JPS5784178A - Field-effect transistor - Google Patents

Field-effect transistor

Info

Publication number
JPS5784178A
JPS5784178A JP55160465A JP16046580A JPS5784178A JP S5784178 A JPS5784178 A JP S5784178A JP 55160465 A JP55160465 A JP 55160465A JP 16046580 A JP16046580 A JP 16046580A JP S5784178 A JPS5784178 A JP S5784178A
Authority
JP
Japan
Prior art keywords
channel layer
layer
oxide film
thickness
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55160465A
Other languages
Japanese (ja)
Other versions
JPH0517713B2 (en
Inventor
Yoshiyasu Sugano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55160465A priority Critical patent/JPS5784178A/en
Publication of JPS5784178A publication Critical patent/JPS5784178A/en
Publication of JPH0517713B2 publication Critical patent/JPH0517713B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors

Abstract

PURPOSE:To reduce the DC resistance of the channel layer of a double-diffusion type MOSFET and prevent bipolar activity without deteriorating other characteristics by a method wherein the channel layer is formed thinner under a gate and thicker at other part. CONSTITUTION:An N<+> type drain diffused region 2 and a P<+> type channel contact diffused region 3 are formed on a surfce of an N type silicone wafer 1 and an oxide film 14 is remained on each region. Then an oxide film 14 of 5,000-1,000Angstrom thickness is formed by a thermal oxidizing method and a polysilicone film 15 is grown to the thickness approximately 4,000Angstrom on the oxide film 14 by a thermal decomposition method. Then the polysilicone 15 is patterned and boron is ion-injected using the patterned polysilicne 15 as mask, so that a channel layer 16 is formed. And a source fiffused layer 17 is formed by side-etching the oxide layer 14 and diffusing phosphorus by a gaseous phase diffusion method. The thickness of the channel layer 16 under the gate is reduced by th side-etched amount.
JP55160465A 1980-11-14 1980-11-14 Field-effect transistor Granted JPS5784178A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55160465A JPS5784178A (en) 1980-11-14 1980-11-14 Field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55160465A JPS5784178A (en) 1980-11-14 1980-11-14 Field-effect transistor

Publications (2)

Publication Number Publication Date
JPS5784178A true JPS5784178A (en) 1982-05-26
JPH0517713B2 JPH0517713B2 (en) 1993-03-09

Family

ID=15715525

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55160465A Granted JPS5784178A (en) 1980-11-14 1980-11-14 Field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5784178A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62282465A (en) * 1986-03-05 1987-12-08 イクシス・コーポレーション Monolithic semiconductor device and manufacture of the same
JPS6381846A (en) * 1986-09-25 1988-04-12 Fuji Electric Co Ltd Manufacture of semiconductor device
JPH0320453U (en) * 1989-07-11 1991-02-28

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4938585A (en) * 1972-08-10 1974-04-10
JPS52132684A (en) * 1976-04-29 1977-11-07 Sony Corp Insulating gate type field effect transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4938585A (en) * 1972-08-10 1974-04-10
JPS52132684A (en) * 1976-04-29 1977-11-07 Sony Corp Insulating gate type field effect transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62282465A (en) * 1986-03-05 1987-12-08 イクシス・コーポレーション Monolithic semiconductor device and manufacture of the same
JPS6381846A (en) * 1986-09-25 1988-04-12 Fuji Electric Co Ltd Manufacture of semiconductor device
JPH0320453U (en) * 1989-07-11 1991-02-28

Also Published As

Publication number Publication date
JPH0517713B2 (en) 1993-03-09

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