DE3789891D1 - Halbleiterschaltung mit resonantem Tunnelungseffekt. - Google Patents

Halbleiterschaltung mit resonantem Tunnelungseffekt.

Info

Publication number
DE3789891D1
DE3789891D1 DE3789891T DE3789891T DE3789891D1 DE 3789891 D1 DE3789891 D1 DE 3789891D1 DE 3789891 T DE3789891 T DE 3789891T DE 3789891 T DE3789891 T DE 3789891T DE 3789891 D1 DE3789891 D1 DE 3789891D1
Authority
DE
Germany
Prior art keywords
semiconductor circuit
tunneling effect
resonant tunneling
resonant
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3789891T
Other languages
English (en)
Inventor
Toshiro Futatsugi
Naoki Yokoyama
Kenichi Imamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP24957286A external-priority patent/JPS63104471A/ja
Priority claimed from JP61276953A external-priority patent/JPS63129678A/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3789891D1 publication Critical patent/DE3789891D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7376—Resonant tunnelling transistors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0895—Tunnel injectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Bipolar Transistors (AREA)
DE3789891T 1986-10-22 1987-10-21 Halbleiterschaltung mit resonantem Tunnelungseffekt. Expired - Lifetime DE3789891D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP24957286A JPS63104471A (ja) 1986-10-22 1986-10-22 半導体装置
JP61276953A JPS63129678A (ja) 1986-11-20 1986-11-20 半導体装置

Publications (1)

Publication Number Publication Date
DE3789891D1 true DE3789891D1 (de) 1994-06-30

Family

ID=26539369

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3789891T Expired - Lifetime DE3789891D1 (de) 1986-10-22 1987-10-21 Halbleiterschaltung mit resonantem Tunnelungseffekt.

Country Status (3)

Country Link
US (1) US5031005A (de)
EP (1) EP0268512B1 (de)
DE (1) DE3789891D1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4973858A (en) * 1986-07-18 1990-11-27 Ibm Corporation Resonant tunneling semiconductor devices
JPS63140570A (ja) * 1986-12-03 1988-06-13 Hitachi Ltd 半導体装置
US5206524A (en) * 1988-09-28 1993-04-27 At&T Bell Laboratories Heterostructure bipolar transistor
NL9200500A (nl) * 1991-04-17 1992-11-16 Imec Inter Uni Micro Electr Halfgeleider-inrichting, licht uitzendende diode en transistoropbouw, gebruikmakend van resonante tunneling.
JPH05304290A (ja) * 1992-04-28 1993-11-16 Nec Corp オーミック電極
US5326985A (en) * 1992-09-28 1994-07-05 Motorola, Inc. Bipolar doped semiconductor structure and method for making
US6229153B1 (en) * 1996-06-21 2001-05-08 Wisconsin Alumni Research Corporation High peak current density resonant tunneling diode
GB2341974A (en) * 1998-09-22 2000-03-29 Secr Defence Semiconductor device incorporating a superlattice structure
JP2001077352A (ja) * 1999-09-07 2001-03-23 Sony Corp 半導体素子およびその製造方法
US7099362B2 (en) * 2003-11-14 2006-08-29 Finisar Corporation Modulation doped tunnel junction

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1237824A (en) * 1984-04-17 1988-06-07 Takashi Mimura Resonant tunneling semiconductor device
JPS6158268A (ja) * 1984-08-30 1986-03-25 Fujitsu Ltd 高速半導体装置
JPS62128562A (ja) * 1985-11-29 1987-06-10 Fujitsu Ltd 半導体装置
JPH0611056B2 (ja) * 1985-12-03 1994-02-09 富士通株式会社 高速半導体装置
US4780749A (en) * 1986-07-01 1988-10-25 Hughes Aircraft Company Double barrier tunnel diode having modified injection layer

Also Published As

Publication number Publication date
EP0268512A2 (de) 1988-05-25
EP0268512A3 (en) 1989-10-25
EP0268512B1 (de) 1994-05-25
US5031005A (en) 1991-07-09

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Legal Events

Date Code Title Description
8332 No legal effect for de