JPS5619673A - Manufacture of high voltage withsanding mos transistor - Google Patents

Manufacture of high voltage withsanding mos transistor

Info

Publication number
JPS5619673A
JPS5619673A JP9575179A JP9575179A JPS5619673A JP S5619673 A JPS5619673 A JP S5619673A JP 9575179 A JP9575179 A JP 9575179A JP 9575179 A JP9575179 A JP 9575179A JP S5619673 A JPS5619673 A JP S5619673A
Authority
JP
Japan
Prior art keywords
layer
film
region
type
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9575179A
Other languages
Japanese (ja)
Inventor
Toshihide Kuriyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9575179A priority Critical patent/JPS5619673A/en
Publication of JPS5619673A publication Critical patent/JPS5619673A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H01L29/78624—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile the source and the drain regions being asymmetrical
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To reduce the leak current of transistor by etching a semiconductor region including a portion of a channel region, reducing the thickness of a portion of said layer, implanting ions to the thin portion, and increasing the impurity concentration in the vicinity of the boundary between the semiconductor layer and an insulating substrate. CONSTITUTION:A P-type Si layer 2 is formed on an insulating substrate 1 such as sapphire and the like and covered with oxidized film 3. Then, photoetching is performed, and the film 3 at the region containing a portion of a channel region is removed. A hole whose upper side is wide and bottom side is narrow is provided in the layer 2 by using anisotropic etching liquid such as hydrazine and the like, with the remaining film 3 as a mask. Thereafter, the layer 2 is etched into an island shape with said hole being included, and N<+>-type source and drain regions 4 are diffused and formed, and all the surface is covered by a gate oxide film 5. Then, a photoresist film 6 having a window at the portion corresponding to said hole is provided, P-type impurity ions are implanted through the film 5, and a P<+>-type region 7 is formed in the vicinity of the boundary between the layer 2 and substrate 1. Thus, the leak current flowing in this region can be reduced.
JP9575179A 1979-07-27 1979-07-27 Manufacture of high voltage withsanding mos transistor Pending JPS5619673A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9575179A JPS5619673A (en) 1979-07-27 1979-07-27 Manufacture of high voltage withsanding mos transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9575179A JPS5619673A (en) 1979-07-27 1979-07-27 Manufacture of high voltage withsanding mos transistor

Publications (1)

Publication Number Publication Date
JPS5619673A true JPS5619673A (en) 1981-02-24

Family

ID=14146196

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9575179A Pending JPS5619673A (en) 1979-07-27 1979-07-27 Manufacture of high voltage withsanding mos transistor

Country Status (1)

Country Link
JP (1) JPS5619673A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5362979A (en) * 1991-02-01 1994-11-08 Philips Electronics North America Corporation SOI transistor with improved source-high performance

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5362979A (en) * 1991-02-01 1994-11-08 Philips Electronics North America Corporation SOI transistor with improved source-high performance

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