DE3689445D1 - Schutzschaltung für einen Bipolartransistor mit isoliertem Gate. - Google Patents

Schutzschaltung für einen Bipolartransistor mit isoliertem Gate.

Info

Publication number
DE3689445D1
DE3689445D1 DE86300766T DE3689445T DE3689445D1 DE 3689445 D1 DE3689445 D1 DE 3689445D1 DE 86300766 T DE86300766 T DE 86300766T DE 3689445 T DE3689445 T DE 3689445T DE 3689445 D1 DE3689445 D1 DE 3689445D1
Authority
DE
Germany
Prior art keywords
protection circuit
bipolar transistor
insulated gate
gate bipolar
insulated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE86300766T
Other languages
English (en)
Other versions
DE3689445T2 (de
Inventor
Chihiro Okado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP60023334A external-priority patent/JPS61185064A/ja
Priority claimed from JP60092870A external-priority patent/JPH0685496B2/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3689445D1 publication Critical patent/DE3689445D1/de
Application granted granted Critical
Publication of DE3689445T2 publication Critical patent/DE3689445T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
DE3689445T 1985-02-08 1986-02-05 Schutzschaltung für einen Bipolartransistor mit isoliertem Gate. Expired - Lifetime DE3689445T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60023334A JPS61185064A (ja) 1985-02-08 1985-02-08 静電誘導形自己消弧素子の駆動回路
JP60092870A JPH0685496B2 (ja) 1985-04-30 1985-04-30 静電誘導形自己消弧素子のゲート駆動回路

Publications (2)

Publication Number Publication Date
DE3689445D1 true DE3689445D1 (de) 1994-02-10
DE3689445T2 DE3689445T2 (de) 1994-07-14

Family

ID=26360682

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3689445T Expired - Lifetime DE3689445T2 (de) 1985-02-08 1986-02-05 Schutzschaltung für einen Bipolartransistor mit isoliertem Gate.

Country Status (6)

Country Link
US (1) US4721869A (de)
EP (1) EP0190925B1 (de)
KR (1) KR900008276B1 (de)
CN (1) CN1006266B (de)
AU (2) AU568446B2 (de)
DE (1) DE3689445T2 (de)

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US5926354A (en) * 1997-06-11 1999-07-20 International Rectifier Corporation Solid state relay and circuit breaker
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US7035064B2 (en) 1998-05-29 2006-04-25 Semikron Elektronik Gmbh Method and circuit arrangement with adaptive overload protection for power switching devices
DE19849097A1 (de) * 1998-10-24 2000-04-27 Abb Daimler Benz Transp Verfahren zur Schaltzustandsüberwachung eines IGBT und Vorrichtung zur Durchführung des Verfahrens
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JP3932841B2 (ja) 2001-08-29 2007-06-20 株式会社日立製作所 半導体電力変換装置
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US7236340B2 (en) * 2002-02-11 2007-06-26 International Rectifier Corporation Gate control circuit for prevention of turn-off avalanche of power MOSFETs
FR2851056B1 (fr) * 2003-02-10 2005-04-08 Alstom Procede et systeme de commande d'un composant electronique de puissance, et support d'enregistrement d'informations comportant des instructions pour l'execution du procede
JP4223331B2 (ja) * 2003-06-13 2009-02-12 株式会社日立製作所 電力制御用半導体素子の保護装置及びそれを備えた電力変換装置
US7342762B2 (en) * 2005-11-10 2008-03-11 Littelfuse, Inc. Resettable circuit protection apparatus
EP2501042B1 (de) * 2011-03-16 2013-12-18 CT-Concept Holding GmbH Ansteuerschaltung und Verfahren zur Ansteuerung eines Leistungshalbleiterschalters
US8598921B2 (en) 2006-11-22 2013-12-03 Ct-Concept Holding Gmbh Control circuit and method for controlling a power semiconductor switch
US7570101B1 (en) 2008-02-27 2009-08-04 The United States Of America As Represented By The United States Department Of Energy Advanced insulated gate bipolar transistor gate drive
JP4333802B1 (ja) * 2008-03-18 2009-09-16 トヨタ自動車株式会社 インバータの駆動装置
US8264256B2 (en) * 2008-10-15 2012-09-11 Infineon Technologies Austria Ag Driver and method for driving a device
FR2947973B1 (fr) * 2009-07-07 2011-06-17 Schneider Toshiba Inverter Dispositif de commande d'un transistor de puissance
JP2012090435A (ja) * 2010-10-20 2012-05-10 Mitsubishi Electric Corp 駆動回路及びこれを備える半導体装置
US20120248864A1 (en) * 2011-02-28 2012-10-04 General Electric Company, A New York Corporation System and Method for Operating Inverters
US9048831B2 (en) * 2012-07-13 2015-06-02 General Electric Company Systems and methods for regulating semiconductor devices
US9071245B2 (en) * 2013-04-24 2015-06-30 Hamilton Sundstrand Corporation Solid state power controller gate control
EP2933646B1 (de) * 2014-04-17 2019-04-17 Siemens Aktiengesellschaft Präzisionsmessung von Spannungsabfall über ein Halbleiterschaltelement
US9322852B2 (en) 2014-07-15 2016-04-26 Ford Global Technologies, Llc Gate drive under-voltage detection
US9720030B2 (en) 2015-06-08 2017-08-01 Nxp Usa, Inc. Systems and methods for testing a clamp function for insulated gate bipolar transistors
CN105099422A (zh) * 2015-08-19 2015-11-25 深圳市华星光电技术有限公司 光耦隔离开关电路
JP6610154B2 (ja) * 2015-10-15 2019-11-27 Ｔｄｋ株式会社 スイッチ駆動装置およびスイッチ駆動方法
US9634657B1 (en) 2015-12-01 2017-04-25 General Electric Company System and method for overcurrent protection for a field controlled switch
JP6805496B2 (ja) * 2016-01-15 2020-12-23 富士電機株式会社 半導体装置
CN107294364B (zh) 2016-03-30 2020-08-14 通用电气公司 开关系统、开关组件及故障保护方法
CN105978542A (zh) * 2016-06-17 2016-09-28 张家港市泓溢电源科技有限公司 小功率igbt管驱动电路
JP6312946B1 (ja) * 2017-03-30 2018-04-18 三菱電機株式会社 電力用半導体素子の駆動回路およびモータ駆動装置
FR3065340A1 (fr) * 2017-04-18 2018-10-19 Valeo Systemes Thermiques Protection de mosfets de puissance

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US4591734A (en) * 1984-04-27 1986-05-27 General Electric Company Integratable circuit for controlling turn-off voltage rate-of-change of non-regenerative voltage-controlled switching semiconductor devices
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Also Published As

Publication number Publication date
AU568446B2 (en) 1987-12-24
AU1371288A (en) 1988-06-23
US4721869A (en) 1988-01-26
EP0190925B1 (de) 1993-12-29
AU5326086A (en) 1986-08-14
CN86101151A (zh) 1986-11-19
EP0190925A2 (de) 1986-08-13
KR860006841A (ko) 1986-09-15
CN1006266B (zh) 1989-12-27
EP0190925A3 (en) 1988-03-30
AU593729B2 (en) 1990-02-15
DE3689445T2 (de) 1994-07-14
KR900008276B1 (ko) 1990-11-10

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Legal Events

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8320 Willingness to grant licences declared (paragraph 23)