DE69224709T2 - Halbleiteranordnung mit verbesserter Durchbruchspannungs-Charakteristik - Google Patents

Halbleiteranordnung mit verbesserter Durchbruchspannungs-Charakteristik

Info

Publication number
DE69224709T2
DE69224709T2 DE69224709T DE69224709T DE69224709T2 DE 69224709 T2 DE69224709 T2 DE 69224709T2 DE 69224709 T DE69224709 T DE 69224709T DE 69224709 T DE69224709 T DE 69224709T DE 69224709 T2 DE69224709 T2 DE 69224709T2
Authority
DE
Germany
Prior art keywords
semiconductor device
breakdown voltage
voltage characteristics
improved breakdown
improved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69224709T
Other languages
English (en)
Other versions
DE69224709D1 (de
Inventor
Vladimir Nmi Rumennik
Robert W Busse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Power Integrations Inc
Original Assignee
Power Integrations Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Power Integrations Inc filed Critical Power Integrations Inc
Publication of DE69224709D1 publication Critical patent/DE69224709D1/de
Application granted granted Critical
Publication of DE69224709T2 publication Critical patent/DE69224709T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69224709T 1991-12-12 1992-11-25 Halbleiteranordnung mit verbesserter Durchbruchspannungs-Charakteristik Expired - Lifetime DE69224709T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/808,024 US5258636A (en) 1991-12-12 1991-12-12 Narrow radius tips for high voltage semiconductor devices with interdigitated source and drain electrodes

Publications (2)

Publication Number Publication Date
DE69224709D1 DE69224709D1 (de) 1998-04-16
DE69224709T2 true DE69224709T2 (de) 1998-10-29

Family

ID=25197683

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69224709T Expired - Lifetime DE69224709T2 (de) 1991-12-12 1992-11-25 Halbleiteranordnung mit verbesserter Durchbruchspannungs-Charakteristik

Country Status (4)

Country Link
US (1) US5258636A (de)
EP (1) EP0546377B1 (de)
JP (1) JP2781504B2 (de)
DE (1) DE69224709T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10238797A1 (de) * 2002-08-23 2004-03-11 Infineon Technologies Ag Kommutierfeste Diode

