KR900004048A - 초전도 트랜지스터 - Google Patents
초전도 트랜지스터 Download PDFInfo
- Publication number
- KR900004048A KR900004048A KR1019890011466A KR890011466A KR900004048A KR 900004048 A KR900004048 A KR 900004048A KR 1019890011466 A KR1019890011466 A KR 1019890011466A KR 890011466 A KR890011466 A KR 890011466A KR 900004048 A KR900004048 A KR 900004048A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- superconducting
- superconductor
- thickness
- disposed
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/85—Superconducting active materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/20—Permanent superconducting devices
- H10N60/205—Permanent superconducting devices having three or more electrodes, e.g. transistor-like structures
- H10N60/207—Field effect devices
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1도는 본 발명에 관한 초전도 트랜지스터의 일실시예를 도시한 단면도.
제 2도는 동실시예에 있어서의 초전도 트랜지스터의 특성도.
제 3도 내지 제 6도는 종래의 실시예에서 볼 수 이슨 각종 초전도 트랜지스터를 도시한 단면도.
Claims (2)
- 기판상에 에피택셜성장된 산화물 초전도체층상에, 소오스전극, 드레인 전극이 배치되어 있는 동시에 이들 양전극간의 초전도체층시에, 에치택셜성장된 절연막을 개재하여 게이트 전극이 배치되어있고, 상기에 있어서의 초전도체층의 두께를 dc, 초전도계층의 유전율을 ε, 초전도 체층의 케리어 농도 n, 초전도체층의 금제대폭에 대응하는 전압을Vf로 한 경우, 초전도체층의 두께 dc가 dc 2 (2Vf)/n일것을 특징으로 하는 초전도 트랜지스터.
- 기판상에 피택셜성장된 산화물 처전도체층상에, 소오스전극, 드레인전극이 배치되어 있는 동시에 당해양 전극간의 초전도체층의 양면상에 에피텍셜성장된 절연막을 개재하여 게이트 전극이 대항하게 배치되어있고, 상기에 있어서의 초전도 체증이 두께를 dc, 초전도 체층의 유전율을 ε, 초전도 체층의 케리어 농도를 n, 초전도체층의 금제대폭에 대응하는 전압을Vf로 한 경우, 초전도체층의 두께 dc가 dc 2 (2Vf)/n일것을 특징으로 하는 초전도 트랜지스터.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63-200475 | 1988-08-11 | ||
JP88-200475 | 1988-08-11 | ||
JP20047588 | 1988-08-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR900004048A true KR900004048A (ko) | 1990-03-27 |
KR940001296B1 KR940001296B1 (ko) | 1994-02-18 |
Family
ID=16424935
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890011466A KR940001296B1 (ko) | 1988-08-11 | 1989-08-11 | 초전도 트랜지스터 |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0354804B1 (ko) |
JP (1) | JP2862137B2 (ko) |
KR (1) | KR940001296B1 (ko) |
CN (1) | CN1040463A (ko) |
DE (1) | DE68927925T2 (ko) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2050731C (en) * | 1990-09-06 | 1997-03-18 | Takao Nakamura | Superconducting device having a reduced thickness of oxide superconducting layer and method for manufacturing the same |
CA2051048C (en) * | 1990-09-10 | 1996-07-02 | Takao Nakamura | Superconducting device having a reduced thickness of oxide superconducting layer and method for manufacturing the same |
CA2051778C (en) * | 1990-09-19 | 1997-05-06 | Takao Nakamura | Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer and superconducting device manufactured thereby |
EP0478463B1 (en) * | 1990-09-27 | 1996-05-08 | Sumitomo Electric Industries, Ltd. | Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material |
EP0478464B1 (en) * | 1990-09-27 | 1997-08-27 | Sumitomo Electric Industries, Ltd. | Method for manufacturing a superconducting device having an extremely thin superconducting channel formed of oxide superconductor material |
CA2052970C (en) * | 1990-10-08 | 1996-07-02 | Takao Nakamura | Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same |
CA2054470C (en) * | 1990-10-30 | 1997-07-01 | Takao Nakamura | Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer and superconducting device manufactured thereby |
