DE3578722D1 - Lichtemittierendes halbleiterelement mit sperrschicht. - Google Patents

Lichtemittierendes halbleiterelement mit sperrschicht.

Info

Publication number
DE3578722D1
DE3578722D1 DE8585901581T DE3578722T DE3578722D1 DE 3578722 D1 DE3578722 D1 DE 3578722D1 DE 8585901581 T DE8585901581 T DE 8585901581T DE 3578722 T DE3578722 T DE 3578722T DE 3578722 D1 DE3578722 D1 DE 3578722D1
Authority
DE
Germany
Prior art keywords
barrier
light
semiconductor element
emitting semiconductor
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585901581T
Other languages
English (en)
Inventor
Hiromasa Ito
Humio Inaba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tohoku University NUC
Original Assignee
Tohoku University NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku University NUC filed Critical Tohoku University NUC
Application granted granted Critical
Publication of DE3578722D1 publication Critical patent/DE3578722D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H01S5/18347—Mesa comprising active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06243—Controlling other output parameters than intensity or frequency controlling the position or direction of the emitted beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3428—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer orientation perpendicular to the substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
DE8585901581T 1984-03-28 1985-03-28 Lichtemittierendes halbleiterelement mit sperrschicht. Expired - Lifetime DE3578722D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5815984A JPH0750807B2 (ja) 1984-03-28 1984-03-28 接合型半導体発光素子
PCT/JP1985/000152 WO1985004531A1 (en) 1984-03-28 1985-03-28 Junction semiconductor light-emitting element

Publications (1)

Publication Number Publication Date
DE3578722D1 true DE3578722D1 (de) 1990-08-23

Family

ID=13076206

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585901581T Expired - Lifetime DE3578722D1 (de) 1984-03-28 1985-03-28 Lichtemittierendes halbleiterelement mit sperrschicht.

Country Status (5)

Country Link
US (1) US4742378A (de)
EP (1) EP0177617B1 (de)
JP (1) JPH0750807B2 (de)
DE (1) DE3578722D1 (de)
WO (1) WO1985004531A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6179280A (ja) * 1984-09-27 1986-04-22 Agency Of Ind Science & Technol 面発光型半導体レ−ザ装置及びその製造方法
CA1271550C (en) * 1985-12-24 1990-07-10 SEMICONDUCTOR LUMINESCENT DEVICE, ILLUMINATING VERTICALLY
JPS6371826A (ja) * 1986-09-16 1988-04-01 Hitachi Ltd 光半導体装置
GB2203894B (en) * 1987-03-03 1990-11-21 Fumio Inaba Surface emission type semiconductor light-emitting device
EP0410307B1 (de) * 1989-07-20 1994-06-01 Canon Kabushiki Kaisha Leuchtemittierende Vorrichtung und Verfahren zu deren Herstellung
US5289018A (en) * 1990-08-14 1994-02-22 Canon Kabushiki Kaisha Light emitting device utilizing cavity quantum electrodynamics
FR2667207B1 (fr) * 1990-09-21 1993-06-25 Thomson Csf Convertisseur de frequences lumineuses.
FR2671238B1 (fr) * 1990-12-28 1993-03-12 Thomson Csf Procede de realisation de lasers semiconducteurs a emission de surface, et lasers obtenus par le procede.
US5136603A (en) * 1991-04-29 1992-08-04 At&T Bell Laboratories Self-monitoring semiconductor laser device
JP2812024B2 (ja) * 1991-10-17 1998-10-15 日本電気株式会社 面発光素子の製造方法
JPH0645642A (ja) * 1992-07-22 1994-02-18 Mitsubishi Precision Co Ltd スーパールミネッセントダイオード及びその製造方法
US5475701A (en) * 1993-12-29 1995-12-12 Honeywell Inc. Integrated laser power monitor
WO2000045443A1 (en) * 1999-01-28 2000-08-03 Nova Crystals, Inc. High performance light emitting diodes
DE19963550B4 (de) * 1999-12-22 2004-05-06 Epigap Optoelektronik Gmbh Bipolare Beleuchtungsquelle aus einem einseitig kontaktierten, selbstbündelnden Halbleiterkörper
DE60039535D1 (de) * 2000-10-20 2008-08-28 Josuke Nakata Lichtemittierdende bzw. lichtempfindliche halbleiteranordnung und ihre herstellungsmethode
US6528827B2 (en) 2000-11-10 2003-03-04 Optolynx, Inc. MSM device and method of manufacturing same
JP3928695B2 (ja) * 2001-03-30 2007-06-13 セイコーエプソン株式会社 面発光型の半導体発光装置およびその製造方法
JP4861887B2 (ja) * 2007-04-20 2012-01-25 日本オプネクスト株式会社 半導体受光装置、光受信モジュールおよび半導体受光装置の製造方法
TWI397229B (zh) * 2007-11-28 2013-05-21 Chun Chu Yang 同軸長線形結構雷射二極體組配的發光裝置及其製造方法
US8792528B2 (en) * 2012-05-09 2014-07-29 Wisconsin Alumni Research Foundation Semiconductor microtube lasers
EP2802046B1 (de) * 2013-05-08 2022-11-23 Camlin Technologies (Switzerland) Limited Lichtführung für Vertikalresonator-Oberflächenemissionslaser

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4947995A (de) * 1972-07-10 1974-05-09
JPS5367391A (en) * 1976-11-29 1978-06-15 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device
US4309670A (en) * 1979-09-13 1982-01-05 Xerox Corporation Transverse light emitting electroluminescent devices
US4611222A (en) * 1979-10-12 1986-09-09 Westinghouse Electric Corp. Solid-state switch
JPS5791574A (en) * 1980-11-28 1982-06-07 Nec Corp Light emitting diode
JPS57152178A (en) * 1981-03-17 1982-09-20 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light emitting device with super lattice structure
JPS57176785A (en) * 1981-04-22 1982-10-30 Hitachi Ltd Semiconductor laser device
JPS57199288A (en) * 1981-06-01 1982-12-07 Mitsubishi Electric Corp Laser diode
JPS58135690A (ja) * 1981-11-07 1983-08-12 Agency Of Ind Science & Technol 垂直発振型半導体レ−ザ
JPS5936988A (ja) * 1982-08-26 1984-02-29 Agency Of Ind Science & Technol 垂直発振型半導体レ−ザ
JPS59152684A (ja) * 1983-02-21 1984-08-31 Nec Corp 量子井戸型面発光半導体レ−ザ
JPS59154087A (ja) * 1983-02-22 1984-09-03 Nec Corp 分布帰還型面発光半導体レ−ザ

Also Published As

Publication number Publication date
EP0177617A4 (de) 1986-11-04
JPH0750807B2 (ja) 1995-05-31
EP0177617B1 (de) 1990-07-18
US4742378A (en) 1988-05-03
EP0177617A1 (de) 1986-04-16
JPS60202979A (ja) 1985-10-14
WO1985004531A1 (en) 1985-10-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee