JPS57128978A - Manufacture of junction type field-effect transistor - Google Patents

Manufacture of junction type field-effect transistor

Info

Publication number
JPS57128978A
JPS57128978A JP1409181A JP1409181A JPS57128978A JP S57128978 A JPS57128978 A JP S57128978A JP 1409181 A JP1409181 A JP 1409181A JP 1409181 A JP1409181 A JP 1409181A JP S57128978 A JPS57128978 A JP S57128978A
Authority
JP
Japan
Prior art keywords
region
type
gate
channel
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1409181A
Other languages
Japanese (ja)
Inventor
Tadashi Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JIDO KEISOKU GIJUTSU KENKIYUUKUMIAI
JIDOU KEISOKU GIJUTSU KENKIYUU
JIDOU KEISOKU GIJUTSU KENKIYUUKUMIAI
Original Assignee
JIDO KEISOKU GIJUTSU KENKIYUUKUMIAI
JIDOU KEISOKU GIJUTSU KENKIYUU
JIDOU KEISOKU GIJUTSU KENKIYUUKUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JIDO KEISOKU GIJUTSU KENKIYUUKUMIAI, JIDOU KEISOKU GIJUTSU KENKIYUU, JIDOU KEISOKU GIJUTSU KENKIYUUKUMIAI filed Critical JIDO KEISOKU GIJUTSU KENKIYUUKUMIAI
Priority to JP1409181A priority Critical patent/JPS57128978A/en
Publication of JPS57128978A publication Critical patent/JPS57128978A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To realize the space of a gate and the size of a channel with high accuracy by forming a V-shaped groove to an opposite conduction type channel diffusion layer shaped to the first conduction type first gate region, molding the first conduction type diffusion layer on the surface of the groove and using the first conduction type diffusion layer as the second gate region. CONSTITUTION:The JFET is formed into the island of single crystal Si 23, which is supported by polycrystal Si 21 and surrounded by an oxidized Si film 22. The single crystal Si 23 is shaped in a type such as an N type, and a P type diffusion region 28 used as the first gate region is molded to the single crystal Si. The N type diffusion region 29 functioning as a channel region is formed, and the V-shaped groove 27 is molded to the surface. A P type impurity is diffused to the surface of the V-shaped groove, and the second gate region 26 is formed. Accordingly, the width of the gate and the size of the channel can be realized with high accuracy.
JP1409181A 1981-02-02 1981-02-02 Manufacture of junction type field-effect transistor Pending JPS57128978A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1409181A JPS57128978A (en) 1981-02-02 1981-02-02 Manufacture of junction type field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1409181A JPS57128978A (en) 1981-02-02 1981-02-02 Manufacture of junction type field-effect transistor

Publications (1)

Publication Number Publication Date
JPS57128978A true JPS57128978A (en) 1982-08-10

Family

ID=11851433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1409181A Pending JPS57128978A (en) 1981-02-02 1981-02-02 Manufacture of junction type field-effect transistor

Country Status (1)

Country Link
JP (1) JPS57128978A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51123076A (en) * 1975-04-18 1976-10-27 New Japan Radio Co Ltd The manufacturing process of field effect transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51123076A (en) * 1975-04-18 1976-10-27 New Japan Radio Co Ltd The manufacturing process of field effect transistor

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