JPS57134976A - Manufacture of field effect transistor - Google Patents

Manufacture of field effect transistor

Info

Publication number
JPS57134976A
JPS57134976A JP2014081A JP2014081A JPS57134976A JP S57134976 A JPS57134976 A JP S57134976A JP 2014081 A JP2014081 A JP 2014081A JP 2014081 A JP2014081 A JP 2014081A JP S57134976 A JPS57134976 A JP S57134976A
Authority
JP
Japan
Prior art keywords
type
region
conductivity type
substrate
window
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2014081A
Other languages
Japanese (ja)
Inventor
Shigeru Kawamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Faurecia Clarion Electronics Co Ltd
Original Assignee
Clarion Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clarion Co Ltd filed Critical Clarion Co Ltd
Priority to JP2014081A priority Critical patent/JPS57134976A/en
Publication of JPS57134976A publication Critical patent/JPS57134976A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain an FET of high accuracy by diffusing one conductivity type and the other conductivity type impurities doubly from the surface to the depth reaching one conductivity type substrate sequently in the other conductivity type layer on one conductivity type substrate, and by making thus formed one conductivity type region a channel. CONSTITUTION:An oxide film 6 with a window 12 is formed on a wafer surface where a p type epitaxial layer 11 is formed on an n<+> type substrate 10. Next, n type impurity is diffused to the depth reaching the substrate 10 from the window, and an n type region 13 is formed. Continually, p type impurity is diffused shallower than the n type region 13 from the same window 12, and a p type region 14 is formed. A channel region is made of the n type region 13 which gets from thus-formed surface to the n<+> type substrate 10. Finally, a source region 15 is formed, and a field effect transistor is completed after attaching a gate electrode 18, a source electrode 19, and a drain electrode 20. Therefore, an element of very small size can be manufactured with high accuracy because a channel width is specified by the depth of double diffusion.
JP2014081A 1981-02-16 1981-02-16 Manufacture of field effect transistor Pending JPS57134976A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014081A JPS57134976A (en) 1981-02-16 1981-02-16 Manufacture of field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014081A JPS57134976A (en) 1981-02-16 1981-02-16 Manufacture of field effect transistor

Publications (1)

Publication Number Publication Date
JPS57134976A true JPS57134976A (en) 1982-08-20

Family

ID=12018828

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014081A Pending JPS57134976A (en) 1981-02-16 1981-02-16 Manufacture of field effect transistor

Country Status (1)

Country Link
JP (1) JPS57134976A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6010680A (en) * 1983-06-30 1985-01-19 Nissan Motor Co Ltd Static induction transistor and manufacture thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS499194A (en) * 1972-05-11 1974-01-26

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS499194A (en) * 1972-05-11 1974-01-26

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6010680A (en) * 1983-06-30 1985-01-19 Nissan Motor Co Ltd Static induction transistor and manufacture thereof

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