DE3689931D1 - Schnell schaltende laterale Transistoren mit isoliertem Gate. - Google Patents

Schnell schaltende laterale Transistoren mit isoliertem Gate.

Info

Publication number
DE3689931D1
DE3689931D1 DE3689931T DE3689931T DE3689931D1 DE 3689931 D1 DE3689931 D1 DE 3689931D1 DE 3689931 T DE3689931 T DE 3689931T DE 3689931 T DE3689931 T DE 3689931T DE 3689931 D1 DE3689931 D1 DE 3689931D1
Authority
DE
Germany
Prior art keywords
insulated gate
fast switching
lateral transistors
switching lateral
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3689931T
Other languages
English (en)
Other versions
DE3689931T2 (de
Inventor
Sel Colak
Vladimir Rumennik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE3689931D1 publication Critical patent/DE3689931D1/de
Application granted granted Critical
Publication of DE3689931T2 publication Critical patent/DE3689931T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41716—Cathode or anode electrodes for thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
DE19863689931 1985-11-27 1986-11-24 Schnell schaltende laterale Transistoren mit isoliertem Gate. Expired - Fee Related DE3689931T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US80278185A 1985-11-27 1985-11-27

Publications (2)

Publication Number Publication Date
DE3689931D1 true DE3689931D1 (de) 1994-07-28
DE3689931T2 DE3689931T2 (de) 1995-02-02

Family

ID=25184664

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19863650606 Expired - Fee Related DE3650606T2 (de) 1985-11-27 1986-11-24 Schnellschaltender, lateraler Feldeffekttransistor mit isolierter Steuerelektrode
DE19863689931 Expired - Fee Related DE3689931T2 (de) 1985-11-27 1986-11-24 Schnell schaltende laterale Transistoren mit isoliertem Gate.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE19863650606 Expired - Fee Related DE3650606T2 (de) 1985-11-27 1986-11-24 Schnellschaltender, lateraler Feldeffekttransistor mit isolierter Steuerelektrode

Country Status (4)

Country Link
EP (2) EP0228107B1 (de)
JP (1) JPH0732249B2 (de)
CA (1) CA1252225A (de)
DE (2) DE3650606T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6380569A (ja) * 1986-09-24 1988-04-11 Fuji Electric Co Ltd 伝導度変調型横型ｍｏｓ−ｆｅｔ
JPS63173365A (ja) * 1986-11-26 1988-07-16 ゼネラル・エレクトリック・カンパニイ ラテラル形絶縁ゲート半導体装置とその製法
JPS6459947A (en) * 1987-08-31 1989-03-07 Toshiba Corp Semiconductor device
JPH0680832B2 (ja) * 1987-09-30 1994-10-12 日本電気株式会社 半導体装置
US4939566A (en) * 1987-10-30 1990-07-03 North American Philips Corporation Semiconductor switch with parallel DMOS and IGT
US4926074A (en) * 1987-10-30 1990-05-15 North American Philips Corporation Semiconductor switch with parallel lateral double diffused MOS transistor and lateral insulated gate transistor
JP2728453B2 (ja) * 1988-09-14 1998-03-18 株式会社日立製作所 出力回路
JP2901621B2 (ja) * 1988-10-19 1999-06-07 株式会社日立製作所 導電変調型ｍｏｓデバイス
EP0371785B1 (de) * 1988-11-29 1996-05-01 Kabushiki Kaisha Toshiba Lateraler Leitfähigkeitsmodulations-MOSFET
US5017992A (en) * 1989-03-29 1991-05-21 Asea Brown Boveri Ltd. High blocking-capacity semiconductor component
US5027177A (en) * 1989-07-24 1991-06-25 Hughes Aircraft Company Floating base lateral bipolar phototransistor with field effect gate voltage control
US5378912A (en) * 1993-11-10 1995-01-03 Philips Electronics North America Corporation Lateral semiconductor-on-insulator (SOI) semiconductor device having a lateral drift region
DE19538090A1 (de) * 1995-10-13 1997-04-17 Asea Brown Boveri Leistungshalbleiterelement
JP3918209B2 (ja) * 1996-09-11 2007-05-23 株式会社デンソー 絶縁ゲート型バイポーラトランジスタ及びその製造方法
WO2001075979A1 (de) 2000-03-31 2001-10-11 Ihp Gmbh-Innovations For High Performance Microelectronics Cmos-kompatibler lateraler dmos-transistor und verfahren zur herstellung eines derartigen transistors
DE10057611C2 (de) * 2000-11-21 2002-10-24 Infineon Technologies Ag Laterales Halbleiterbauelement
GB2374456A (en) * 2000-12-09 2002-10-16 Esm Ltd High-voltage metal oxide semiconductor device and method of forming the device
JP2006287250A (ja) * 2006-05-29 2006-10-19 Rohm Co Ltd 二重拡散型ｍｏｓｆｅｔおよびこれを用いた半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2706031A1 (de) * 1977-02-12 1978-08-17 Engl Walter L Prof Dr Rer Nat Integrierte schaltung mit einem thyristor
JPS55128870A (en) * 1979-03-26 1980-10-06 Semiconductor Res Found Electrostatic induction thyristor and semiconductor device
US4300150A (en) * 1980-06-16 1981-11-10 North American Philips Corporation Lateral double-diffused MOS transistor device
EP0273030A3 (de) * 1982-12-13 1988-09-21 General Electric Company Laterale Gleichrichter mit isoliertem Gate
DE3370410D1 (en) * 1982-12-27 1987-04-23 Philips Nv Lateral dmos transistor device having an injector region
GB2173037A (en) * 1985-03-29 1986-10-01 Philips Electronic Associated Semiconductor devices employing conductivity modulation

Also Published As

Publication number Publication date
EP0228107B1 (de) 1994-06-22
DE3689931T2 (de) 1995-02-02
DE3650606D1 (de) 1997-04-30
EP0522670A1 (de) 1993-01-13
EP0522670B1 (de) 1997-03-26
DE3650606T2 (de) 1997-09-11
EP0228107A2 (de) 1987-07-08
JPH0732249B2 (ja) 1995-04-10
JPS62131580A (ja) 1987-06-13
EP0228107A3 (en) 1988-08-31
CA1252225A (en) 1989-04-04

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8339 Ceased/non-payment of the annual fee