NL7212509A - - Google Patents

Info

Publication number
NL7212509A
NL7212509A NL7212509A NL7212509A NL7212509A NL 7212509 A NL7212509 A NL 7212509A NL 7212509 A NL7212509 A NL 7212509A NL 7212509 A NL7212509 A NL 7212509A NL 7212509 A NL7212509 A NL 7212509A
Authority
NL
Netherlands
Application number
NL7212509A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL7212509A priority Critical patent/NL7212509A/xx
Priority to DE2341899A priority patent/DE2341899C3/de
Priority to AU60214/73A priority patent/AU465865B2/en
Priority to IT69705/73A priority patent/IT996680B/it
Priority to FR7332776A priority patent/FR2200634B1/fr
Priority to CA180,885A priority patent/CA993571A/en
Priority to JP48102290A priority patent/JPS5244715B2/ja
Priority to GB4278373A priority patent/GB1450167A/en
Publication of NL7212509A publication Critical patent/NL7212509A/xx
Priority to US05/552,294 priority patent/US4255677A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H01L27/0222—Charge pumping, substrate bias generation structures
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
NL7212509A 1972-09-15 1972-09-15 NL7212509A (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
NL7212509A NL7212509A (fr) 1972-09-15 1972-09-15
DE2341899A DE2341899C3 (de) 1972-09-15 1973-08-18 Integrierte Halbleiterschaltung und Verfahren zu ihrem Betrieb
AU60214/73A AU465865B2 (en) 1972-09-15 1973-09-11 Semiconductor device
IT69705/73A IT996680B (it) 1972-09-15 1973-09-12 Dispositivo semiconduttore
FR7332776A FR2200634B1 (fr) 1972-09-15 1973-09-12
CA180,885A CA993571A (en) 1972-09-15 1973-09-12 Semiconductor device
JP48102290A JPS5244715B2 (fr) 1972-09-15 1973-09-12
GB4278373A GB1450167A (en) 1972-09-15 1973-09-12 Integrated citcuits
US05/552,294 US4255677A (en) 1972-09-15 1975-02-24 Charge pump substrate bias generator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7212509A NL7212509A (fr) 1972-09-15 1972-09-15

Publications (1)

Publication Number Publication Date
NL7212509A true NL7212509A (fr) 1974-03-19

Family

ID=19816940

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7212509A NL7212509A (fr) 1972-09-15 1972-09-15

Country Status (9)

Country Link
US (1) US4255677A (fr)
JP (1) JPS5244715B2 (fr)
AU (1) AU465865B2 (fr)
CA (1) CA993571A (fr)
DE (1) DE2341899C3 (fr)
FR (1) FR2200634B1 (fr)
GB (1) GB1450167A (fr)
IT (1) IT996680B (fr)
NL (1) NL7212509A (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2620973A1 (de) * 1975-06-30 1977-01-27 Ibm Halbleiterschaltungsanordnung zur fet-substratvorspannungserzeugung
DE2839073C2 (de) * 1978-09-07 1983-02-17 Siemens AG, 1000 Berlin und 8000 München Dynamische Stromquelle für Halbleiterbausteine und ihre Verwendung
JPS55162257A (en) * 1979-06-05 1980-12-17 Fujitsu Ltd Semiconductor element having substrate bias generator circuit
JPS6038028B2 (ja) * 1979-07-23 1985-08-29 三菱電機株式会社 基板電位発生装置
JPS5619676A (en) * 1979-07-26 1981-02-24 Fujitsu Ltd Semiconductor device
DE3067215D1 (en) * 1979-12-13 1984-04-26 Fujitsu Ltd Charge-pumping semiconductor memory cell comprising a charge-storage region and memory device using such a cell
JPS5771222U (fr) * 1980-10-16 1982-04-30
US4559548A (en) * 1981-04-07 1985-12-17 Tokyo Shibaura Denki Kabushiki Kaisha CMOS Charge pump free of parasitic injection
JPS58122766A (ja) * 1982-01-14 1983-07-21 Toshiba Corp 半導体装置
US4704625A (en) * 1982-08-05 1987-11-03 Motorola, Inc. Capacitor with reduced voltage variability
US4670669A (en) * 1984-08-13 1987-06-02 International Business Machines Corporation Charge pumping structure for a substrate bias generator
DE3685169D1 (de) * 1985-08-26 1992-06-11 Siemens Ag Integrierte schaltung in komplementaerer schaltungstechnik mit einem substratvorspannungs-generator und einer schottky-diode.
US5286986A (en) * 1989-04-13 1994-02-15 Kabushiki Kaisha Toshiba Semiconductor device having CCD and its peripheral bipolar transistors
JPH07105458B2 (ja) * 1989-11-21 1995-11-13 株式会社東芝 複合型集積回路素子
JP2968836B2 (ja) * 1990-11-30 1999-11-02 日本テキサス・インスツルメンツ株式会社 半導体基板電位発生回路
US5364801A (en) * 1990-12-17 1994-11-15 Texas Instruments Incorporated Method of forming a charge pump circuit
US6825878B1 (en) * 1998-12-08 2004-11-30 Micron Technology, Inc. Twin P-well CMOS imager

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3816769A (en) * 1969-12-17 1974-06-11 Integrated Photomatrix Ltd Method and circuit element for the selective charging of a semiconductor diffusion region
US3673428A (en) * 1970-09-18 1972-06-27 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
AU461729B2 (en) * 1971-01-14 1975-06-05 Rca Corporation Charge coupled circuits
BE789501A (fr) * 1971-09-30 1973-03-29 Siemens Ag Condensateur electrique dans un circuit integre, utilise notamment comme memoire pour une memoire a semiconducteur

Also Published As

Publication number Publication date
JPS4969273A (fr) 1974-07-04
AU465865B2 (en) 1975-10-09
DE2341899A1 (de) 1974-03-21
FR2200634B1 (fr) 1978-01-06
DE2341899B2 (de) 1979-02-08
DE2341899C3 (de) 1979-10-04
US4255677A (en) 1981-03-10
JPS5244715B2 (fr) 1977-11-10
FR2200634A1 (fr) 1974-04-19
GB1450167A (en) 1976-09-22
IT996680B (it) 1975-12-10
CA993571A (en) 1976-07-20
AU6021473A (en) 1975-03-13

Similar Documents

Publication Publication Date Title
JPS4968777A (fr)
FR2200634B1 (fr)
FR2143700A1 (fr)
JPS4967585A (fr)
FR2182797B1 (fr)
JPS5324325Y2 (fr)
JPS4882351U (fr)
JPS4919092A (fr)
JPS4989464A (fr)
JPS5235083Y2 (fr)
FR2210289A5 (fr)
JPS48102281U (fr)
CH564724A5 (fr)
CH582368A5 (fr)
CH565494A5 (fr)
CH566437A (fr)
CH566910A5 (fr)
CH567054A5 (fr)
CH567354A5 (fr)
CH567560A5 (fr)
CH574913A5 (fr)
CH563817A5 (fr)
CH589060A5 (fr)
CH562124A5 (fr)
CH559433A5 (fr)