JPS57207379A - Field-effect transistor - Google Patents

Field-effect transistor

Info

Publication number
JPS57207379A
JPS57207379A JP9248981A JP9248981A JPS57207379A JP S57207379 A JPS57207379 A JP S57207379A JP 9248981 A JP9248981 A JP 9248981A JP 9248981 A JP9248981 A JP 9248981A JP S57207379 A JPS57207379 A JP S57207379A
Authority
JP
Japan
Prior art keywords
region
approximately
gate
concentration
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9248981A
Other languages
Japanese (ja)
Inventor
Sukemitsu Takena
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9248981A priority Critical patent/JPS57207379A/en
Publication of JPS57207379A publication Critical patent/JPS57207379A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain high dielectric resistance without increasing the area of an element by positioning a Schottky gate type FET between source and drain regions with high impurity concentration, forming shallow diffusion regions with comparatively high concentration and comparatively low concentration and shaping the second gate onto the low concentration region when preparing the FET. CONSTITUTION:The N<+> type source and drain regions 6, 11 with approximately 10<19>-10<20>cm<-3> impurity concentration and diffused and formed to the surface layer of a P<-> type semiconductor substrate 7, to the back thereof a second gate G2 is attached, at the interval of several dozen mum, and an N<-> type region 9 with approximately 10<15>-10<16>cm<-3> concentration is shallowly shaped at the side near to the region 6 and an N type region 10 with approximately 10<16>- 10<17>cm<-3> one at the side near to the region 11 in the depth of approximately 1mum while being mutually contacted in the surface layer section of the substrate 7 positioned between these regions. An Al electrode 8 forming a Schottky junction is formed only to the surface of the region 9, and a first gate G1 is attached to the electrode.
JP9248981A 1981-06-16 1981-06-16 Field-effect transistor Pending JPS57207379A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9248981A JPS57207379A (en) 1981-06-16 1981-06-16 Field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9248981A JPS57207379A (en) 1981-06-16 1981-06-16 Field-effect transistor

Publications (1)

Publication Number Publication Date
JPS57207379A true JPS57207379A (en) 1982-12-20

Family

ID=14055705

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9248981A Pending JPS57207379A (en) 1981-06-16 1981-06-16 Field-effect transistor

Country Status (1)

Country Link
JP (1) JPS57207379A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4709251A (en) * 1984-08-27 1987-11-24 Sumitomo Electric Industries, Ltd. Double Schottky-gate field effect transistor
US5324969A (en) * 1991-08-20 1994-06-28 Sanyo Electric Co., Ltd. High-breakdown voltage field-effect transistor
JP2005340739A (en) * 2004-05-31 2005-12-08 Matsushita Electric Ind Co Ltd Switching circuit and semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4709251A (en) * 1984-08-27 1987-11-24 Sumitomo Electric Industries, Ltd. Double Schottky-gate field effect transistor
US5324969A (en) * 1991-08-20 1994-06-28 Sanyo Electric Co., Ltd. High-breakdown voltage field-effect transistor
JP2005340739A (en) * 2004-05-31 2005-12-08 Matsushita Electric Ind Co Ltd Switching circuit and semiconductor device
JP4559772B2 (en) * 2004-05-31 2010-10-13 パナソニック株式会社 Switch circuit

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