JPS57100764A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57100764A
JPS57100764A JP55176478A JP17647880A JPS57100764A JP S57100764 A JPS57100764 A JP S57100764A JP 55176478 A JP55176478 A JP 55176478A JP 17647880 A JP17647880 A JP 17647880A JP S57100764 A JPS57100764 A JP S57100764A
Authority
JP
Japan
Prior art keywords
region
type
dielectric strength
junction
vapor growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55176478A
Other languages
Japanese (ja)
Inventor
Seiji Yasuda
Shunichi Kai
Toshio Yonezawa
Masafumi Miyagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55176478A priority Critical patent/JPS57100764A/en
Publication of JPS57100764A publication Critical patent/JPS57100764A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0886—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To prevent a decrease in dielectric strength by decreasing on-resistance without increasing the concentration of a vapor growth layer. CONSTITUTION:An N<-> type drain region 2, reverse conductivity type region 3, and N<+> type cource region 4 which are applied vapor growth are formed on an N<+> Si substrate 1 and in a longitudinal D-MOSFET consisting of a gate electrode 7, source electrode 8, and drain electrode 9, the dielectric strength at a junction 10 is determined by electrostatic concentration around a junction warped section 10' at the outside. The thickness t of the depletion layer is made equal to the minimum thickness t' of a projection-shaped buried region 21 and the opposite conductivity type region 3. In this way, the electric field at the part 22 will not be higher than that at the breakdown of the section 10' and the dielectric strength is decided by the part at 10' and is not decreased by the provision of the region 21. The region 21 is of N<+> type and can be maintained at a low resistance value.
JP55176478A 1980-12-16 1980-12-16 Semiconductor device Pending JPS57100764A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55176478A JPS57100764A (en) 1980-12-16 1980-12-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55176478A JPS57100764A (en) 1980-12-16 1980-12-16 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57100764A true JPS57100764A (en) 1982-06-23

Family

ID=16014364

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55176478A Pending JPS57100764A (en) 1980-12-16 1980-12-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57100764A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0471526A1 (en) * 1990-08-11 1992-02-19 Sharp Kabushiki Kaisha Vertical power MOSFET
US5293056A (en) * 1991-06-17 1994-03-08 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with high off-breakdown-voltage and low on resistance
CN102244100A (en) * 2011-06-28 2011-11-16 上海宏力半导体制造有限公司 MOS (metal oxide semiconductor) power semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5742164B2 (en) * 1976-12-17 1982-09-07

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5742164B2 (en) * 1976-12-17 1982-09-07

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0471526A1 (en) * 1990-08-11 1992-02-19 Sharp Kabushiki Kaisha Vertical power MOSFET
US5229634A (en) * 1990-08-11 1993-07-20 Sharp Kabushiki Kaishi Vertical power mosfet
US5293056A (en) * 1991-06-17 1994-03-08 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with high off-breakdown-voltage and low on resistance
CN102244100A (en) * 2011-06-28 2011-11-16 上海宏力半导体制造有限公司 MOS (metal oxide semiconductor) power semiconductor device

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