DE69118106T2 (de) * | 1990-10-31 | 1996-10-31 | Sumitomo Electric Industries | Aus extrem dünnem supraleitendem Oxydfilm gebildete supraleitende Einrichtung mit extrem kurzem Kanal und Verfahren zu dessen Herstellung |
CA2054795C (en) * | 1990-11-01 | 1996-08-06 | Hiroshi Inada | Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same |
EP0494580B1 (en) * | 1991-01-07 | 2002-04-03 | International Business Machines Corporation | Superconducting field-effect transistor with inverted MISFET structure and method for making the same |
EP0523279A1 (en) * | 1991-07-19 | 1993-01-20 | International Business Machines Corporation | Electric field-effect devices having a superconducting channel |
EP0523275B1 (en) * | 1991-07-19 | 1996-02-28 | International Business Machines Corporation | Enhanced superconducting field-effect transistor with inverted MISFET structure and method for making the same |
EP0533519B1 (en) * | 1991-08-26 | 1996-04-24 | Sumitomo Electric Industries, Ltd. | Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same |
DE69210523T2 (de) * | 1991-08-28 | 1997-01-02 | Sumitomo Electric Industries | Verfahren zur Herstellung von supraleitenden Schichten aus supraleitendem Oxyd in denen nicht-supraleitende Gebiete vorkommen und Verfahren zur Herstellung eines Bauelements welches solche Schichten enthält |
US5828079A (en) * | 1992-06-29 | 1998-10-27 | Matsushita Electric Industrial Co., Ltd. | Field-effect type superconducting device including bi-base oxide compound containing copper |
JPH0745880A (ja) * | 1993-07-29 | 1995-02-14 | Sumitomo Electric Ind Ltd | 絶縁体薄膜と酸化物超電導薄膜との積層膜 |
CA2153189A1 (en) * | 1994-07-04 | 1996-01-05 | Takao Nakamura | Superconducting device having a superconducting channel formed of oxide superconductor material |
KR101234870B1 (ko) * | 2011-05-23 | 2013-02-19 | 한국과학기술원 | 반도체-초전도체 전이 트랜지스터 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6288381A (ja) * | 1985-10-11 | 1987-04-22 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 超導電性スイツチング装置 |
AU597951B2 (en) * | 1986-03-27 | 1990-06-14 | Monsanto Company | Enhanced protein production in bacteria by employing a novel ribosome binding site |
JP2654567B2 (ja) * | 1987-03-17 | 1997-09-17 | 株式会社 半導体エネルギー研究所 | 超電導素子の動作方法 |
DE3876228T2 (de) * | 1988-01-15 | 1993-06-03 | Ibm | Feldeffektanordnung mit supraleitendem kanal. |
-
1989
- 1989-07-26 JP JP1193102A patent/JP2862137B2/ja not_active Expired - Lifetime
- 1989-08-11 CN CN89106453A patent/CN1040463A/zh active Pending
- 1989-08-11 DE DE68927925T patent/DE68927925T2/de not_active Expired - Fee Related
- 1989-08-11 EP EP89308176A patent/EP0354804B1/en not_active Expired - Lifetime
- 1989-08-11 KR KR1019890011466A patent/KR940001296B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE68927925D1 (de) | 1997-05-07 |
JPH02138780A (ja) | 1990-05-28 |
KR940001296B1 (ko) | 1994-02-18 |
EP0354804A2 (en) | 1990-02-14 |
EP0354804A3 (en) | 1990-07-18 |
EP0354804B1 (en) | 1997-04-02 |
CN1040463A (zh) | 1990-03-14 |
DE68927925T2 (de) | 1997-07-17 |
JP2862137B2 (ja) | 1999-02-24 |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 19971231 Year of fee payment: 5 |
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LAPS | Lapse due to unpaid annual fee |