DE69526534T2 - Bipolartransistor mit isoliertem Gate - Google Patents

Bipolartransistor mit isoliertem Gate

Info

Publication number
DE69526534T2
DE69526534T2 DE69526534T DE69526534T DE69526534T2 DE 69526534 T2 DE69526534 T2 DE 69526534T2 DE 69526534 T DE69526534 T DE 69526534T DE 69526534 T DE69526534 T DE 69526534T DE 69526534 T2 DE69526534 T2 DE 69526534T2
Authority
DE
Germany
Prior art keywords
bipolar transistor
insulated gate
gate bipolar
insulated
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69526534T
Other languages
English (en)
Other versions
DE69526534D1 (de
Inventor
Tomoyuki Yamazaki
Shigeyuki Obinata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of DE69526534D1 publication Critical patent/DE69526534D1/de
Application granted granted Critical
Publication of DE69526534T2 publication Critical patent/DE69526534T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
DE69526534T 1994-03-04 1995-03-02 Bipolartransistor mit isoliertem Gate Expired - Lifetime DE69526534T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03398594A JP3156487B2 (ja) 1994-03-04 1994-03-04 絶縁ゲート型バイポーラトランジスタ

Publications (2)

Publication Number Publication Date
DE69526534D1 DE69526534D1 (de) 2002-06-06
DE69526534T2 true DE69526534T2 (de) 2002-11-28

Family

ID=12401779

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69526534T Expired - Lifetime DE69526534T2 (de) 1994-03-04 1995-03-02 Bipolartransistor mit isoliertem Gate

Country Status (4)

Country Link
US (1) US5557128A (de)
EP (1) EP0670601B1 (de)
JP (1) JP3156487B2 (de)
DE (1) DE69526534T2 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5883402A (en) * 1995-11-06 1999-03-16 Kabushiki Kaisha Toshiba Semiconductor device and protection method
US5798538A (en) * 1995-11-17 1998-08-25 International Rectifier Corporation IGBT with integrated control
DE19640307C2 (de) * 1996-09-30 2000-10-12 Siemens Ag Durch Feldeffekt steuerbares Halbleiterbauelement
JPH10116917A (ja) * 1996-10-14 1998-05-06 Sharp Corp パワートランジスタ
DE19727676A1 (de) * 1997-06-30 1999-01-07 Asea Brown Boveri MOS gesteuertes Leistungshalbleiterbauelement
JP4431761B2 (ja) * 1998-01-27 2010-03-17 富士電機システムズ株式会社 Ｍｏｓ型半導体装置
US6011280A (en) * 1998-06-26 2000-01-04 Delco Electronics Corporation IGBT power device with improved resistance to reverse power pulses
JP4023035B2 (ja) * 1999-07-02 2007-12-19 松下電器産業株式会社 半導体装置及びその製造方法
US6486034B1 (en) * 2001-07-20 2002-11-26 Taiwan Semiconductor Manufacturing Company Method of forming LDMOS device with double N-layering
JP2004319861A (ja) * 2003-04-18 2004-11-11 Renesas Technology Corp 半導体装置
US7157785B2 (en) * 2003-08-29 2007-01-02 Fuji Electric Device Technology Co., Ltd. Semiconductor device, the method of manufacturing the same, and two-way switching device using the semiconductor devices
US20060197153A1 (en) * 2005-02-23 2006-09-07 Chih-Feng Huang Vertical transistor with field region structure
JP5147203B2 (ja) * 2006-06-30 2013-02-20 オンセミコンダクター・トレーディング・リミテッド 絶縁ゲート型半導体装置
JP5298521B2 (ja) * 2007-10-15 2013-09-25 富士電機株式会社 半導体装置
JP4905559B2 (ja) 2009-01-27 2012-03-28 株式会社デンソー 半導体装置
JP4877337B2 (ja) 2009-02-17 2012-02-15 トヨタ自動車株式会社 半導体装置
WO2010109596A1 (ja) 2009-03-24 2010-09-30 トヨタ自動車株式会社 半導体装置
JP5453903B2 (ja) * 2009-04-28 2014-03-26 富士電機株式会社 ワイドバンドギャップ半導体装置
WO2011138832A1 (ja) * 2010-05-07 2011-11-10 トヨタ自動車株式会社 半導体装置
JP5668499B2 (ja) * 2011-01-27 2015-02-12 株式会社デンソー 半導体装置
JP5720775B2 (ja) 2011-04-04 2015-05-20 富士電機株式会社 パワースイッチのウェハ試験方法
CN104350275B (zh) 2012-08-30 2017-09-22 富士电机株式会社 点火器、点火器的控制方法以及内燃机用点火装置
JP2015122442A (ja) * 2013-12-24 2015-07-02 本田技研工業株式会社 半導体装置
JP6320808B2 (ja) * 2014-03-19 2018-05-09 富士電機株式会社 トレンチｍｏｓ型半導体装置
CN110444589B (zh) * 2019-08-29 2021-03-16 电子科技大学 一种具有过流保护功能的igbt
CN110649093A (zh) * 2019-10-31 2020-01-03 吉林华微电子股份有限公司 一种igbt芯片及半导体功率模块

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4136354A (en) * 1977-09-15 1979-01-23 National Semiconductor Corporation Power transistor including a sense emitter and a reference emitter for enabling power dissipation to be limited to less than a destructive level
JPH061833B2 (ja) * 1982-11-11 1994-01-05 株式会社東芝 Ｍｏｓ形半導体装置
US4783690A (en) * 1983-09-06 1988-11-08 General Electric Company Power semiconductor device with main current section and emulation current section
DE3856174T2 (de) * 1987-10-27 1998-09-03 Nec Corp Halbleiteranordnung mit einem isolierten vertikalen Leistungs-MOSFET.
JP2876694B2 (ja) * 1990-03-20 1999-03-31 富士電機株式会社 電流検出端子を備えたｍｏｓ型半導体装置
JPH045864A (ja) * 1990-04-23 1992-01-09 Toshiba Corp 半導体装置
JP3180831B2 (ja) * 1991-03-22 2001-06-25 富士電機株式会社 絶縁ゲート制御半導体装置
JP2973588B2 (ja) * 1991-06-10 1999-11-08 富士電機株式会社 Ｍｏｓ型半導体装置
JP2833610B2 (ja) * 1991-10-01 1998-12-09 株式会社デンソー 絶縁ゲート型バイポーラトランジスタ
JP3182848B2 (ja) * 1992-03-24 2001-07-03 富士電機株式会社 半導体装置

Also Published As

Publication number Publication date
JPH07245394A (ja) 1995-09-19
JP3156487B2 (ja) 2001-04-16
DE69526534D1 (de) 2002-06-06
US5557128A (en) 1996-09-17
EP0670601B1 (de) 2002-05-02
EP0670601A2 (de) 1995-09-06
EP0670601A3 (de) 1995-10-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJI ELECTRIC SYSTEMS CO., LTD., TOKYO/TOKIO, JP

8320 Willingness to grant licences declared (paragraph 23)