DE69602114T2 - Graben-Feldeffekttransistor mit PN-Verarmungsschicht-Barriere - Google Patents
Graben-Feldeffekttransistor mit PN-Verarmungsschicht-BarriereInfo
- Publication number
- DE69602114T2 DE69602114T2 DE69602114T DE69602114T DE69602114T2 DE 69602114 T2 DE69602114 T2 DE 69602114T2 DE 69602114 T DE69602114 T DE 69602114T DE 69602114 T DE69602114 T DE 69602114T DE 69602114 T2 DE69602114 T2 DE 69602114T2
- Authority
- DE
- Germany
- Prior art keywords
- field effect
- effect transistor
- depletion layer
- layer barrier
- trench field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000004888 barrier function Effects 0.000 title 1
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
- H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
- H01L29/7832—Field effect transistors with field effect produced by an insulated gate with multiple gate structure the structure comprising a MOS gate and at least one non-MOS gate, e.g. JFET or MESFET gate
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US38662095A | 1995-02-10 | 1995-02-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69602114D1 DE69602114D1 (de) | 1999-05-27 |
DE69602114T2 true DE69602114T2 (de) | 1999-08-19 |
Family
ID=23526359
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69602114T Expired - Fee Related DE69602114T2 (de) | 1995-02-10 | 1996-02-06 | Graben-Feldeffekttransistor mit PN-Verarmungsschicht-Barriere |
Country Status (3)
Country | Link |
---|---|
US (1) | US5917216A (de) |
EP (1) | EP0726603B1 (de) |
DE (1) | DE69602114T2 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010063314B4 (de) | 2010-12-17 | 2022-10-13 | Robert Bosch Gmbh | Halbleiteranordnung mit verbesserter Avalanchefestigkeit |
Families Citing this family (61)
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US6236099B1 (en) * | 1996-04-22 | 2001-05-22 | International Rectifier Corp. | Trench MOS device and process for radhard device |
JP4167313B2 (ja) * | 1997-03-18 | 2008-10-15 | 株式会社東芝 | 高耐圧電力用半導体装置 |
EP0924771A4 (de) * | 1997-06-11 | 2000-07-26 | Seiko Epson Corp | Halbleiterbauelement, flüssigkristall-anzeigevorrichtung, und elektronisches gerät mit denselben |
KR100275757B1 (ko) | 1998-08-31 | 2001-01-15 | 김덕중 | 반도체 정류 소자 및 이를 제조하는 방법 |
GB9820904D0 (en) * | 1998-09-26 | 1998-11-18 | Koninkl Philips Electronics Nv | Bi-directional semiconductor switch and switch circuit for battery-powered equipment |
US6198127B1 (en) * | 1999-05-19 | 2001-03-06 | Intersil Corporation | MOS-gated power device having extended trench and doping zone and process for forming same |
US6380569B1 (en) * | 1999-08-10 | 2002-04-30 | Rockwell Science Center, Llc | High power unipolar FET switch |
DE10001869B4 (de) * | 2000-01-18 | 2006-10-26 | Infineon Technologies Ag | In beiden Richtungen sperrendes steuerbares Halbleiterschaltelement |
JP4363736B2 (ja) * | 2000-03-01 | 2009-11-11 | 新電元工業株式会社 | トランジスタ及びその製造方法 |
DE10014660C2 (de) * | 2000-03-24 | 2002-08-29 | Infineon Technologies Ag | Halbleiteranordnung mit einer durch einen Hohlraum von einer Driftstrecke getrennten Trenchelektrode |
US6555895B1 (en) * | 2000-07-17 | 2003-04-29 | General Semiconductor, Inc. | Devices and methods for addressing optical edge effects in connection with etched trenches |
US7745289B2 (en) | 2000-08-16 | 2010-06-29 | Fairchild Semiconductor Corporation | Method of forming a FET having ultra-low on-resistance and low gate charge |
US6445037B1 (en) | 2000-09-28 | 2002-09-03 | General Semiconductor, Inc. | Trench DMOS transistor having lightly doped source structure |
US6916745B2 (en) | 2003-05-20 | 2005-07-12 | Fairchild Semiconductor Corporation | Structure and method for forming a trench MOSFET having self-aligned features |
US7132712B2 (en) | 2002-11-05 | 2006-11-07 | Fairchild Semiconductor Corporation | Trench structure having one or more diodes embedded therein adjacent a PN junction |
US6803626B2 (en) | 2002-07-18 | 2004-10-12 | Fairchild Semiconductor Corporation | Vertical charge control semiconductor device |
US6818513B2 (en) | 2001-01-30 | 2004-11-16 | Fairchild Semiconductor Corporation | Method of forming a field effect transistor having a lateral depletion structure |
US6710403B2 (en) * | 2002-07-30 | 2004-03-23 | Fairchild Semiconductor Corporation | Dual trench power MOSFET |
