JPS5481086A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5481086A
JPS5481086A JP14898677A JP14898677A JPS5481086A JP S5481086 A JPS5481086 A JP S5481086A JP 14898677 A JP14898677 A JP 14898677A JP 14898677 A JP14898677 A JP 14898677A JP S5481086 A JPS5481086 A JP S5481086A
Authority
JP
Japan
Prior art keywords
layer
conductive layer
conductive
integrated circuit
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14898677A
Other languages
Japanese (ja)
Other versions
JPS6129559B2 (en
Inventor
Katsuhiko Suyama
Hirotsugu Kusakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14898677A priority Critical patent/JPS5481086A/en
Publication of JPS5481086A publication Critical patent/JPS5481086A/en
Publication of JPS6129559B2 publication Critical patent/JPS6129559B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To eliminate the leak current at the mutual wiring forming region, etc. by forming the buffer layer as the high resistance layer of the conductive type opposite to the conductive layer.
CONSTITUTION: Buffer layer 2 is formed into the conductive layer opposote to the conductive layer or into the semiinsulator layer. At the same time, metal layer 5, which forms the mutual wiring between FET and the element such as the resistor or the like and also forms the lead-out electrode, is formed on conductive layer 7 without removing the conductive layer right under layer 5.
COPYRIGHT: (C)1979,JPO&Japio
JP14898677A 1977-12-12 1977-12-12 Semiconductor integrated circuit Granted JPS5481086A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14898677A JPS5481086A (en) 1977-12-12 1977-12-12 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14898677A JPS5481086A (en) 1977-12-12 1977-12-12 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS5481086A true JPS5481086A (en) 1979-06-28
JPS6129559B2 JPS6129559B2 (en) 1986-07-07

Family

ID=15465130

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14898677A Granted JPS5481086A (en) 1977-12-12 1977-12-12 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5481086A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60176275A (en) * 1984-02-22 1985-09-10 Nec Corp Integrated type semiconductor device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61149448U (en) * 1985-03-07 1986-09-16
JPH0339971Y2 (en) * 1985-05-24 1991-08-22
JPH0317498Y2 (en) * 1986-01-31 1991-04-12

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5258381A (en) * 1975-11-08 1977-05-13 Fujitsu Ltd Counter circuit device of dual field effect transistor and gunn effect element
JPS52146185A (en) * 1976-05-28 1977-12-05 Fujitsu Ltd Semiconductor integrated circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5258381A (en) * 1975-11-08 1977-05-13 Fujitsu Ltd Counter circuit device of dual field effect transistor and gunn effect element
JPS52146185A (en) * 1976-05-28 1977-12-05 Fujitsu Ltd Semiconductor integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60176275A (en) * 1984-02-22 1985-09-10 Nec Corp Integrated type semiconductor device

Also Published As

Publication number Publication date
JPS6129559B2 (en) 1986-07-07

Similar Documents

Publication Publication Date Title
JPS51142201A (en) Automatic frequency control circuit
JPS5335401A (en) Transistor circuit
JPS5481086A (en) Semiconductor integrated circuit
JPS5277684A (en) Exeternal wiring of integrated circuit
JPS5413782A (en) Semiconductor device
JPS5394881A (en) Integrated circuit device
JPS5440569A (en) Semiconductor device and its manufacture
JPS5243967A (en) Transistor circuit
JPS51112193A (en) Processing method of semiconductor equipment
JPS53121151A (en) Constant current circuit
JPS5441666A (en) Semiconductor integrated circuit element
JPS5433019A (en) Gate circuit of electronic musical instruments
JPS5365072A (en) Evaulation method of mos type integrated circuit
JPS5379461A (en) Semiconductor device and its manufacturing process
JPS53124072A (en) Semiconductor device
JPS5336185A (en) Electrode lead-out method of semiconductor integrated circuit
JPS52149322A (en) Soft starting circuit of commutation circuit
JPS51147184A (en) Method of mawufacturing of mosic circuit device
JPS5227274A (en) Semiconductor unit and its manufacturing process
JPS51151094A (en) Light conductive element and its manufacturing method
JPS53142168A (en) Reproductive use of semiconductor substrate
JPS5270774A (en) Semiconductor integrated circuit unit
JPS5351425A (en) Voltage raise circuit
JPS5214464A (en) Surface resistance measuring device
JPS5335361A (en) Gate trigger circuit of thyristor