconducteur - Google Patents

Condensateur electrique dans un circuit integre, utilise notamment comme memoire pour une memoire a semiconducteur

Info

Publication number
BE789501A
BE789501A BE789501DA BE789501A BE 789501 A BE789501 A BE 789501A BE 789501D A BE789501D A BE 789501DA BE 789501 A BE789501 A BE 789501A
Authority
BE
Belgium
Prior art keywords
memory
integrated circuit
electric capacitor
semiconductor memory
semiconductor
Prior art date
Application number
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE789501A publication Critical patent/BE789501A/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
BE789501D 1971-09-30 Condensateur electrique dans un circuit integre, utilise notamment comme memoire pour une memoire a semiconducteur BE789501A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2148948A DE2148948C3 (de) 1971-09-30 1971-09-30 Speicheranordnung mit Ein-Transistor-Speicherelementen

Publications (1)

Publication Number Publication Date
BE789501A true BE789501A (fr) 1973-03-29

Family

ID=5821129

Family Applications (1)

Application Number Title Priority Date Filing Date
BE789501D BE789501A (fr) 1971-09-30 Condensateur electrique dans un circuit integre, utilise notamment comme memoire pour une memoire a semiconducteur

Country Status (9)

Country Link
US (1) US3810125A (fr)
JP (1) JPS5949710B2 (fr)
BE (1) BE789501A (fr)
DE (1) DE2148948C3 (fr)
FR (1) FR2154620B1 (fr)
GB (1) GB1411795A (fr)
IT (1) IT968422B (fr)
LU (1) LU66190A1 (fr)
NL (1) NL7209990A (fr)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7212509A (fr) * 1972-09-15 1974-03-19
US3911464A (en) * 1973-05-29 1975-10-07 Ibm Nonvolatile semiconductor memory
US4028715A (en) * 1973-06-25 1977-06-07 Texas Instruments Incorporated Use of floating diffusion for low-noise electrical inputs in CCD's
US3911466A (en) * 1973-10-29 1975-10-07 Motorola Inc Digitally controllable enhanced capacitor
DE2441385C3 (de) * 1974-08-29 1981-05-07 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Vergrößern des Lesesignals bei einem Ein- Transistor-Speicherelement
JPS5154789A (fr) * 1974-11-09 1976-05-14 Nippon Electric Co
JPS5160480A (ja) * 1974-11-22 1976-05-26 Hitachi Ltd Kondensasoshi
US4012757A (en) * 1975-05-05 1977-03-15 Intel Corporation Contactless random-access memory cell and cell pair
US4005466A (en) * 1975-05-07 1977-01-25 Rca Corporation Planar voltage variable tuning capacitors
JPS6057158B2 (ja) * 1976-08-16 1985-12-13 エヌ・シ−・ア−ル・コ−ポレ−シヨン 不揮発性ランダム・アクセス・メモリ−・セル
GB1602361A (en) * 1977-02-21 1981-11-11 Zaidan Hojin Handotai Kenkyu Semiconductor memory devices
US4360823A (en) * 1977-03-16 1982-11-23 U.S. Philips Corporation Semiconductor device having an improved multilayer wiring system
DE2720533A1 (de) * 1977-05-06 1978-11-09 Siemens Ag Monolithisch integrierte schaltungsanordnung mit ein-transistor- speicherelementen
DE2728928A1 (de) * 1977-06-27 1979-01-18 Siemens Ag Ein-transistor-speicherelement
US4249194A (en) * 1977-08-29 1981-02-03 Texas Instruments Incorporated Integrated circuit MOS capacitor using implanted region to change threshold
DE2740154A1 (de) * 1977-09-06 1979-03-15 Siemens Ag Monolithisch integrierte halbleiteranordnung
JPS5718356A (en) * 1980-07-07 1982-01-30 Mitsubishi Electric Corp Semiconductor memory storage
JPS59172761A (ja) * 1983-03-23 1984-09-29 Hitachi Ltd 半導体装置
JPH0666436B2 (ja) * 1983-04-15 1994-08-24 株式会社日立製作所 半導体集積回路装置
US5600598A (en) * 1994-12-14 1997-02-04 Mosaid Technologies Incorporated Memory cell and wordline driver for embedded DRAM in ASIC process

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
US3560815A (en) * 1968-10-10 1971-02-02 Gen Electric Voltage-variable capacitor with extendible pn junction region
US3706891A (en) * 1971-06-17 1972-12-19 Ibm A. c. stable storage cell

Also Published As

Publication number Publication date
DE2148948C3 (de) 1981-01-15
GB1411795A (en) 1975-10-29
LU66190A1 (fr) 1973-04-02
DE2148948B2 (fr) 1980-04-30
FR2154620A1 (fr) 1973-05-11
IT968422B (it) 1974-03-20
DE2148948A1 (de) 1973-04-12
US3810125A (en) 1974-05-07
JPS5949710B2 (ja) 1984-12-04
JPS4843887A (fr) 1973-06-25
FR2154620B1 (fr) 1977-01-14
NL7209990A (fr) 1973-04-03

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