JPS55134976A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55134976A
JPS55134976A JP4280179A JP4280179A JPS55134976A JP S55134976 A JPS55134976 A JP S55134976A JP 4280179 A JP4280179 A JP 4280179A JP 4280179 A JP4280179 A JP 4280179A JP S55134976 A JPS55134976 A JP S55134976A
Authority
JP
Japan
Prior art keywords
resistance
polycrystalline
voltage resistance
bend
curve
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4280179A
Other languages
Japanese (ja)
Other versions
JPH0381310B2 (en
Inventor
Masahide Ozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4280179A priority Critical patent/JPS55134976A/en
Publication of JPS55134976A publication Critical patent/JPS55134976A/en
Publication of JPH0381310B2 publication Critical patent/JPH0381310B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To improve electrostatic dielectric strength without changing layout of circuit, by broadening width of polycrystalline Si resistance layer at curve or bend. CONSTITUTION:Electrostatic breakdown voltage resistance of protective circuit using polycrystalline Si resistance is determined mostly by voltage resistance of the polycrystalline Si resistance itself, that is, as the polycrystalline Si's thickness, width and resistance value get larger, the voltage resistance becomes higher. On the other hand, these constants are limited by characteristics of MOSIC and the manufacturing procedure, and current is concentrated at curves or bends to excessively heat these section locally, and this is possible to give rise fusing. And therefore, by broadening widths of curve and bend 7 to make them wider than rectilinear section 3, it becomes possible to increase voltage resistance of the polycrystalline Si resistance without expanding area of IC device and therefore to improve electrostatic dielectric strength of the device.
JP4280179A 1979-04-09 1979-04-09 Semiconductor device Granted JPS55134976A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4280179A JPS55134976A (en) 1979-04-09 1979-04-09 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4280179A JPS55134976A (en) 1979-04-09 1979-04-09 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS55134976A true JPS55134976A (en) 1980-10-21
JPH0381310B2 JPH0381310B2 (en) 1991-12-27

Family

ID=12646062

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4280179A Granted JPS55134976A (en) 1979-04-09 1979-04-09 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55134976A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01149451A (en) * 1987-12-04 1989-06-12 Rohm Co Ltd Protective device for cmos input stage gate
JP2002173168A (en) * 2000-12-01 2002-06-18 Seretsuku Kk Food preservation container

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5030255U (en) * 1973-07-13 1975-04-04
JPS50134387A (en) * 1974-04-10 1975-10-24
JPS5429984A (en) * 1977-08-10 1979-03-06 Hitachi Ltd Protector for semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5030255U (en) * 1973-07-13 1975-04-04
JPS50134387A (en) * 1974-04-10 1975-10-24
JPS5429984A (en) * 1977-08-10 1979-03-06 Hitachi Ltd Protector for semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01149451A (en) * 1987-12-04 1989-06-12 Rohm Co Ltd Protective device for cmos input stage gate
JP2002173168A (en) * 2000-12-01 2002-06-18 Seretsuku Kk Food preservation container

Also Published As

Publication number Publication date
JPH0381310B2 (en) 1991-12-27

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