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DE69505348T2 (de) * 1995-02-21 1999-03-11 St Microelectronics Srl Hochspannungs-MOSFET mit Feldplatten-Elektrode und Verfahren zur Herstellung
JP3356586B2 (ja) * 1995-06-01 2002-12-16 日本電気株式会社 高耐圧横型ｍｏｓｆｅｔ半導体装置
JP3228093B2 (ja) * 1995-06-28 2001-11-12 富士電機株式会社 高耐圧ｉｃ
EP0772242B1 (de) 1995-10-30 2006-04-05 STMicroelectronics S.r.l. Leistungsbauteil in MOS-Technologie mit einer einzelnen kritischen Grösse
EP0772241B1 (de) 1995-10-30 2004-06-09 STMicroelectronics S.r.l. Leistungsbauteil hoher Dichte in MOS-Technologie
JP2755247B2 (ja) * 1996-02-28 1998-05-20 日本電気株式会社 半導体装置
US6168983B1 (en) 1996-11-05 2001-01-02 Power Integrations, Inc. Method of making a high-voltage transistor with multiple lateral conduction layers
US6639277B2 (en) 1996-11-05 2003-10-28 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
US6207994B1 (en) 1996-11-05 2001-03-27 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
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JP3142057B2 (ja) * 1997-11-13 2001-03-07 日本電気株式会社 半導体装置とその製造方法、及び駆動装置
DE69839439D1 (de) * 1998-05-26 2008-06-19 St Microelectronics Srl MOS-Technologie-Leistungsanordnung mit hoher Integrationsdichte
US6084277A (en) * 1999-02-18 2000-07-04 Power Integrations, Inc. Lateral power MOSFET with improved gate design
JP2001102569A (ja) * 1999-09-28 2001-04-13 Fuji Electric Co Ltd 半導体デバイス
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US6768171B2 (en) 2000-11-27 2004-07-27 Power Integrations, Inc. High-voltage transistor with JFET conduction channels
US6509220B2 (en) 2000-11-27 2003-01-21 Power Integrations, Inc. Method of fabricating a high-voltage transistor
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US6773997B2 (en) * 2001-07-31 2004-08-10 Semiconductor Components Industries, L.L.C. Method for manufacturing a high voltage MOSFET semiconductor device with enhanced charge controllability
US6573558B2 (en) * 2001-09-07 2003-06-03 Power Integrations, Inc. High-voltage vertical transistor with a multi-layered extended drain structure
US7786533B2 (en) 2001-09-07 2010-08-31 Power Integrations, Inc. High-voltage vertical transistor with edge termination structure
US7221011B2 (en) * 2001-09-07 2007-05-22 Power Integrations, Inc. High-voltage vertical transistor with a multi-gradient drain doping profile
US6555873B2 (en) * 2001-09-07 2003-04-29 Power Integrations, Inc. High-voltage lateral transistor with a multi-layered extended drain structure
US6635544B2 (en) * 2001-09-07 2003-10-21 Power Intergrations, Inc. Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
US6867100B2 (en) * 2001-12-28 2005-03-15 Texas Instruments Incorporated System for high-precision double-diffused MOS transistors
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US6919598B2 (en) * 2003-03-10 2005-07-19 Zia Hossain LDMOS transistor with enhanced termination region for high breakdown voltage with low on-resistance
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US6903421B1 (en) 2004-01-16 2005-06-07 System General Corp. Isolated high-voltage LDMOS transistor having a split well structure
JP4342498B2 (ja) * 2005-09-30 2009-10-14 パナソニック株式会社 横型半導体デバイス
US7829928B2 (en) * 2006-06-26 2010-11-09 System General Corp. Semiconductor structure of a high side driver and method for manufacturing the same
US7759769B2 (en) * 2006-07-20 2010-07-20 System General Corp. Semiconductor structure of a high side driver
US7589393B2 (en) * 2006-07-25 2009-09-15 System General Corporation Semiconductor structure of a high side driver for two high voltage nodes with partially linked deep wells and method for manufacturing the same
US8093621B2 (en) 2008-12-23 2012-01-10 Power Integrations, Inc. VTS insulated gate bipolar transistor
KR101371517B1 (ko) * 2007-01-12 2014-03-12 페어차일드코리아반도체 주식회사 전계집중 감소용 플로팅영역을 구비한 고전압 반도체 소자
US7557406B2 (en) 2007-02-16 2009-07-07 Power Integrations, Inc. Segmented pillar layout for a high-voltage vertical transistor
US7859037B2 (en) 2007-02-16 2010-12-28 Power Integrations, Inc. Checkerboarded high-voltage vertical transistor layout
US7595523B2 (en) 2007-02-16 2009-09-29 Power Integrations, Inc. Gate pullback at ends of high-voltage vertical transistor structure
US7468536B2 (en) 2007-02-16 2008-12-23 Power Integrations, Inc. Gate metal routing for transistor with checkerboarded layout
US8653583B2 (en) 2007-02-16 2014-02-18 Power Integrations, Inc. Sensing FET integrated with a high-voltage transistor
US7875962B2 (en) * 2007-10-15 2011-01-25 Power Integrations, Inc. Package for a power semiconductor device
JP5150389B2 (ja) * 2008-07-01 2013-02-20 シャープ株式会社 半導体装置
US7960786B2 (en) * 2008-07-09 2011-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Breakdown voltages of ultra-high voltage devices by forming tunnels
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JP5586546B2 (ja) * 2011-03-23 2014-09-10 株式会社東芝 半導体装置
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US9269704B2 (en) * 2012-05-15 2016-02-23 Nuvoton Technology Corporation Semiconductor device with embedded silicon-controlled rectifier
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10238797A1 (de) * 2002-08-23 2004-03-11 Infineon Technologies Ag Kommutierfeste Diode
DE10238797B4 (de) * 2002-08-23 2007-09-20 Infineon Technologies Ag Kommutierfeste Diode und Verfahren zu ihrer Herstellung

Also Published As

Publication number Publication date
EP0546377A3 (en) 1993-09-29
EP0546377A2 (de) 1993-06-16
US5258636A (en) 1993-11-02
JP2781504B2 (ja) 1998-07-30
EP0546377B1 (de) 1998-03-11
DE69224709D1 (de) 1998-04-16
JPH05259454A (ja) 1993-10-08

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