US6635544B2 (en) | 2001-09-07 | 2003-10-21 | Power Intergrations, Inc. | Method of fabricating a high-voltage transistor with a multi-layered extended drain structure |
US6573558B2 (en) * | 2001-09-07 | 2003-06-03 | Power Integrations, Inc. | High-voltage vertical transistor with a multi-layered extended drain structure |
US7221011B2 (en) * | 2001-09-07 | 2007-05-22 | Power Integrations, Inc. | High-voltage vertical transistor with a multi-gradient drain doping profile |
US7786533B2 (en) | 2001-09-07 | 2010-08-31 | Power Integrations, Inc. | High-voltage vertical transistor with edge termination structure |
US6555873B2 (en) * | 2001-09-07 | 2003-04-29 | Power Integrations, Inc. | High-voltage lateral transistor with a multi-layered extended drain structure |
US7576388B1 (en) | 2002-10-03 | 2009-08-18 | Fairchild Semiconductor Corporation | Trench-gate LDMOS structures |
US6710418B1 (en) | 2002-10-11 | 2004-03-23 | Fairchild Semiconductor Corporation | Schottky rectifier with insulation-filled trenches and method of forming the same |
JP4047153B2 (ja) * | 2002-12-03 | 2008-02-13 | 株式会社東芝 | 半導体装置 |
US7638841B2 (en) | 2003-05-20 | 2009-12-29 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
KR100994719B1 (ko) | 2003-11-28 | 2010-11-16 | 페어차일드코리아반도체 주식회사 | 슈퍼정션 반도체장치 |
US7368777B2 (en) | 2003-12-30 | 2008-05-06 | Fairchild Semiconductor Corporation | Accumulation device with charge balance structure and method of forming the same |
US7183610B2 (en) * | 2004-04-30 | 2007-02-27 | Siliconix Incorporated | Super trench MOSFET including buried source electrode and method of fabricating the same |
US7352036B2 (en) | 2004-08-03 | 2008-04-01 | Fairchild Semiconductor Corporation | Semiconductor power device having a top-side drain using a sinker trench |
WO2006108011A2 (en) | 2005-04-06 | 2006-10-12 | Fairchild Semiconductor Corporation | Trenched-gate field effect transistors and methods of forming the same |
US7446374B2 (en) | 2006-03-24 | 2008-11-04 | Fairchild Semiconductor Corporation | High density trench FET with integrated Schottky diode and method of manufacture |
US7319256B1 (en) | 2006-06-19 | 2008-01-15 | Fairchild Semiconductor Corporation | Shielded gate trench FET with the shield and gate electrodes being connected together |
US7777229B2 (en) * | 2006-09-11 | 2010-08-17 | Sarnoff Corporation | Method and apparatus for reducing smear in back-illuminated imaging sensors |
US7557406B2 (en) * | 2007-02-16 | 2009-07-07 | Power Integrations, Inc. | Segmented pillar layout for a high-voltage vertical transistor |
US7859037B2 (en) | 2007-02-16 | 2010-12-28 | Power Integrations, Inc. | Checkerboarded high-voltage vertical transistor layout |
US8653583B2 (en) * | 2007-02-16 | 2014-02-18 | Power Integrations, Inc. | Sensing FET integrated with a high-voltage transistor |
US7595523B2 (en) | 2007-02-16 | 2009-09-29 | Power Integrations, Inc. | Gate pullback at ends of high-voltage vertical transistor structure |
US7468536B2 (en) | 2007-02-16 | 2008-12-23 | Power Integrations, Inc. | Gate metal routing for transistor with checkerboarded layout |
CN103762243B (zh) | 2007-09-21 | 2017-07-28 | 飞兆半导体公司 | 功率器件 |
US7772668B2 (en) | 2007-12-26 | 2010-08-10 | Fairchild Semiconductor Corporation | Shielded gate trench FET with multiple channels |
US8878292B2 (en) * | 2008-03-02 | 2014-11-04 | Alpha And Omega Semiconductor Incorporated | Self-aligned slotted accumulation-mode field effect transistor (AccuFET) structure and method |
US20120273916A1 (en) | 2011-04-27 | 2012-11-01 | Yedinak Joseph A | Superjunction Structures for Power Devices and Methods of Manufacture |
US8174067B2 (en) | 2008-12-08 | 2012-05-08 | Fairchild Semiconductor Corporation | Trench-based power semiconductor devices with increased breakdown voltage characteristics |
US7791136B1 (en) * | 2009-04-23 | 2010-09-07 | Force Mos Technology Co., Ltd. | Trench MOSFET having trench contacts integrated with trench Schottky rectifiers having planar contacts |
JP6008377B2 (ja) | 2010-03-03 | 2016-10-19 | ルネサスエレクトロニクス株式会社 | Pチャネル型パワーmosfet |
US8319290B2 (en) | 2010-06-18 | 2012-11-27 | Fairchild Semiconductor Corporation | Trench MOS barrier schottky rectifier with a planar surface using CMP techniques |
US8673700B2 (en) | 2011-04-27 | 2014-03-18 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
