DE68927925T2 - Supraleitender Transistor - Google Patents

Supraleitender Transistor

Info

Publication number
DE68927925T2
DE68927925T2 DE68927925T DE68927925T DE68927925T2 DE 68927925 T2 DE68927925 T2 DE 68927925T2 DE 68927925 T DE68927925 T DE 68927925T DE 68927925 T DE68927925 T DE 68927925T DE 68927925 T2 DE68927925 T2 DE 68927925T2
Authority
DE
Germany
Prior art keywords
superconducting transistor
superconducting
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68927925T
Other languages
English (en)
Other versions
DE68927925D1 (de
Inventor
Eiki Narumi
Susumu Kashiwa
Masakazu Rm Nr Matsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Publication of DE68927925D1 publication Critical patent/DE68927925D1/de
Application granted granted Critical
Publication of DE68927925T2 publication Critical patent/DE68927925T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/85—Superconducting active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/20—Permanent superconducting devices
    • H10N60/205—Permanent superconducting devices having three or more electrodes, e.g. transistor-like structures 
    • H10N60/207—Field effect devices
DE68927925T 1988-08-11 1989-08-11 Supraleitender Transistor Expired - Fee Related DE68927925T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20047588 1988-08-11

Publications (2)

Publication Number Publication Date
DE68927925D1 DE68927925D1 (de) 1997-05-07
DE68927925T2 true DE68927925T2 (de) 1997-07-17

Family

ID=16424935

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68927925T Expired - Fee Related DE68927925T2 (de) 1988-08-11 1989-08-11 Supraleitender Transistor

Country Status (5)

Country Link
EP (1) EP0354804B1 (de)
JP (1) JP2862137B2 (de)
KR (1) KR940001296B1 (de)
CN (1) CN1040463A (de)
DE (1) DE68927925T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2050731C (en) * 1990-09-06 1997-03-18 Takao Nakamura Superconducting device having a reduced thickness of oxide superconducting layer and method for manufacturing the same
EP0475838B1 (de) * 1990-09-10 1996-03-06 Sumitomo Electric Industries, Ltd. Supraleitende Einrichtung mit einer reduzierten Dicke der supraleitenden Schicht und Methode zu deren Herstellung
CA2051778C (en) * 1990-09-19 1997-05-06 Takao Nakamura Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer and superconducting device manufactured thereby
EP0478463B1 (de) * 1990-09-27 1996-05-08 Sumitomo Electric Industries, Ltd. Supraleitendes Bauelement mit extrem dünnem supraleitenden Kanal aus supraleitendem Oxidmaterial
EP0478464B1 (de) * 1990-09-27 1997-08-27 Sumitomo Electric Industries, Ltd. Herstellungsverfahren eines supraleitenden Bauelements mit extrem dünnem supraleitenden Kanal aus supraleitendem Oxidmaterial
EP0480814B1 (de) * 1990-10-08 1996-04-24 Sumitomo Electric Industries, Ltd. Supraleitende Einrichtung mit ultradünnem Kanal aus oxydisch supraleitendem Material und Verfahren zu deren Herstellung
CA2054470C (en) * 1990-10-30 1997-07-01 Takao Nakamura Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer and superconducting device manufactured thereby
EP0484251B1 (de) * 1990-10-31 1996-03-20 Sumitomo Electric Industries, Ltd. Aus extrem dünnem supraleitendem Oxydfilm gebildete supraleitende Einrichtung mit extrem kurzem Kanal und Verfahren zu dessen Herstellung
CA2054795C (en) * 1990-11-01 1996-08-06 Hiroshi Inada Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same
EP0494580B1 (de) * 1991-01-07 2002-04-03 International Business Machines Corporation Supraleitender Feldeffekttransistor mit inverser MISFET-Struktur und Verfahren zu dessen Herstellung
DE69117503T2 (de) * 1991-07-19 1996-09-19 Ibm Verbesserter supraleitender Feldeffekt-Transistor mit inverser MISFET-Struktur und Verfahren zu dessen Herstellung
EP0523279A1 (de) * 1991-07-19 1993-01-20 International Business Machines Corporation Elektrische Feldeffekteinrichtungen mit supraleitendem Kanal
DE69210150T2 (de) * 1991-08-26 1996-10-31 Sumitomo Electric Industries Supraleitende Einrichtung mit extrem dünnen supraleitenden Kanal aus oxydisch supraleitendem Material und Verfahren zu deren Herstellung
EP0534811B1 (de) * 1991-08-28 1996-05-08 Sumitomo Electric Industries, Ltd. Verfahren zur Herstellung von supraleitenden Schichten aus supraleitendem Oxyd in denen nicht-supraleitende Gebiete vorkommen und Verfahren zur Herstellung eines Bauelements welches solche Schichten enthält
US5828079A (en) * 1992-06-29 1998-10-27 Matsushita Electric Industrial Co., Ltd. Field-effect type superconducting device including bi-base oxide compound containing copper
JPH0745880A (ja) * 1993-07-29 1995-02-14 Sumitomo Electric Ind Ltd 絶縁体薄膜と酸化物超電導薄膜との積層膜
EP0691690B1 (de) * 1994-07-04 1998-05-13 Sumitomo Electric Industries, Ltd. Supraleitendes Bauelement mit einem supraleitenden Kanal aus supraleitendem Oxidmaterial
KR101234870B1 (ko) * 2011-05-23 2013-02-19 한국과학기술원 반도체-초전도체 전이 트랜지스터

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6288381A (ja) * 1985-10-11 1987-04-22 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 超導電性スイツチング装置
AU597951B2 (en) * 1986-03-27 1990-06-14 Monsanto Company Enhanced protein production in bacteria by employing a novel ribosome binding site
JP2654567B2 (ja) * 1987-03-17 1997-09-17 株式会社 半導体エネルギー研究所 超電導素子の動作方法
EP0324044B1 (de) * 1988-01-15 1992-11-25 International Business Machines Corporation Feldeffektanordnung mit supraleitendem Kanal

Also Published As

Publication number Publication date
CN1040463A (zh) 1990-03-14
DE68927925D1 (de) 1997-05-07
KR900004048A (ko) 1990-03-27
JPH02138780A (ja) 1990-05-28
KR940001296B1 (ko) 1994-02-18
EP0354804A3 (de) 1990-07-18
JP2862137B2 (ja) 1999-02-24
EP0354804B1 (de) 1997-04-02
EP0354804A2 (de) 1990-02-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee