DE69318686T2 - Komplementärer Feldeffekt-Transistor - Google Patents

Komplementärer Feldeffekt-Transistor

Info

Publication number
DE69318686T2
DE69318686T2 DE1993618686 DE69318686T DE69318686T2 DE 69318686 T2 DE69318686 T2 DE 69318686T2 DE 1993618686 DE1993618686 DE 1993618686 DE 69318686 T DE69318686 T DE 69318686T DE 69318686 T2 DE69318686 T2 DE 69318686T2
Authority
DE
Germany
Prior art keywords
field effect
effect transistor
complementary field
complementary
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1993618686
Other languages
English (en)
Other versions
DE69318686D1 (de
Inventor
Richard Blaikie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Europe Ltd
Original Assignee
Hitachi Europe Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Europe Ltd filed Critical Hitachi Europe Ltd
Application granted granted Critical
Publication of DE69318686D1 publication Critical patent/DE69318686D1/de
Publication of DE69318686T2 publication Critical patent/DE69318686T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/095—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being Schottky barrier gate field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
DE1993618686 1992-12-23 1993-12-21 Komplementärer Feldeffekt-Transistor Expired - Fee Related DE69318686T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB929226847A GB9226847D0 (en) 1992-12-23 1992-12-23 Complementary conductive device

Publications (2)

Publication Number Publication Date
DE69318686D1 DE69318686D1 (de) 1998-06-25
DE69318686T2 true DE69318686T2 (de) 1998-11-12

Family

ID=10727133

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1993618686 Expired - Fee Related DE69318686T2 (de) 1992-12-23 1993-12-21 Komplementärer Feldeffekt-Transistor

Country Status (3)

Country Link
EP (1) EP0604200B1 (de)
DE (1) DE69318686T2 (de)
GB (1) GB9226847D0 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1251562A1 (de) * 2001-04-20 2002-10-23 Btg International Limited Nanoelektronische Bauelemente und Schaltungen
GB0109782D0 (en) * 2001-04-20 2001-06-13 Btg Int Ltd Nanoelectronic devices and circuits
GB2462693B (en) * 2008-07-31 2013-06-19 Pragmatic Printing Ltd Forming electrically insulative regions

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57147272A (en) * 1981-03-06 1982-09-11 Mitsubishi Electric Corp Semiconductor element
JPS6154670A (ja) * 1984-08-25 1986-03-18 Fujitsu Ltd 半導体記憶装置
JPH06101559B2 (ja) * 1985-10-04 1994-12-12 日本電信電話株式会社 超格子電子素子
JPH0695532B2 (ja) * 1985-10-16 1994-11-24 富士通株式会社 半導体装置
EP0394757B1 (de) * 1989-04-27 1998-10-07 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Halbleiterstruktur mit einer 2D-Ladungsträgerschicht und Herstellungsverfahren
JP3135939B2 (ja) * 1991-06-20 2001-02-19 富士通株式会社 Ｈｅｍｔ型半導体装置
US5243206A (en) * 1991-07-02 1993-09-07 Motorola, Inc. Logic circuit using vertically stacked heterojunction field effect transistors

Also Published As

Publication number Publication date
EP0604200A3 (en) 1995-10-11
EP0604200B1 (de) 1998-05-20
DE69318686D1 (de) 1998-06-25
GB9226847D0 (en) 1993-02-17
EP0604200A2 (de) 1994-06-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee