JPS57211277A - Insulating gate type electrostatic induction transistor and manufacture thereof - Google Patents

Insulating gate type electrostatic induction transistor and manufacture thereof

Info

Publication number
JPS57211277A
JPS57211277A JP9718981A JP9718981A JPS57211277A JP S57211277 A JPS57211277 A JP S57211277A JP 9718981 A JP9718981 A JP 9718981A JP 9718981 A JP9718981 A JP 9718981A JP S57211277 A JPS57211277 A JP S57211277A
Authority
JP
Japan
Prior art keywords
region
electrode
regions
source
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9718981A
Other languages
Japanese (ja)
Inventor
Masafumi Shinpo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP9718981A priority Critical patent/JPS57211277A/en
Publication of JPS57211277A publication Critical patent/JPS57211277A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain the same effect as a short channel without increasing the junction area of source and drain electrode regions by additionally forming shallow low impurity concentration regions, which each contact with the drain region and the source region and are projected to the gate electrode side, previously into a channel region forming the MIS-SIT. CONSTITUTION:An P<+> type drain region 11 and source region 12 are diffused and shaped to an N type Si substrate 10, the whole surface is coated with an oxide film 14 and openings are bored, and a drain electrode 1 is formed to the region 11 and a source electrode 2 to the region 12. An opening is also bored to the film 14 positioned between the regions 11, 12, and the gate electrode 3 is shaped to the opening through a gate oxide film 4, thus forming the MIS-SIT. In this constitution, the shallow N<-> type additional region 15 is anew formed at the electrode 3 side of the region 11 additionally in projecting shape, and the shallow N<-> type additional region 25 is also formed similarly at the electrode 3 side of the region 12. Accordingly, the additional regions of low impurity concentration are shaped into the channel region, the channel region is easily depleted and junction capacitance is decreased.
JP9718981A 1981-06-23 1981-06-23 Insulating gate type electrostatic induction transistor and manufacture thereof Pending JPS57211277A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9718981A JPS57211277A (en) 1981-06-23 1981-06-23 Insulating gate type electrostatic induction transistor and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9718981A JPS57211277A (en) 1981-06-23 1981-06-23 Insulating gate type electrostatic induction transistor and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS57211277A true JPS57211277A (en) 1982-12-25

Family

ID=14185621

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9718981A Pending JPS57211277A (en) 1981-06-23 1981-06-23 Insulating gate type electrostatic induction transistor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57211277A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6876208B2 (en) 2001-12-25 2005-04-05 Renesas Technology Corp. Semiconductor device and method of checking semiconductor storage device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5399778A (en) * 1977-02-11 1978-08-31 Handotai Kenkyu Shinkokai Mos and mis electrostatic induction transistor
JPS53113483A (en) * 1977-03-15 1978-10-03 Handotai Kenkyu Shinkokai Mos and mis electrostatic induction transistor
JPS53146577A (en) * 1977-01-11 1978-12-20 Handotai Kenkyu Shinkokai Mos and mis electrostatic induction fet transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53146577A (en) * 1977-01-11 1978-12-20 Handotai Kenkyu Shinkokai Mos and mis electrostatic induction fet transistor
JPS5399778A (en) * 1977-02-11 1978-08-31 Handotai Kenkyu Shinkokai Mos and mis electrostatic induction transistor
JPS53113483A (en) * 1977-03-15 1978-10-03 Handotai Kenkyu Shinkokai Mos and mis electrostatic induction transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6876208B2 (en) 2001-12-25 2005-04-05 Renesas Technology Corp. Semiconductor device and method of checking semiconductor storage device

Similar Documents

Publication Publication Date Title
JPS6442176A (en) Semiconductor device and manufacture thereof
JPS57192063A (en) Manufacture of semiconductor device
JPS55130171A (en) Mos field effect transistor
JPS57211277A (en) Insulating gate type electrostatic induction transistor and manufacture thereof
JPS54136275A (en) Field effect transistor of isolation gate
JPS56126977A (en) Junction type field effect transistor
JPS56116669A (en) Field effect transistor
JPS55154769A (en) Manufacture of semiconductor device
JPS57100760A (en) Manufacture of semiconductor device
JPS56104470A (en) Semiconductor device and manufacture thereof
JPS5546585A (en) Complementary insulated gate field effect semiconductor device
JPS57120371A (en) Manufacture of complementary type mos semiconductor
JPS57207379A (en) Field-effect transistor
JPS564281A (en) Insulated gate type field effect transistor
JPS57121280A (en) Field effect transistor
JPS572579A (en) Manufacture of junction type field effect transistor
JPS5670669A (en) Longitudinal semiconductor device
JPS5651873A (en) Mos transistor
JPS5724564A (en) Insulated gate field effect transistor
JPS57143867A (en) Insulating gate type field-effect transistor and its manufacture
JPS57211278A (en) Semiconductor device
JPS564280A (en) Insulated gate type field effect transistor
JPS57128966A (en) Mis type semiconductor device
JPS5582468A (en) Insulating gate type field effect transistor and its preparation
JPS57177564A (en) Manufacture of junction type field effect transistor