DE3785196D1 - Bipolartransistor mit heterouebergang. - Google Patents

Bipolartransistor mit heterouebergang.

Info

Publication number
DE3785196D1
DE3785196D1 DE8787907979T DE3785196T DE3785196D1 DE 3785196 D1 DE3785196 D1 DE 3785196D1 DE 8787907979 T DE8787907979 T DE 8787907979T DE 3785196 T DE3785196 T DE 3785196T DE 3785196 D1 DE3785196 D1 DE 3785196D1
Authority
DE
Germany
Prior art keywords
heterou
transition
bipolar transistor
bipolar
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787907979T
Other languages
English (en)
Other versions
DE3785196T2 (de
Inventor
Tomoyoshi Mishima
Junichi Kasai
Yoshimasa Murayama
Yoshifumi Katayama
Yasuhiro Shiraki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3785196D1 publication Critical patent/DE3785196D1/de
Publication of DE3785196T2 publication Critical patent/DE3785196T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/881—Resonant tunnelling transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/755—Nanosheet or quantum barrier/well, i.e. layer structure having one dimension or thickness of 100 nm or less
    • Y10S977/759—Quantum well dimensioned for intersubband transitions, e.g. for use in unipolar light emitters or quantum well infrared photodetectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
DE8787907979T 1986-12-03 1987-12-02 Bipolartransistor mit heterouebergang. Expired - Lifetime DE3785196T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61286605A JPS63140570A (ja) 1986-12-03 1986-12-03 半導体装置
PCT/JP1987/000935 WO1988004474A1 (fr) 1986-12-03 1987-12-02 Transistor bipolaire a heterojonction

Publications (2)

Publication Number Publication Date
DE3785196D1 true DE3785196D1 (de) 1993-05-06
DE3785196T2 DE3785196T2 (de) 1993-07-15

Family

ID=17706577

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787907979T Expired - Lifetime DE3785196T2 (de) 1986-12-03 1987-12-02 Bipolartransistor mit heterouebergang.

Country Status (6)

Country Link
US (1) US5003366A (de)
EP (1) EP0292568B1 (de)
JP (1) JPS63140570A (de)
KR (1) KR910006246B1 (de)
DE (1) DE3785196T2 (de)
WO (1) WO1988004474A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2288691B (en) * 1991-10-02 1996-06-12 Mitsubishi Electric Corp Bipolar semiconductor device and production method therfor
JP2731089B2 (ja) * 1991-10-02 1998-03-25 三菱電機株式会社 高速動作半導体装置およびその製造方法
US5399880A (en) * 1993-08-10 1995-03-21 At&T Corp. Phototransistor with quantum well base structure
JP3087671B2 (ja) * 1996-12-12 2000-09-11 日本電気株式会社 バイポーラトランジスタおよびその製造方法
US5698862A (en) * 1996-12-13 1997-12-16 National Science Counsel Of Republic Of China Structure of the heterostructure-emitter and heterostructure-base transistor (HEHBT)
US6841795B2 (en) 2002-10-25 2005-01-11 The University Of Connecticut Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation
US6974969B2 (en) 2003-01-13 2005-12-13 The University Of Connecticut P-type quantum-well-base bipolar transistor device employing interdigitated base and emitter formed with a capping layer
US6781161B1 (en) 2003-04-09 2004-08-24 Teccor Electronics, Lp Non-gated thyristor device
US7696536B1 (en) * 2003-08-22 2010-04-13 The Board Of Trustees Of The University Of Illinois Semiconductor method and device
US7354780B2 (en) 2003-08-22 2008-04-08 The Board Of Trustees Of The University Of Illinois Semiconductor light emitting devices and methods
US7286583B2 (en) * 2003-08-22 2007-10-23 The Board Of Trustees Of The University Of Illinois Semiconductor laser devices and methods
US7998807B2 (en) * 2003-08-22 2011-08-16 The Board Of Trustees Of The University Of Illinois Method for increasing the speed of a light emitting biopolar transistor device
US7535034B2 (en) * 2006-02-27 2009-05-19 The Board Of Trustees Of The University Of Illinois PNP light emitting transistor and method
US7711015B2 (en) * 2007-04-02 2010-05-04 The Board Of Trustees Of The University Of Illinois Method for controlling operation of light emitting transistors and laser transistors
US11418257B2 (en) 2019-11-18 2022-08-16 Avicenatech Corp. High speed and multi-contact LEDs for data communication
CN111933707B (zh) * 2020-07-13 2021-08-03 华中科技大学 一种低噪声放大器

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0665217B2 (ja) * 1982-02-19 1994-08-22 日本電気株式会社 トランジスタ
US4503447A (en) * 1982-07-16 1985-03-05 The United States Of America As Represented By The Secretary Of The Army Multi-dimensional quantum well device
JPS60219766A (ja) * 1984-04-17 1985-11-02 Fujitsu Ltd 半導体装置
JPS61210679A (ja) * 1985-03-15 1986-09-18 Sony Corp 半導体装置
JPS61229361A (ja) * 1985-04-04 1986-10-13 Nec Corp 負性抵抗バイポ−ラトランジスタ
JPH0666317B2 (ja) * 1985-08-16 1994-08-24 富士通株式会社 半導体装置
JPH0821708B2 (ja) * 1985-11-14 1996-03-04 株式会社豊田中央研究所 半導体素子
JPH0611056B2 (ja) * 1985-12-03 1994-02-09 富士通株式会社 高速半導体装置
US4849799A (en) * 1986-07-31 1989-07-18 American Telephone And Telegraph Company At&T Bell Laboratories Resonant tunneling transistor
FR2604299B1 (fr) * 1986-09-23 1992-02-07 Palmier Jean Francois Transistor bipolaire comportant un emetteur multicouche assurant le confinement des trous
US5031005A (en) * 1986-10-22 1991-07-09 Fujitsu Limited Semiconductor device
JPH06154665A (ja) * 1992-11-18 1994-06-03 Honda Motor Co Ltd 塗装装置及び塗料の供給方法

Also Published As

Publication number Publication date
EP0292568B1 (de) 1993-03-31
US5003366A (en) 1991-03-26
KR890700270A (ko) 1989-03-10
DE3785196T2 (de) 1993-07-15
JPS63140570A (ja) 1988-06-13
EP0292568A1 (de) 1988-11-30
KR910006246B1 (ko) 1991-08-17
EP0292568A4 (de) 1989-04-12
WO1988004474A1 (fr) 1988-06-16

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