JPS57211276A - Metal insulator semiconduction electrostatic induction transistor - Google Patents

Abstract

PURPOSE:To obtain the transistor operating at high speed by forming a reverse conduction type additional region into a low impurity density region between a main electrode region and an insulating gate electrode in the MIS-SIT, a channel thereof functions as a depletion layer and currents thereof are controlled by a potential barrier layer shaped into the channel. CONSTITUTION:A P<-> type layer 22 is grown onto a P<+> type Si substrate 21 in epitaxial process, an N<-> type region 23 is diffused and shaped to the layer 22, an N<+> type drain region 24 is formed into the region 23, and an N<+> type source region 25 is diffused and shaped into the layer 22 at a regular interval from the region 23. The gate electrode 31 is provided onto the channel region 26 held by the regions 23, 25 formed in this manner through a gate insulating film 27, sections except the electrode 31 are coated with a field insulating film, and a drain electrode 30 and a source electrode 29 are each attached to the regions 24, 25 to which openings are shaped. Accordingly, the extending section of the channel region 26 takes the same conduction type as the region 24 due to the presence of the region 23, the potential barrier layer approaches to the region 25 side and series resistance is reduced.