KR900004048A - 초전도 트랜지스터 - Google Patents

초전도 트랜지스터 Download PDF

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Publication number
KR900004048A
KR900004048A KR1019890011466A KR890011466A KR900004048A KR 900004048 A KR900004048 A KR 900004048A KR 1019890011466 A KR1019890011466 A KR 1019890011466A KR 890011466 A KR890011466 A KR 890011466A KR 900004048 A KR900004048 A KR 900004048A
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KR
South Korea
Prior art keywords
layer
superconducting
superconductor
thickness
disposed
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KR1019890011466A
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English (en)
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KR940001296B1 (ko
Inventor
히데끼 나루미
스스무 가시와
마사까즈 마쓰이
Original Assignee
도모마쓰 겐고
후루까와 덴끼 고오교오 가부시끼가이샤
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Application filed by 도모마쓰 겐고, 후루까와 덴끼 고오교오 가부시끼가이샤 filed Critical 도모마쓰 겐고
Publication of KR900004048A publication Critical patent/KR900004048A/ko
Application granted granted Critical
Publication of KR940001296B1 publication Critical patent/KR940001296B1/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/85—Superconducting active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/20—Permanent superconducting devices
    • H10N60/205—Permanent superconducting devices having three or more electrodes, e.g. transistor-like structures 
    • H10N60/207—Field effect devices

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  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

내용 없음

Description

초전도 트랜지스터
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1도는 본 발명에 관한 초전도 트랜지스터의 일실시예를 도시한 단면도.
제 2도는 동실시예에 있어서의 초전도 트랜지스터의 특성도.
제 3도 내지 제 6도는 종래의 실시예에서 볼 수 이슨 각종 초전도 트랜지스터를 도시한 단면도.

Claims (2)

  1. 기판상에 에피택셜성장된 산화물 초전도체층상에, 소오스전극, 드레인 전극이 배치되어 있는 동시에 이들 양전극간의 초전도체층시에, 에치택셜성장된 절연막을 개재하여 게이트 전극이 배치되어있고, 상기에 있어서의 초전도체층의 두께를 dc, 초전도계층의 유전율을 ε, 초전도 체층의 케리어 농도 n, 초전도체층의 금제대폭에 대응하는 전압을Vf로 한 경우, 초전도체층의 두께 dc가 dc 2 (2Vf)/n일것을 특징으로 하는 초전도 트랜지스터.
  2. 기판상에 피택셜성장된 산화물 처전도체층상에, 소오스전극, 드레인전극이 배치되어 있는 동시에 당해양 전극간의 초전도체층의 양면상에 에피텍셜성장된 절연막을 개재하여 게이트 전극이 대항하게 배치되어있고, 상기에 있어서의 초전도 체증이 두께를 dc, 초전도 체층의 유전율을 ε, 초전도 체층의 케리어 농도를 n, 초전도체층의 금제대폭에 대응하는 전압을Vf로 한 경우, 초전도체층의 두께 dc가 dc 2 (2Vf)/n일것을 특징으로 하는 초전도 트랜지스터.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890011466A 1988-08-11 1989-08-11 초전도 트랜지스터 KR940001296B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP63-200475 1988-08-11
JP88-200475 1988-08-11
JP20047588 1988-08-11

Publications (2)

Publication Number Publication Date
KR900004048A true KR900004048A (ko) 1990-03-27
KR940001296B1 KR940001296B1 (ko) 1994-02-18

Family

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Family Applications (1)

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KR1019890011466A KR940001296B1 (ko) 1988-08-11 1989-08-11 초전도 트랜지스터

Country Status (5)

