DE69233306D1 - Bipolartransistor mit isoliertem gate - Google Patents
Bipolartransistor mit isoliertem gateInfo
- Publication number
- DE69233306D1 DE69233306D1 DE69233306T DE69233306T DE69233306D1 DE 69233306 D1 DE69233306 D1 DE 69233306D1 DE 69233306 T DE69233306 T DE 69233306T DE 69233306 T DE69233306 T DE 69233306T DE 69233306 D1 DE69233306 D1 DE 69233306D1
- Authority
- DE
- Germany
- Prior art keywords
- bipolar transistor
- insulated gate
- insulated
- gate
- bipolar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3253948A JP2833610B2 (ja) | 1991-10-01 | 1991-10-01 | 絶縁ゲート型バイポーラトランジスタ |
JP25394891 | 1991-10-01 | ||
PCT/JP1992/001239 WO1993007645A1 (en) | 1991-10-01 | 1992-09-28 | Insulated-gate bipolar transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69233306D1 true DE69233306D1 (de) | 2004-04-01 |
DE69233306T2 DE69233306T2 (de) | 2004-11-25 |
Family
ID=17258213
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69233306T Expired - Lifetime DE69233306T2 (de) | 1991-10-01 | 1992-09-28 | Bipolartransistor mit isoliertem gate |
Country Status (5)
Country | Link |
---|---|
US (1) | US5448092A (de) |
EP (1) | EP0559910B1 (de) |
JP (1) | JP2833610B2 (de) |
DE (1) | DE69233306T2 (de) |
WO (1) | WO1993007645A1 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2286484A (en) * | 1994-02-11 | 1995-08-16 | Fuji Electric Co Ltd | Conductivity modulated semiconductor device |
JPH07235672A (ja) * | 1994-02-21 | 1995-09-05 | Mitsubishi Electric Corp | 絶縁ゲート型半導体装置およびその製造方法 |
JPH07240520A (ja) * | 1994-03-01 | 1995-09-12 | Fuji Electric Co Ltd | 絶縁ゲート型バイポーラトランジスタ |
JP3156487B2 (ja) * | 1994-03-04 | 2001-04-16 | 富士電機株式会社 | 絶縁ゲート型バイポーラトランジスタ |
EP0704889A3 (de) * | 1994-09-29 | 1998-10-21 | Siemens Aktiengesellschaft | Leistungshalbleiterbauelement mit monolithisch integriertem Messwiderstand und Verfahren zu dessen Herstellung |
US5665988A (en) * | 1995-02-09 | 1997-09-09 | Fuji Electric Co., Ltd. | Conductivity-modulation semiconductor |
CN1053527C (zh) * | 1996-05-14 | 2000-06-14 | 电子科技大学 | 绝缘栅异质结双极晶体管 |
US5796148A (en) * | 1996-05-31 | 1998-08-18 | Analog Devices, Inc. | Integrated circuits |
JP3191747B2 (ja) * | 1997-11-13 | 2001-07-23 | 富士電機株式会社 | Mos型半導体素子 |
JP4745251B2 (ja) * | 2004-12-22 | 2011-08-10 | 三菱電機株式会社 | 半導体装置 |
CN102779840B (zh) * | 2012-07-18 | 2014-10-15 | 电子科技大学 | 一种具有终端深能级杂质层的igbt |
KR20150120209A (ko) * | 2014-04-17 | 2015-10-27 | 삼성전자주식회사 | 전자 장치 및 전자 장치의 동작 방법 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4783690A (en) * | 1983-09-06 | 1988-11-08 | General Electric Company | Power semiconductor device with main current section and emulation current section |
IE55753B1 (en) * | 1983-09-06 | 1991-01-02 | Gen Electric | Power semiconductor device with main current section and emulation current section |
JPS62165964A (ja) * | 1986-01-17 | 1987-07-22 | Rohm Co Ltd | 半導体装置 |
JPH0834221B2 (ja) * | 1986-03-21 | 1996-03-29 | 日本電装株式会社 | 電流検出機能付半導体装置 |
US4962411A (en) * | 1986-03-21 | 1990-10-09 | Nippondenso Co., Ltd. | Semiconductor device with current detecting function |
JPS63104480A (ja) * | 1986-10-22 | 1988-05-09 | Fuji Electric Co Ltd | 伝導度変調型たて型mosfet |
JPS63164473A (ja) * | 1986-12-26 | 1988-07-07 | Fujitsu Ltd | 半導体装置 |
JPS63213370A (ja) * | 1987-02-28 | 1988-09-06 | Nippon Denso Co Ltd | 電力用トランジスタの保護回路 |
JP2722453B2 (ja) * | 1987-06-08 | 1998-03-04 | 三菱電機株式会社 | 半導体装置 |
JP2786196B2 (ja) * | 1987-07-21 | 1998-08-13 | 株式会社デンソー | 絶縁ゲート型半導体装置 |
JP2698645B2 (ja) * | 1988-05-25 | 1998-01-19 | 株式会社東芝 | Mosfet |
US4980740A (en) * | 1989-03-27 | 1990-12-25 | General Electric Company | MOS-pilot structure for an insulated gate transistor |
JP2858404B2 (ja) * | 1990-06-08 | 1999-02-17 | 株式会社デンソー | 絶縁ゲート型バイポーラトランジスタおよびその製造方法 |
-
1991
- 1991-10-01 JP JP3253948A patent/JP2833610B2/ja not_active Expired - Lifetime
-
1992
- 1992-09-28 EP EP92920363A patent/EP0559910B1/de not_active Expired - Lifetime
- 1992-09-28 WO PCT/JP1992/001239 patent/WO1993007645A1/ja active IP Right Grant
- 1992-09-28 DE DE69233306T patent/DE69233306T2/de not_active Expired - Lifetime
- 1992-09-28 US US08/070,362 patent/US5448092A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0559910B1 (de) | 2004-02-25 |
JP2833610B2 (ja) | 1998-12-09 |
US5448092A (en) | 1995-09-05 |
DE69233306T2 (de) | 2004-11-25 |
WO1993007645A1 (en) | 1993-04-15 |
JPH0595118A (ja) | 1993-04-16 |
EP0559910A4 (de) | 2002-01-02 |
EP0559910A1 (de) | 1993-09-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
R071 | Expiry of right |
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