JPS57106165A - Insulating gate type field-effect transistor - Google Patents

Insulating gate type field-effect transistor

Info

Publication number
JPS57106165A
JPS57106165A JP18199280A JP18199280A JPS57106165A JP S57106165 A JPS57106165 A JP S57106165A JP 18199280 A JP18199280 A JP 18199280A JP 18199280 A JP18199280 A JP 18199280A JP S57106165 A JPS57106165 A JP S57106165A
Authority
JP
Japan
Prior art keywords
type
impurity concentration
region
concentration
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18199280A
Other languages
Japanese (ja)
Other versions
JPH0526349B2 (en
Inventor
Takeaki Okabe
Hideshi Ito
Mineo Katsueda
Isao Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP18199280A priority Critical patent/JPS57106165A/en
Publication of JPS57106165A publication Critical patent/JPS57106165A/en
Publication of JPH0526349B2 publication Critical patent/JPH0526349B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To form the MOS transistor satisfying the performance of high dielectric resistance and the performance of high frequency by shaping structure in which the impurity concentration of a base body is made higher just under a field plate and lower near a drain. CONSTITUTION:A high resistance P type Si epitaxial layer 2 is grown on a P type high concentration Si substrate 1. Boron ions are implanted selectively, and a P type region 12 having impurity concentration higher than the epitaxial layer 2. A gate oxide film 101 and a gate electrode 6 in metal molybdenum are shaped, and phosphorus ions are implanted and an N type low impurity concentration region 5 is formed. N type high impurity concentration region 5 is formed. N type high impurity concentration regions 3, 4 are molded through the diffusion of high concentration phosphorus and a P type region 9 having high concentration through the diffusion of boron. Source and drain electrodes 7, 8 and the field plate 11 are shaped by an aluminum evaporated film.
JP18199280A 1980-12-24 1980-12-24 Insulating gate type field-effect transistor Granted JPS57106165A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18199280A JPS57106165A (en) 1980-12-24 1980-12-24 Insulating gate type field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18199280A JPS57106165A (en) 1980-12-24 1980-12-24 Insulating gate type field-effect transistor

Publications (2)

Publication Number Publication Date
JPS57106165A true JPS57106165A (en) 1982-07-01
JPH0526349B2 JPH0526349B2 (en) 1993-04-15

Family

ID=16110424

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18199280A Granted JPS57106165A (en) 1980-12-24 1980-12-24 Insulating gate type field-effect transistor

Country Status (1)

Country Link
JP (1) JPS57106165A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63185067A (en) * 1986-10-21 1988-07-30 テキサス　インスツルメンツ　インコーポレイテツド Semiconductor insulated gate field effect transistor and manufacture of the same
US5229633A (en) * 1987-06-08 1993-07-20 U.S. Philips Corporation High voltage lateral enhancement IGFET
US5304827A (en) * 1991-10-15 1994-04-19 Texas Instruments Incorporated Performance lateral double-diffused MOS transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5372576A (en) * 1976-12-10 1978-06-28 Hitachi Ltd Insulator gate type field effect transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5372576A (en) * 1976-12-10 1978-06-28 Hitachi Ltd Insulator gate type field effect transistor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63185067A (en) * 1986-10-21 1988-07-30 テキサス　インスツルメンツ　インコーポレイテツド Semiconductor insulated gate field effect transistor and manufacture of the same
US5229633A (en) * 1987-06-08 1993-07-20 U.S. Philips Corporation High voltage lateral enhancement IGFET
US5304827A (en) * 1991-10-15 1994-04-19 Texas Instruments Incorporated Performance lateral double-diffused MOS transistor
US5382535A (en) * 1991-10-15 1995-01-17 Texas Instruments Incorporated Method of fabricating performance lateral double-diffused MOS transistor

Also Published As

Publication number Publication date
JPH0526349B2 (en) 1993-04-15

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