US8836028B2 (en) | 2011-04-27 | 2014-09-16 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
US8772868B2 (en) | 2011-04-27 | 2014-07-08 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
US8786010B2 (en) | 2011-04-27 | 2014-07-22 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
US8723317B2 (en) * | 2012-09-14 | 2014-05-13 | Force Mos Technology Co., Ltd. | Trench metal oxide semiconductor field effect transistor with embedded schottky rectifier using reduced masks process |
CN102916049B (zh) * | 2012-10-30 | 2015-04-22 | 成都芯源系统有限公司 | 包括结型场效应晶体管的半导体器件及其制造方法 |
US9024328B2 (en) | 2013-07-02 | 2015-05-05 | General Electric Company | Metal-oxide-semiconductor (MOS) devices with increased channel periphery and methods of manufacture |
US9748341B2 (en) | 2013-07-02 | 2017-08-29 | General Electric Company | Metal-oxide-semiconductor (MOS) devices with increased channel periphery |
US9543396B2 (en) | 2013-12-13 | 2017-01-10 | Power Integrations, Inc. | Vertical transistor device structure with cylindrically-shaped regions |
US10325988B2 (en) | 2013-12-13 | 2019-06-18 | Power Integrations, Inc. | Vertical transistor device structure with cylindrically-shaped field plates |
CN108666313B (zh) * | 2017-03-30 | 2021-01-12 | 联华电子股份有限公司 | 改善动态随机存储器行锤现象的半导体结构及其制作方法 |
CN109545839B (zh) * | 2018-11-12 | 2021-08-24 | 东南大学 | 一种双向耐压vdmos器件 |
DE102019216142A1 (de) * | 2019-10-21 | 2021-04-22 | Robert Bosch Gmbh | Vertikaler Feldeffekttransistor und Verfahren zum Ausbilden desselben |
Family Cites Families (17)
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GB1602361A (en) * | 1977-02-21 | 1981-11-11 | Zaidan Hojin Handotai Kenkyu | Semiconductor memory devices |
JPS6252969A (ja) * | 1985-08-30 | 1987-03-07 | Nippon Texas Instr Kk | 絶縁ゲ−ト型電界効果半導体装置 |
US4791462A (en) * | 1987-09-10 | 1988-12-13 | Siliconix Incorporated | Dense vertical j-MOS transistor |
US4835586A (en) * | 1987-09-21 | 1989-05-30 | Siliconix Incorporated | Dual-gate high density fet |
US5164325A (en) * | 1987-10-08 | 1992-11-17 | Siliconix Incorporated | Method of making a vertical current flow field effect transistor |
US4914058A (en) * | 1987-12-29 | 1990-04-03 | Siliconix Incorporated | Grooved DMOS process with varying gate dielectric thickness |
JPH03195064A (ja) * | 1989-12-25 | 1991-08-26 | Nippon Telegr & Teleph Corp <Ntt> | Mos型電界効果トランジスタ |
JP2606404B2 (ja) * | 1990-04-06 | 1997-05-07 | 日産自動車株式会社 | 半導体装置 |
US5168331A (en) * | 1991-01-31 | 1992-12-01 | Siliconix Incorporated | Power metal-oxide-semiconductor field effect transistor |
JP2519369B2 (ja) * | 1992-03-05 | 1996-07-31 | 株式会社東芝 | 半導体装置 |
US5316959A (en) * | 1992-08-12 | 1994-05-31 | Siliconix, Incorporated | Trenched DMOS transistor fabrication using six masks |
US5341011A (en) * | 1993-03-15 | 1994-08-23 | Siliconix Incorporated | Short channel trenched DMOS transistor |
US5410170A (en) * | 1993-04-14 | 1995-04-25 | Siliconix Incorporated | DMOS power transistors with reduced number of contacts using integrated body-source connections |
US5430315A (en) * | 1993-07-22 | 1995-07-04 | Rumennik; Vladimir | Bi-directional power trench MOS field effect transistor having low on-state resistance and low leakage current |
JPH07122749A (ja) * | 1993-09-01 | 1995-05-12 | Toshiba Corp | 半導体装置及びその製造方法 |
US5488236A (en) * | 1994-05-26 | 1996-01-30 | North Carolina State University | Latch-up resistant bipolar transistor with trench IGFET and buried collector |
US5405794A (en) * | 1994-06-14 | 1995-04-11 | Philips Electronics North America Corporation | Method of producing VDMOS device of increased power density |
-
1996
- 1996-02-06 DE DE69602114T patent/DE69602114T2/de not_active Expired - Fee Related
- 1996-02-06 EP EP96300793A patent/EP0726603B1/de not_active Expired - Lifetime
- 1996-10-31 US US08/742,326 patent/US5917216A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010063314B4 (de) | 2010-12-17 | 2022-10-13 | Robert Bosch Gmbh | Halbleiteranordnung mit verbesserter Avalanchefestigkeit |
Also Published As
Publication number | Publication date |
---|---|
EP0726603A3 (de) | 1997-01-08 |
DE69602114D1 (de) | 1999-05-27 |
EP0726603B1 (de) | 1999-04-21 |
EP0726603A2 (de) | 1996-08-14 |
US5917216A (en) | 1999-06-29 |
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