DE3579154D1 - Sperrschicht-fet mit niedrigem leckstrom. - Google Patents

Sperrschicht-fet mit niedrigem leckstrom.

Info

Publication number
DE3579154D1
DE3579154D1 DE8585905161T DE3579154T DE3579154D1 DE 3579154 D1 DE3579154 D1 DE 3579154D1 DE 8585905161 T DE8585905161 T DE 8585905161T DE 3579154 T DE3579154 T DE 3579154T DE 3579154 D1 DE3579154 D1 DE 3579154D1
Authority
DE
Germany
Prior art keywords
fet
low leakage
barrier lay
lay
barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585905161T
Other languages
English (en)
Inventor
F Lapham
Paul Brokaw
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Analog Devices Inc
Original Assignee
Analog Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Analog Devices Inc filed Critical Analog Devices Inc
Application granted granted Critical
Publication of DE3579154D1 publication Critical patent/DE3579154D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE8585905161T 1984-10-05 1985-09-30 Sperrschicht-fet mit niedrigem leckstrom. Expired - Fee Related DE3579154D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US65827084A 1984-10-05 1984-10-05
PCT/US1985/001908 WO1986002203A1 (en) 1984-10-05 1985-09-30 Low-leakage jfet

Publications (1)

Publication Number Publication Date
DE3579154D1 true DE3579154D1 (de) 1990-09-13

Family

ID=24640575

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585905161T Expired - Fee Related DE3579154D1 (de) 1984-10-05 1985-09-30 Sperrschicht-fet mit niedrigem leckstrom.

Country Status (6)

Country Link
US (1) US5319227A (de)
EP (1) EP0197116B1 (de)
JP (1) JPS62500343A (de)
CA (1) CA1233913A (de)
DE (1) DE3579154D1 (de)
WO (1) WO1986002203A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62196360U (de) * 1986-06-05 1987-12-14
USRE34821E (en) * 1986-11-17 1995-01-03 Linear Technology Corporation High speed junction field effect transistor for use in bipolar integrated circuits
EP0268426A3 (de) * 1986-11-17 1989-03-15 Linear Technology Corporation Hochgeschwindigkeits-Feldeffekttransistor mit pn-Übergang zur Verwendung in bipolaren integrierten Schaltungen
JP3812421B2 (ja) * 2001-06-14 2006-08-23 住友電気工業株式会社 横型接合型電界効果トランジスタ
JP4751308B2 (ja) * 2006-12-18 2011-08-17 住友電気工業株式会社 横型接合型電界効果トランジスタ
US7977714B2 (en) * 2007-10-19 2011-07-12 International Business Machines Corporation Wrapped gate junction field effect transistor
US9882012B2 (en) 2013-05-13 2018-01-30 Taiwan Semiconductor Manufacturing Company, Ltd. Junction gate field-effect transistor (JFET) having source/drain and gate isolation regions
KR101716957B1 (ko) * 2014-07-02 2017-03-15 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 정션 게이트 전계효과 트랜지스터, 반도체 디바이스 및 제조 방법
US10886418B2 (en) 2019-02-21 2021-01-05 Texas Instruments Incorporated Split-gate JFET with field plate

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4107726A (en) * 1977-01-03 1978-08-15 Raytheon Company Multilayer interconnected structure for semiconductor integrated circuit
US4176368A (en) * 1978-10-10 1979-11-27 National Semiconductor Corporation Junction field effect transistor for use in integrated circuits
FR2472838A1 (fr) * 1979-12-26 1981-07-03 Radiotechnique Compelec Transistor a effet de champ du type a jonction et son procede de realisation
US4322738A (en) * 1980-01-21 1982-03-30 Texas Instruments Incorporated N-Channel JFET device compatible with existing bipolar integrated circuit processing techniques
JPS5833833A (ja) * 1981-08-24 1983-02-28 Hitachi Ltd 半導体装置の電極形成法
US4456918A (en) * 1981-10-06 1984-06-26 Harris Corporation Isolated gate JFET structure
JPS594086A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 半導体装置
JPS59121834A (ja) * 1982-12-28 1984-07-14 Oki Electric Ind Co Ltd 電極配線の製造方法

Also Published As

Publication number Publication date
JPS62500343A (ja) 1987-02-05
WO1986002203A1 (en) 1986-04-10
CA1233913A (en) 1988-03-08
EP0197116A1 (de) 1986-10-15
EP0197116B1 (de) 1990-08-08
US5319227A (en) 1994-06-07

Similar Documents

Publication Publication Date Title
DE3586903D1 (de) Photolithographisches material mit sperrschichtkombination.
DE3683741D1 (de) Kuehlkanal mit faecherfoermigem ausgang.
DE3583490D1 (de) Mikroverkapselte pyrethroide.
DE3584457D1 (de) Injektionsvorrichtung.
FI845177L (fi) Intraokulaer lins.
NO167321C (no) Roerkobling.
DE3581728D1 (de) Durchflusskontrollgeraet mit leckstromsperre.
FI850465L (fi) Tak- och vaeggkonstruktion.
DE3586502D1 (de) Schaltungsumschaltanordnungen.
DE3587297D1 (de) Waelzlager mit dichtungsvorrichtung.
DE3582724D1 (de) Brennstoffverdampfer.
DE3582142D1 (de) Einfarbige kathodenstrahlroehre.
DE3581230D1 (de) Magneto-optisches speicherelement.
DE3689782D1 (de) Anordnung mit isoliertem Gate.
DE3577982D1 (de) System mit doppeltem schwingungsanschlag.
DE3578722D1 (de) Lichtemittierendes halbleiterelement mit sperrschicht.
FR2557774B1 (fr) Couche-culotte a etancheite amelioree.
DE3578591D1 (de) Farbbildroehre.
DE3853026D1 (de) Transistor mit heissen Elektronen.
DE3683597D1 (de) Torschaltung.
DE3575237D1 (de) Hall-beschleuniger mit vorionisationsentladung.
ATA906284A (de) Polyolefin mit guten haftungseigenschaften
DE3580735D1 (de) Logische gate-schaltung.
DE3586798D1 (de) Bauelemente mit sperrsystem.
DE3381633D1 (de) Gleichrichter mit isoliertem gate mit verbesserter strombelastbarkeit.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee