DE69233363D1 - Bipolarer Transistor vom isolierten Gatetyp mit Überspannungschutz - Google Patents
Bipolarer Transistor vom isolierten Gatetyp mit ÜberspannungschutzInfo
- Publication number
- DE69233363D1 DE69233363D1 DE69233363T DE69233363T DE69233363D1 DE 69233363 D1 DE69233363 D1 DE 69233363D1 DE 69233363 T DE69233363 T DE 69233363T DE 69233363 T DE69233363 T DE 69233363T DE 69233363 D1 DE69233363 D1 DE 69233363D1
- Authority
- DE
- Germany
- Prior art keywords
- bipolar transistor
- insulated gate
- overvoltage protection
- gate type
- type bipolar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4671091 | 1991-03-12 | ||
JP3046710A JP2862027B2 (ja) | 1991-03-12 | 1991-03-12 | 絶縁ゲート型バイポーラトランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69233363D1 true DE69233363D1 (de) | 2004-07-15 |
DE69233363T2 DE69233363T2 (de) | 2005-06-02 |
Family
ID=12754916
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69233363T Expired - Lifetime DE69233363T2 (de) | 1991-03-12 | 1992-03-11 | Bipolarer Transistor vom isolierten Gatetyp mit Überspannungschutz |
Country Status (4)
Country | Link |
---|---|
US (1) | US5973338A (de) |
EP (1) | EP0503605B1 (de) |
JP (1) | JP2862027B2 (de) |
DE (1) | DE69233363T2 (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3081739B2 (ja) * | 1992-10-20 | 2000-08-28 | 三菱電機株式会社 | 絶縁ゲート型半導体装置及びその製造方法 |
JP3216315B2 (ja) * | 1993-04-02 | 2001-10-09 | 株式会社デンソー | 絶縁ゲート型バイポーラトランジスタ |
US5719412A (en) * | 1993-04-02 | 1998-02-17 | Nippondenso Co., Ltd | Insulated gate bipolar transistor |
EP0665597A1 (de) * | 1994-01-27 | 1995-08-02 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe | IGBT und Herstellungsverfahren dafür |
JP2870402B2 (ja) * | 1994-03-10 | 1999-03-17 | 株式会社デンソー | 絶縁ゲート型電界効果トランジスタ |
US5723882A (en) * | 1994-03-10 | 1998-03-03 | Nippondenso Co., Ltd. | Insulated gate field effect transistor having guard ring regions |
JP3355851B2 (ja) * | 1995-03-07 | 2002-12-09 | 株式会社デンソー | 絶縁ゲート型電界効果トランジスタ及びその製造方法 |
DE59711481D1 (de) * | 1996-02-05 | 2004-05-06 | Infineon Technologies Ag | Durch Feldeffekt steuerbares Halbleiterbauelement |
JP3918209B2 (ja) | 1996-09-11 | 2007-05-23 | 株式会社デンソー | 絶縁ゲート型バイポーラトランジスタ及びその製造方法 |
US6054752A (en) * | 1997-06-30 | 2000-04-25 | Denso Corporation | Semiconductor device |
JP4181322B2 (ja) | 1999-08-19 | 2008-11-12 | インフィネオン テクノロジーズ アクチエンゲゼルシャフト | 垂直方向に構造化された電力半導体モジュール |
JP4164962B2 (ja) | 1999-10-08 | 2008-10-15 | 株式会社デンソー | 絶縁ゲート型バイポーラトランジスタ |
JP4460741B2 (ja) * | 2000-09-27 | 2010-05-12 | 株式会社東芝 | 電力用半導体素子及びその製造方法 |
DE102004017723B4 (de) * | 2003-04-10 | 2011-12-08 | Fuji Electric Co., Ltd | In Rückwärtsrichtung sperrendes Halbleiterbauteil und Verfahren zu seiner Herstellung |
US9166048B2 (en) * | 2012-09-16 | 2015-10-20 | Sensor Electronic Technology, Inc. | Lateral/vertical semiconductor device |
US9391189B2 (en) | 2012-09-16 | 2016-07-12 | Sensor Electronic Technology, Inc. | Lateral/vertical semiconductor device |
US9660038B2 (en) | 2012-09-16 | 2017-05-23 | Sensor Electronic Technology, Inc. | Lateral/vertical semiconductor device |
JP6476317B2 (ja) * | 2015-12-01 | 2019-02-27 | シャープ株式会社 | アバランシェフォトダイオード |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4041517A (en) * | 1974-09-04 | 1977-08-09 | Tokyo Shibaura Electric Co., Ltd. | Vertical type junction field effect semiconductor device |
IE53895B1 (en) * | 1981-11-23 | 1989-04-12 | Gen Electric | Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device |
US4672407A (en) * | 1984-05-30 | 1987-06-09 | Kabushiki Kaisha Toshiba | Conductivity modulated MOSFET |
JPH07123166B2 (ja) * | 1986-11-17 | 1995-12-25 | 日産自動車株式会社 | 電導度変調形mosfet |
JP2786196B2 (ja) * | 1987-07-21 | 1998-08-13 | 株式会社デンソー | 絶縁ゲート型半導体装置 |
JPH02112285A (ja) * | 1988-10-21 | 1990-04-24 | Hitachi Ltd | 伝導度変調型mosfet |
US4994871A (en) * | 1988-12-02 | 1991-02-19 | General Electric Company | Insulated gate bipolar transistor with improved latch-up current level and safe operating area |
US5095343A (en) * | 1989-06-14 | 1992-03-10 | Harris Corporation | Power MOSFET |
EP0405200A1 (de) * | 1989-06-30 | 1991-01-02 | Asea Brown Boveri Ag | MOS-gesteuertes, bipolares Leistungshalbleiter-Bauelement |
EP0416805B1 (de) * | 1989-08-30 | 1996-11-20 | Siliconix, Inc. | Transistor mit Spannungsbegrenzungsanordnung |
EP0450082B1 (de) * | 1989-08-31 | 2004-04-28 | Denso Corporation | Bipolarer transistor mit isolierter steuerelektrode |
US5399883A (en) * | 1994-05-04 | 1995-03-21 | North Carolina State University At Raleigh | High voltage silicon carbide MESFETs and methods of fabricating same |
-
1991
- 1991-03-12 JP JP3046710A patent/JP2862027B2/ja not_active Expired - Lifetime
-
1992
- 1992-03-11 DE DE69233363T patent/DE69233363T2/de not_active Expired - Lifetime
- 1992-03-11 EP EP92104203A patent/EP0503605B1/de not_active Expired - Lifetime
-
1997
- 1997-10-08 US US08/947,402 patent/US5973338A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69233363T2 (de) | 2005-06-02 |
US5973338A (en) | 1999-10-26 |
JP2862027B2 (ja) | 1999-02-24 |
JPH04283968A (ja) | 1992-10-08 |
EP0503605A2 (de) | 1992-09-16 |
EP0503605A3 (en) | 1993-05-19 |
EP0503605B1 (de) | 2004-06-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8320 | Willingness to grant licences declared (paragraph 23) | ||
8364 | No opposition during term of opposition |