Country Link
EP (1) EP0354804B1 (ko)
JP (1) JP2862137B2 (ko)
KR (1) KR940001296B1 (ko)
CN (1) CN1040463A (ko)
DE (1) DE68927925T2 (ko)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2050731C (en) * 1990-09-06 1997-03-18 Takao Nakamura Superconducting device having a reduced thickness of oxide superconducting layer and method for manufacturing the same
CA2051048C (en) * 1990-09-10 1996-07-02 Takao Nakamura Superconducting device having a reduced thickness of oxide superconducting layer and method for manufacturing the same
CA2051778C (en) * 1990-09-19 1997-05-06 Takao Nakamura Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer and superconducting device manufactured thereby
EP0478463B1 (en) * 1990-09-27 1996-05-08 Sumitomo Electric Industries, Ltd. Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material
EP0478464B1 (en) * 1990-09-27 1997-08-27 Sumitomo Electric Industries, Ltd. Method for manufacturing a superconducting device having an extremely thin superconducting channel formed of oxide superconductor material
CA2052970C (en) * 1990-10-08 1996-07-02 Takao Nakamura Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same
CA2054470C (en) * 1990-10-30 1997-07-01 Takao Nakamura Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer and superconducting device manufactured thereby
DE69118106T2 (de) * 1990-10-31 1996-10-31 Sumitomo Electric Industries Aus extrem dünnem supraleitendem Oxydfilm gebildete supraleitende Einrichtung mit extrem kurzem Kanal und Verfahren zu dessen Herstellung
CA2054795C (en) * 1990-11-01 1996-08-06 Hiroshi Inada Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same
EP0494580B1 (en) * 1991-01-07 2002-04-03 International Business Machines Corporation Superconducting field-effect transistor with inverted MISFET structure and method for making the same
EP0523279A1 (en) * 1991-07-19 1993-01-20 International Business Machines Corporation Electric field-effect devices having a superconducting channel
EP0523275B1 (en) * 1991-07-19 1996-02-28 International Business Machines Corporation Enhanced superconducting field-effect transistor with inverted MISFET structure and method for making the same
EP0533519B1 (en) * 1991-08-26 1996-04-24 Sumitomo Electric Industries, Ltd. Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same
DE69210523T2 (de) * 1991-08-28 1997-01-02 Sumitomo Electric Industries Verfahren zur Herstellung von supraleitenden Schichten aus supraleitendem Oxyd in denen nicht-supraleitende Gebiete vorkommen und Verfahren zur Herstellung eines Bauelements welches solche Schichten enthält
US5828079A (en) * 1992-06-29 1998-10-27 Matsushita Electric Industrial Co., Ltd. Field-effect type superconducting device including bi-base oxide compound containing copper
JPH0745880A (ja) * 1993-07-29 1995-02-14 Sumitomo Electric Ind Ltd 絶縁体薄膜と酸化物超電導薄膜との積層膜
CA2153189A1 (en) * 1994-07-04 1996-01-05 Takao Nakamura Superconducting device having a superconducting channel formed of oxide superconductor material
KR101234870B1 (ko) * 2011-05-23 2013-02-19 한국과학기술원 반도체-초전도체 전이 트랜지스터

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6288381A (ja) * 1985-10-11 1987-04-22 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 超導電性スイツチング装置
AU597951B2 (en) * 1986-03-27 1990-06-14 Monsanto Company Enhanced protein production in bacteria by employing a novel ribosome binding site
JP2654567B2 (ja) * 1987-03-17 1997-09-17 株式会社 半導体エネルギー研究所 超電導素子の動作方法
DE3876228T2 (de) * 1988-01-15 1993-06-03 Ibm Feldeffektanordnung mit supraleitendem kanal.

Also Published As

Publication number Publication date
DE68927925D1 (de) 1997-05-07
JPH02138780A (ja) 1990-05-28
KR940001296B1 (ko) 1994-02-18
EP0354804A2 (en) 1990-02-14
EP0354804A3 (en) 1990-07-18
EP0354804B1 (en) 1997-04-02
CN1040463A (zh) 1990-03-14
DE68927925T2 (de) 1997-07-17
JP2862137B2 (ja) 1999-02-24

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